High-Temperature RF Probe Station for Device Characterization Through 500&amp;lt;tex&amp;gt;$^circ$&amp;lt;/tex&amp;gt;C and 50 GHz

Schwartz, Z.D.; Downey, Alan N.; Alterovitz, Samuel A.; Ponchak, George E.

doi:10.1109/tim.2004.838137

Cited by 36 publications

(22 citation statements)

References 7 publications

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“…The resulting data is compared and shown to be in good agreement. All measurements are made on a specially built RF probe station that permits the wafer chuck temperature to vary from room temperature (25˚ C) to 600˚ C [18]. The wafer chuck is set to the desired temperature and held constant for 10 minutes to allow the substrate to be at a uniform temperature.…”

Section: Experimental Techniquesmentioning

confidence: 99%

High Temperature Characteristics of Coplanar Waveguide on R-Plane Sapphire and Alumina

Ponchak

Jordan

Scardelletti

2009

IEEE Trans. Adv. Packag.

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Section: Experimental Techniquesmentioning

confidence: 99%

High Temperature Characteristics of Coplanar Waveguide on R-Plane Sapphire and Alumina

Ponchak

Jordan

Scardelletti

2009

IEEE Trans. Adv. Packag.

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“…In this case, some errors in the measurements should be assumed, since the VNA would be correcting the DUT measurement that is being performed, for instance, at , using the data of the calibration standards acquired at room temperature [5], [6]. The best approximation that can be found in the literature is the application of some incomplete correction, which can include, for example, the thermal effect in the cables [7].…”

Section: Measuring and Calibrating At Different Temperaturesmentioning

confidence: 99%

Automatic, Calibrated and Accurate Measurement of S-Parameters in Climatic Chamber

Belda¹,

Caballero

Garnica

et al. 2015

IEEE Microw. Wireless Compon. Lett.

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Abstract-When measuring RF or microwave devices under a temperature profile inside a climatic chamber, one of the main problems lies in the impossibility to have the network analyzer calibrated for all the temperatures measured along the profile. Typically, the calibration is performed just at room temperature, assuming that there is going to be an error in the rest of the measured temperatures. That error will be higher the further we are from room conditions. In this work, we present a systematic procedure for accurately measuring the S-parameters of a device at different temperatures. It applies a calibration algorithm using the S-parameters of the device under test (DUT) and of the calibration standards measured at the different temperatures of interest along the temperature profile.

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“…For all tests, a specially built, high temperature RF probe station is used [10]. The LCP substrate rests on a ceramic heater that is mounted on a piece of ceramic with a very low thermal conductivity.…”

Section: Measurement Proceduresmentioning

confidence: 99%

“…7 that resistors must be backed off at least 3 dBm from the burnout power for stable, reliable operation. P RF (dBm) 10 …”

Section: Rf Power Handling Capabilitymentioning

confidence: 99%

RF and DC power handling characterization of thin film resistors embedded on LCP

Ponchak

Jordan

Horst

et al. 2008

2008 58th Electronic Components and Technology Conference

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For the first time, the DC and RF power handling capability of NiCrAlSi thin film resistors on Liquid Crystal Polymer (LCP) is presented. It is shown that there is a maximum power that the resistors can handle without causing degradation of the resistors, and this value is significantly less than the power required for burn out of the resistors. EDAX shows that the resistors fail due to electromigration of Ni and Cr, and migration of C from the LCP. IntroductionLiquid Crystal Polymer (LCP) substrates are currently being used for packaging of microwave and millimeter wave circuits In many applications, large RF and DC power is required. For example, MEMS switches as reported in [4] require typical bias voltages of 50 V, and if the MEMS switch has extra stress, the bias voltage may be as high as 100 V. Ideally, no current is drawn when the capacitive switch is open or closed, but if a switch fails, a large DC current may flow through the bias resistors. Antenna arrays are typically used for radar, and high RF power is usually desired to increase sensitivity. If the antenna array incorporates MMIC power amplifiers, the DC power consumption of the amplifier can be very high. For example, a wide bandgap transistor based amplifier can draw between 4 and 24 W. Thus, the thin film embedded resistors on LCP should be characterized to determine their RF and DC power characteristics. To the best of our knowledge, thin film embedded resistors have not been characterized.In this paper, thin film resistors embedded in a coplanar waveguide (CPW) structure [5] are characterized. First, the measured DC and RF resistance as a function of resistor length is presented, followed by the variation in resistance as a function of DC and RF power. Finally, the maximum DC and RF power that may be placed across the resistors and the variation in DC resistance as a function of temperature are discussed.

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High-Temperature RF Probe Station for Device Characterization Through 500<tex>$^circ$</tex>C and 50 GHz

Cited by 36 publications

References 7 publications

High Temperature Characteristics of Coplanar Waveguide on R-Plane Sapphire and Alumina

High Temperature Characteristics of Coplanar Waveguide on R-Plane Sapphire and Alumina

Automatic, Calibrated and Accurate Measurement of S-Parameters in Climatic Chamber

RF and DC power handling characterization of thin film resistors embedded on LCP

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