High-Temperature Recovery of Tungsten after Neutron Irradiation

Keys, L.K.; Smith, James P.; Moteff, J.

doi:10.1103/physrev.176.851

Cited by 69 publications

(31 citation statements)

References 22 publications

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“…Our assumption of deuterium being trapped by vacancy clusters is supported by field ion microscopy studies (FIM) where no voids but interstitials, vacancies, and vacancy clusters were observed in W irradiated by neutrons [19], [20] and [21]. Additionally, FIM and isochronal resistivity measurements [22] and [23] The TDS spectra from all samples implanted with D at 320-350 K have two peaks: a low-temperature peak with a maximum at about 420-450 K and a middle-temperature peak with a maximum at about 640-670 K. These peaks were already observed, e.g., by…”

Section: Resultsmentioning

confidence: 65%

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Deuterium retention in self-damaged tungsten

Tyburska

Alimov

Огородникова

et al. 2009

Journal of Nuclear Materials

125

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Surface and sub-surface morphology and deuterium retention in polycrystalline tungsten, undamaged and pre-damaged with 5. The dependence of the D retention on the damage level and the implanted fluence was studied, and the results show saturation for 0.4 dpa independent of the deuterium implantation fluence. Additionally, it was observed that self-implantation introduces high temperature traps which can almost completely be removed by annealing at 1200 K.

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Section: Resultsmentioning

confidence: 65%

“…However, all neutron-produced traps in W should be recovered above 1350 K (after the Stage IV annealing) [22].…”

Section: Resultsmentioning

confidence: 99%

Deuterium retention in self-damaged tungsten

Tyburska

Alimov

Огородникова

et al. 2009

Journal of Nuclear Materials

125

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“…Numerous studies have also been undertaken with regard to the recovery of irradiation-induced defects post-irradiation. However, these have mostly centred around resistivity measurements [12][13][14][15][16][17][18][19], with some early field ion microscopy work [20,21] and a single early TEM study on single crystal tungsten [22]. A similar TEM work has also been done in molybdenum [23].…”

Section: Previous Recovery Studiesmentioning

confidence: 96%

“…Stage IV recovery, at 0:22T m , is still subject to debate [14], being generally attributed to vacancy-impurity complexes [33], or di-vacancies [17]. Recent DFT simulations have shown that di-vacancies are not favoured in tungsten [34].…”

Section: Previous Recovery Studiesmentioning

confidence: 99%

High temperature annealing of ion irradiated tungsten

et al. 2015

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Transmission electron microscopy of high temperature annealing of pure tungsten irradiated by self-ions was conducted to elucidate microstructural and defect evolution in temperature ranges relevant to fusion reactor applications (500-1200°C). Bulk isochronal and isothermal annealing of ion irradiated pure tungsten (2 MeV W + ions, 500°C, 10 14 W + /cm 2 ) with temperatures of 800, 950, 1100 and 1400°C, from 0.5 to 8 h, was followed by ex situ characterisation of defect size, number density, Burgers vector and nature. Loops with diameters larger than 2-3 nm were considered for detailed analysis, among which all loops had b ¼ 1 2 h1 1 1i and were predominantly of interstitial nature. In situ annealing experiments from 300 up to 1200°C were also carried out, including dynamic temperature ramp-ups. These confirmed an acceleration of loop loss above 900°C. At different temperatures within this range, dislocations exhibited behaviour such as initial isolated loop hopping followed by large-scale rearrangements into loop chains, coalescence and finally line-loop interactions and widespread absorption by free-surfaces at increasing temperatures. An activation energy for the annealing of dislocation length was derived, finding E a ¼ 1:34 AE 0:2 eV for the 700-1100°C range.

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“…Other smaller recovery regions are evident in some of the specimens, similar to tungsten. 46 The reproducibility of these smaller peaks is uncertain in NMPO studies and in the studies of o t h e r~;~' ,~~,~~ their importance should not be overlooked, however, since the defects responsible for these peaks apparently contribute to the thermal hardening in this recovery region. 48 In Figure 2.73 the resistivity recovered in stage 111 (ApIII) and stage IV (ApIV) is presented.…”

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confidence: 99%