2000
DOI: 10.1016/s0257-8972(00)00887-2
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High-temperature properties of nanocomposite TiBxNy and TiBxCy coatings

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Cited by 120 publications
(43 citation statements)
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“…This signifies that the defects caused by high ion energy bombardment in the presence of N vacancies, are more stable than at low energy bombardment, [57][58] opposite to Rogström et al 8 observations for the stoichiometric case Koller et al 59 have presented the idea that microstructure affects the phase separation of the thin film coatings. It was suggested that under-dense column boundaries caused by lowly biased coatings accelerates decomposition because they provide higher diffusion and reduce retarding forces against volume changes.…”
Section: B Thermal Stability Of Ti1-xalxnymentioning
confidence: 97%
“…This signifies that the defects caused by high ion energy bombardment in the presence of N vacancies, are more stable than at low energy bombardment, [57][58] opposite to Rogström et al 8 observations for the stoichiometric case Koller et al 59 have presented the idea that microstructure affects the phase separation of the thin film coatings. It was suggested that under-dense column boundaries caused by lowly biased coatings accelerates decomposition because they provide higher diffusion and reduce retarding forces against volume changes.…”
Section: B Thermal Stability Of Ti1-xalxnymentioning
confidence: 97%
“…Examples of such systems are nc-M n N/a-Si 3 N 4 {M = Ti, W, V, (Ti 1-x Al x )N/a-Si 3 N 4 [1,17,18] and other hard transition-metal nitrides}, TiN/TiB 2 [1,6,12,13], nc-TiN/BN [20] and others (see review [1]). In the case of the nc-TiN/a-Si 3 N 4 , nc-(Ti 1-x Al x )N/a-Si 3 N 4 , nc-TiN/a-Si 3 N 4 /a-TiSi 2 , and TiN/TiB 2 it was shown that the hardness, measured after the annealing at room temperature, remains unchanged up to the recrystalization temperature of 900-1100 °C.…”
Section: Generic Design Concept and Thermal Stability Of Superhard Namentioning
confidence: 99%
“…All the superhard nanocomposites are deposited by means of plasma induced processing, such as plasma-induced CVD [1,[9][10][11][17][18] and PVD including magnetron sputtering [6,12,13] and vacuum arc evaporation [14]. Alternatively, combined plasma PVD and CVD are used in which the metals (Ti, Al, ...) are evaporated either by means of vacuum arc [14,15] or by sputtering [16] and the nonmetals are introduced as gaseous reactants (e.g., SiH 4 , BCl 3 , B 3 N 3 H 6 ).…”
Section: Introductionmentioning
confidence: 99%
“…Titanium alloys can be produced by chemical vapor deposition (CVD) or physical vapor deposition (PVD) such as rf-dc sputtering [1315] and ash evaporation [16].…”
Section: Introductionmentioning
confidence: 99%