2019
DOI: 10.1111/jace.16435
|View full text |Cite
|
Sign up to set email alerts
|

High‐temperature multilayer actuators based on CuO added BiScO3–PbTiO3 piezoceramics and Ag electrodes

Abstract: High‐temperature multilayer actuators based on Cu doping 0.367BiScO3–0.633PbTiO3 ceramic slices and Ag electrodes were prepared by low‐temperature co‐firing technology. The 0.3 wt% CuO addition has effectively reduced the sintering temperature of the ceramic from ~1080 to 930°C, thus the multilayer actuator were sintered at 930°C which is lower than the Ag melting point, that is, 961°C. The 4.3 mm thick multilayer actuator is composed of a series of ~44‐μm‐thick ceramic slices and ~2‐μm‐thick Ag electrodes. As… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

0
13
0

Year Published

2020
2020
2024
2024

Publication Types

Select...
7

Relationship

2
5

Authors

Journals

citations
Cited by 22 publications
(14 citation statements)
references
References 31 publications
(111 reference statements)
0
13
0
Order By: Relevance
“…Further comparison with the densely sintered pure samples at 1050°C 20 reveals that the piezoelectric properties of the Cu 1+ -doped PZN-PZT samples sintered at 890°C still maintain a leading edge; this will benefit in the manufacturing of multilayer piezoelectric devices cofired with the low-cost all-silver internal electrodes. 32,33 We believe that there must be other mechanisms for improving the piezoelectric performance of Cu 1+ -modified samples. The grain size effect that generally affects piezoelectric performance was dismissed, 34 because the change in grain size of the PZN-PZT samples doped with different amounts of copper was small ( Figure 2F reveals the origin of high piezoelectricity, 4 in which P s is the spontaneous polarization, ε is the dielectric constant, and Q is the electrostrictive coefficient, a parameter generally insensitive to changes in the composition.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Further comparison with the densely sintered pure samples at 1050°C 20 reveals that the piezoelectric properties of the Cu 1+ -doped PZN-PZT samples sintered at 890°C still maintain a leading edge; this will benefit in the manufacturing of multilayer piezoelectric devices cofired with the low-cost all-silver internal electrodes. 32,33 We believe that there must be other mechanisms for improving the piezoelectric performance of Cu 1+ -modified samples. The grain size effect that generally affects piezoelectric performance was dismissed, 34 because the change in grain size of the PZN-PZT samples doped with different amounts of copper was small ( Figure 2F reveals the origin of high piezoelectricity, 4 in which P s is the spontaneous polarization, ε is the dielectric constant, and Q is the electrostrictive coefficient, a parameter generally insensitive to changes in the composition.…”
Section: Resultsmentioning
confidence: 99%
“…Under the same sintering temperature of 890°C, the x = 0.25 sample has d 33 of 402 pC/N; this is 63% larger than that of the x = 0.00 sample. Further comparison with the densely sintered pure samples at 1050°C 20 reveals that the piezoelectric properties of the Cu 1+ ‐doped PZN‐PZT samples sintered at 890°C still maintain a leading edge; this will benefit in the manufacturing of multilayer piezoelectric devices cofired with the low‐cost all‐silver internal electrodes 32,33 …”
Section: Resultsmentioning
confidence: 99%
“…It is believed that MA organic structure in the tetragonal MAPbI 3 crystals exhibits an order‐disorder phase transition which introduces a nonzero but small electric polarization, leading to the formation of polar nanodomains. [ 41–46 ] These local polarized regions would be very helpful for suppressing the carrier scattering. Similar scenarios were once proposed by Zhu et al., and it was believed that the screened Coulomb potential created by large polarons in the crystal can reduce the carrier scattering by charged defects and phonons.…”
Section: Resultsmentioning
confidence: 99%
“…At first, the BS–PT– x CTO ceramics show a high T C of ∼449 °C at x = 0, 441 °C at x = 0.005, 429 °C at x = 0.01, and 420 °C at x = 0.03, according to the relative permittivity (ε r ) and dielectric loss (tan δ) versus temperature curves (Figures S3 and S4). , Then, the high-temperature stability of d 33 was also evaluated after annealing these ceramics at 50–460 °C for 1 h and cooling down again to room temperature. As shown in Figure a, the room-temperature d 33 values of BS–PT– x CTO ceramics gradually decrease with the annealing temperature increasing from 20 °C to ∼400 °C, and then quickly decrease to zero at a temperature which is slightly lower than the T C .…”
Section: Resultsmentioning
confidence: 99%
“…The 0.364BiScO 3 –0.636PbTiO 3 – x CaTiO 3 (BS–PT– x CTO) with x = 0–0.03 ceramics were prepared by the traditional solid-state method. High-purity Bi 2 O 3 (99.9%, Aladdin, Shanghai), Sc 2 O 3 (99.9%, Alfa Aesar, Shanghai), PbO (99.99%, Alfa Aesar, Shanghai), TiO 2 (99.9%, Aladdin, Shanghai), and CaCO 3 (99.99% Aladdin, Shanghai) powders were weighed according to the BS–PT– x CTO chemical formula . These powders were ball-milled for 12 h, dried at 120 °C, calcined at 800 °C for 2 h, ball-milled twice, and dried again.…”
Section: Methodsmentioning
confidence: 99%