High-temperature modeling of AlGaN/GaN HEMTs

Vitanov, S.; Palankovski, V.; Maroldt, S.; Quay, R.

doi:10.1109/isdrs.2009.5378300

Cited by 97 publications

(15 citation statements)

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“…In the first stage of the study, the numerical models [2,22,23] were adapted to the specific features of the configuration and fabrication technology of actual device structures. It is well known that the parameters of the undoped AlGaN barrier layer located near the two-dimensional electron channel have a significant effect on the characteristics of a HEMT.…”

mentioning

confidence: 99%

The Influence of AlGaN Barrier-Layer Thickness on the GaN HEMT Parameters for Space Applications

Гудков

Шашурин

Vyuginov

et al. 2017

Proceedings of the Scientific-Practical Conference "Research and Development - 2016"

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mentioning

confidence: 99%

The Influence of AlGaN Barrier-Layer Thickness on the GaN HEMT Parameters for Space Applications

Гудков

Шашурин

Vyuginov

et al. 2017

Proceedings of the Scientific-Practical Conference "Research and Development - 2016"

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“…Moreover, to verify the temperature variation of V off , Figure 6 shows the measured and modeled V off at different channel temperatures. The measured V off is extracted from the transfer I-V curves of the GaN HEMT at different ambient temperatures, while the modeled V off is generated using (5). As the dissipation power is almost 0 when extracting V off , the channel temperature approximately equals to ambient temperature in this case.…”

Section: Resultsmentioning

confidence: 99%

“…The fundamental properties of GaN HEMTs that are affected by temperature mainly consist of the Schottky barrier height ϕ B , the band gap energy E g , the low-field mobility μ 0 , the maximal electron saturated velocity υ sat , and the heat conductivity k. One way to study the temperature effects on GaN HEMTs performance with regard to these properties is carried out involving solution of complicated numerical expressions. [5][6][7][8] However, these numerical simulations are very time consuming and difficult to incorporate in circuit simulators. In comparison, analytical model is preferred as it is length (L g ) in order to minimize the parasitic gate resistance.…”

Section: Introductionmentioning

confidence: 99%

Improved quasi‐physical zone division model with analytical electrothermal I_ds model for AlGaN/GaN heterojunction high electron mobility transistors

Yong-bo

Wang³

et al. 2019

Int J Numerical Modelling

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An accurate analytical electrothermal drain current (I ds ) model for AlGaN/GaN HEMTs is presented in this letter. The model is implemented into our recently proposed quasi-physical zone division (QPZD) model for demonstration purpose. Compared with the original QPZD model, its electrothermal characteristics are enhanced by involving more fundamental temperature dependent elements. In addition, these elements are derived analytically based on physical mechanisms instead of former pure empirical fitting method. Thus, the extracted parameter values are more close to intrinsic values. An in house 0.15-μm GaN HEMT is used for validation. Compared with the measured data at a wide ambient temperature range (245-390 K), this electrothermal model demonstrates good accuracy to predict the DC characteristics and RF performances of GaN HEMTs.relatively simple while still provides a reasonable prediction on the device performance under different operating conditions. This large-signal modeling approach is usually based on the current and charge sources obtained by integration. 9,10 C. Wang et al 11 presented a temperature dependent large signal model for GaN HEMTs, which includes thermal, trapping, and RF dispersion effects. However, the method proposed in the present paper was to modify the Chalmers model that was originally proposed by I. Angelov 12,13 and is basically an empirical model. Empirical models for GaN HEMTs 14-18 usually contain dozens of fitting parameters, thus hardly offer an opportunity to understand device operation from the physical point of view.Compared with empirical models, physics-based analytical models for GaN HEMTs have been widely caught the attention in recent years 19-25 because they originate from device operation principle and contain most of the device physical parameters and much less empirical ones. Previously, we proposed an analytical model named quasi-physical zone division (QPZD) model 26,27 for GaN HEMTs. Compared with other fully physics-based analytical models, the QPZD model shows some advantages, such as concise formulas with superior accuracy, fewer parameters, better convergence, etc. However, empirical fitting functions are introduced to the electron sheet density n s and the critical electric field E c , which lack of clear physical meanings. Besides, only a few of the temperature dependent elements, such as the pinch off voltage V off and the maximal electron saturated velocity υ sat are included in the model. These two factors may result in unreasonable parameter values. For example, the obtained variation of the low-field mobility μ 0 with temperature is unreasonably large in our previous QPZD model. 27 The aim of this work is to improve the electrothermal characteristics of the QPZD model to incorporate the temperature effects on device performance. The effects of temperature variation on the fundamental elements (ie, ϕ B , E g , μ 0 , υ sat , and k) and also on the deduced ones (ie V off , n s , the thermal resistance R th , the maximal drain current I max , E c ) are inc...

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“…It is obvious from the figure that the device is operated from V ds = 0 V to 15 V while keeping V gs = 0 V. A decline in I d after the onset of current saturation, as evident from Figure 4A is associated with the self-heating effect of the device. 15,34 Because of that, for V ds > V ds (sat) , I d continuously reduces its magnitude because a relative increase in channel temperature would increase scattering, causing a reduction in sat , which has a direct relationship with I d . Figure 4B,C shows modeled characteristics using Chattopadhyay 13 and Wang 14 models, respectively.…”

Section: Resultsmentioning

confidence: 99%

An improved temperature dependent analytical model to predict AlGaN/GaN high electron mobility transistors AC characteristics

Khan

Ahmed

Rehman

2019

Int J Numerical Modelling

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In this paper, an improved temperature dependent model has been presented to predict AC characteristics of submicron AlGaN/GaN high electron mobility transistors (HEMTs). The model evaluates effects of channel temperature on the device AC intrinsic parameters. It has been shown that the rise of channel temperature is almost linear in nature, and it depends upon both the ambient temperature as well as on the operating voltages of the device. By reassessing two dimensional electron gas (2‐DEG) carrier concentration, ns, high electron mobility transistor (HEMT)'s analytical I−V equations for both linear as well as saturation regions have been modified. The modeled DC characteristics showed a good degree of accuracy with the experimental data. By evaluating temperature and bias dependent charge accumulation in the depletion region of the device, an AC model for the device intrinsic parameters has been developed. S‐parameters of the device have been evaluated by using the modeled AC intrinsic parameters that showed a good agreement with the measured data. Thus, the developed technique could be a useful tool to predict AC parameters of submicron AlGaN/GaN HEMTs meant for harsh environments.

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High-temperature modeling of AlGaN/GaN HEMTs

Cited by 97 publications

References 4 publications

The Influence of AlGaN Barrier-Layer Thickness on the GaN HEMT Parameters for Space Applications

The Influence of AlGaN Barrier-Layer Thickness on the GaN HEMT Parameters for Space Applications

Improved quasi‐physical zone division model with analytical electrothermal I_ds model for AlGaN/GaN heterojunction high electron mobility transistors

An improved temperature dependent analytical model to predict AlGaN/GaN high electron mobility transistors AC characteristics

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High-temperature modeling of AlGaN/GaN HEMTs

Cited by 97 publications

References 4 publications

The Influence of AlGaN Barrier-Layer Thickness on the GaN HEMT Parameters for Space Applications

The Influence of AlGaN Barrier-Layer Thickness on the GaN HEMT Parameters for Space Applications

Improved quasi‐physical zone division model with analytical electrothermal Ids model for AlGaN/GaN heterojunction high electron mobility transistors

An improved temperature dependent analytical model to predict AlGaN/GaN high electron mobility transistors AC characteristics

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Improved quasi‐physical zone division model with analytical electrothermal I_ds model for AlGaN/GaN heterojunction high electron mobility transistors