High Temperature Interconnect and Die Attach Technology: Au–Sn SLID Bonding

Tollefsen, Torleif A.; Larsson, Andréas; Løvvik, Ole Martin; Aasmundtveit, Knut E.

doi:10.1109/tcpmt.2013.2253353

Cited by 49 publications

(20 citation statements)

References 32 publications

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“…Transient Liquid Phase Bonding (TLPB) realized by bonding of parent materials with pre-deposited low-melting metal layer, whereas Transient Liquid Phase Soldering (TLPS) involves usage of the printed standard soft solders as interlayer for intermetallic phase (IMP) formation [77], [86]- [89]. The diffusion solder have Ag/In [90], [91], Ag/Sn [92], Au/In [93], [94], Au/ Sn [95], [96], Cu/Sn [97], [98], and Ni/Sn [99]. Considered the cost and environment friendly, the Cu-Sn alloy solder has been a good candidate for high temperature applications.…”

Section: Au100mentioning

confidence: 99%

A Review of SiC Power Module Packaging: Layout, Material System and Integration

2017

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Abstract-Silicon-Carbide (SiC) devices with superior performance over traditional silicon power devices have become the prime candidates for future high-performance power electronics energy conversion. Traditional device packaging becomes a limiting factor in fully realizing the benefits offered by SiC power devices, and thus, improved and advanced packaging structures are required to bridge the gap between SiC devices and their applications. This paper provides a review of the state-of-art advanced module packaging technologies for SiC devices with the focuses on module layout, packaging material system, and module integration trend, and links these packaging advancements to their impacts on the SiC device performances. Through this review, the paper discusses main challenges and potential solutions for SiC modules, which is critical for future SiC applications.Index Terms-Packaging material system, power module integration, SiC advanced packaging.

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Section: Au100mentioning

confidence: 99%

A Review of SiC Power Module Packaging: Layout, Material System and Integration

2017

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“…The custom-made substrate holder is designed to efficiently transfer heat from the hot plate to the test sample. [22] An illustration of the set up for shear testing configuration is shown in Figure 2.…”

Section: B Die Shear Testingmentioning

confidence: 99%

High-Temperature Mechanical Integrity of Cu-Sn SLID Wafer-Level Bonds

Luu

Høivik

Wang

et al. 2015

Metall Mater Trans A

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Wafer-level Cu-Sn SLID (Solid-Liquid Interdiffusion)-bonded devices have been evaluated at high temperature. The bonding process was performed at 553 K (280°C) and the mechanical integrity of the bonded samples was investigated at elevated temperatures. The die shear strength of Cu-Sn systems shows a constant behavior (42 MPa) for shear tests performed from room temperature [RT-298 K (25°C)] to 573 K ( to 300°C). This confirms experimentally the high-temperature stability of Cu-Sn SLID bonding predicted from phase diagrams. The fractography of sheared samples indicates brittle-fracture mode for all samples shear tested from RT to 573 K (300°C). The two dominating failure modes are Adhesive fracture between the Ti-W adhesion layer and the Si, and interface fracture at the original bond interface. This indicates that the bonding material itself is stronger than the observed shear strength values, and since these interfaces can be improved with process optimization even stronger bonds can be achieved. The presented work offers fundamental evidence of the Cu-Sn SLID bonding process for operating microelectronics and MEMS at high temperature.

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“…As a result, new packaging materials and technologies are needed to meet the demands of power electronic modules in the near future. A good candidate for high‐temperature applications is eutectic Au–20Sn solder . The eutectic Au‐20Sn solder alloy (melting point 280 °C) has been applied for many years in a number of specific applications such as light‐emitting diode packaging and optoelectronic packaging.…”

Section: Introductionmentioning

confidence: 99%

Comparative study of Au–Sn and Sn–Ag–Cu as die‐attach materials for power electronics applications

Lee

Yoon

2016

Surface & Interface Analysis

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A comparative study of Sn–3.0Ag–0.5Cu (SAC305) and Au–20Sn solders as die‐attach materials for high‐temperature power electronic applications was performed. The solid‐state interfacial reactions of SAC305 and Au–20Sn solders with a Ni‐plated Si chip and a direct‐bonded‐copper substrate, as well as the growth of interfacial intermetallic compound layers and interfacial stability, were investigated and compared during aging at 150 and 200 °C for up to 2000 h. The SAC305 solder exhibited a higher interfacial intermetallic compound growth rate and a higher consumption rate of the Ni layer than the Au–20Sn solder. The Au–20Sn solder had a superior interfacial stability for high‐temperature power electronic applications. Copyright © 2016 John Wiley & Sons, Ltd.

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High Temperature Interconnect and Die Attach Technology: Au–Sn SLID Bonding

Cited by 49 publications

References 32 publications

A Review of SiC Power Module Packaging: Layout, Material System and Integration

A Review of SiC Power Module Packaging: Layout, Material System and Integration

High-Temperature Mechanical Integrity of Cu-Sn SLID Wafer-Level Bonds

Comparative study of Au–Sn and Sn–Ag–Cu as die‐attach materials for power electronics applications

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