High Temperature Hall sensors using AlGaN/GaN HEMT Structures

Shoji, K.; Takahashi, Hideki; Abderrahmane, Abdelkader; Shibasaki, Ichiro; Sandhu, Adarsh

doi:10.1088/1742-6596/352/1/012009

Cited by 34 publications

(17 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This is mainly due to the sudden increase of carrier density, leading to impact ionization phenomena. Similar characteristics have been reported for materials fabricated of III-V materials [7,8]. In order to avoid this problem, the use of wide band gap materials such as GaN and SiC could be implemented for high temperature operation [8,9].…”

Section: A Micro-hall Device Sensitivity: Bias and Temperature Studiessupporting

confidence: 62%

High performance quantum well micro-hall device for current sensing in inverters

White

Kunets

Hirono

et al. 2013

2013 4th IEEE International Symposium on Power Electronics for Distributed Generation Systems (PEDG)

View full text Add to dashboard Cite

An InGaAs quantum well remotely-doped heterostructure grown by MBE was fabricated as a micro-Hall device and applied as a remote current sensor. Detailed studies of device sensitivities, signal linearity, and noise were performed over broad temperature and frequency ranges. Good performance was demonstrated up to 500 K with magnetic sensitivities as high as 1400 V/A/T at 80 K and 1000 V/A/T at 390 K. Detection limits at 100 kHz of 3 nT and 50 nT were measured for 80 K and 390 K, respectively. These studies suggest the need to develop magnetometers based on wide-band gap semiconductors for temperatures above 500 K.

show abstract

Section: A Micro-hall Device Sensitivity: Bias and Temperature Studiessupporting

confidence: 62%

High performance quantum well micro-hall device for current sensing in inverters

White

Kunets

Hirono

et al. 2013

2013 4th IEEE International Symposium on Power Electronics for Distributed Generation Systems (PEDG)

View full text Add to dashboard Cite

show abstract

“…Wide bandgap of GaN shows potential for stable operation at high temperatures [1]- [4]. Furthermore, GaN and related materials are expected to have a high tolerance for high-energy particle irradiation because of their chemical stability.…”

Section: R Ecent Industrial Trends Indicate Increasing Demandmentioning

confidence: 99%

“…Prior to the proton irradiation we fabricated AlGaN/GaN four-terminal micro-Hall devices [4] with active regions ranging from 1 m 1 m to 5 m 5 m by conventional photolithography consisting of three main steps: 1) formation of the mesa and active "cross" patterns by reactive ion etching (RIE); 2) thermal and electron beam evaporation of Ti/Al/Ni/Au Ohmic contacts; and 3) rapid thermal annealing in a nitrogen atmosphere at 850 C for 90 s. The mesa depth etched by RIE was 300 nm. AlInSb/InAsSb/AlInSb Hall-bar structures with dimensions of 50 m 50 m were also fabricated by photolithography with AuGe ohmic electrodes.…”

Section: R Ecent Industrial Trends Indicate Increasing Demandmentioning

confidence: 99%

Robust Hall Effect Magnetic Field Sensors for Operation at High Temperatures and in Harsh Radiation Environments

et al. 2012

View full text Add to dashboard Cite

We describe the fabrication and magnetoelectric properties of robust, high sensitivity Hall effect sensors fabricated using AlGaN/GaN and AlInSb/InAsSb/AlInSb heterostructures with a two-dimensional electron gas at the heterointerface. The sensitivity of AlInSb/InAsSb/AlInSb heterostructure clearly degrades above C. The AlGaN/GaN 2DEG Hall sensors were stable up to at least 400 C and even after irradiation of 380 keV protons with a fluence of cm , where AlInSb/InAsSb/AlInSb heterostructure showed an increase in the sheet carrier density. The feasibility of applications of the AlGaN/GaN and AlInSb/InAsSb/AlInSb Hall sensor for harsh radiation environment is discussed.

show abstract

“…However, Hall sensors have a higher linear range compared with magnetoresistive sensors, can be integrated onto a single chip with electronics and unlike MR sensors, which can measure a maximum of 180° around a circle due to its periodic behaviour, Hall sensors can measure a full 360° around a circle. Recent research works show the progress made in developing Hall effect sensors for extreme environments [ 137 , 138 , 139 , 140 ] but Hall effect sensors need further research to build up on these preliminary investigations with the aim of commercialization and to increase its stability under severe mechanical effects.…”

Section: Discussion: Research Opportunities For Other Types Of Magmentioning

confidence: 99%

Downhole Applications of Magnetic Sensors

Gooneratne

Moellendick

2017

Sensors

View full text Add to dashboard Cite

In this paper we present a review of the application of two types of magnetic sensors—fluxgate magnetometers and nuclear magnetic resonance (NMR) sensors—in the oil/gas industry. These magnetic sensors play a critical role in drilling wells safely, accurately and efficiently into a target reservoir zone by providing directional data of the well and acquiring information about the surrounding geological formations. Research into magnetic sensors for oil/gas drilling has not been explored by researchers to the same extent as other applications, such as biomedical, magnetic storage and automotive/aerospace applications. Therefore, this paper aims to serve as an opportunity for researchers to truly understand how magnetic sensors can be used in a downhole environment and to provide fertile ground for research and development in this area. A look ahead, discussing other magnetic sensor technologies that can potentially be used in the oil/gas industry is presented, and what is still needed in order deploy them in the field is also addressed.

show abstract

High Temperature Hall sensors using AlGaN/GaN HEMT Structures

Cited by 34 publications

References 5 publications

High performance quantum well micro-hall device for current sensing in inverters

High performance quantum well micro-hall device for current sensing in inverters

Robust Hall Effect Magnetic Field Sensors for Operation at High Temperatures and in Harsh Radiation Environments

Downhole Applications of Magnetic Sensors

Contact Info

Product

Resources

About