High-temperature effects on a CoSi2/poly-Si metal oxide semiconductor gate configuration

Degradation mechanisms of CoSi2/polycrystalline Si (polycide) films have been investigated. CoSi2 was formed on various silicon substrates (stacked or one-layer structures composed of polycrystalline Si 800–10 800 Å and amorphous Si 800–3000 Å). The thermal stability of these silicide films were examined using four-point probe measurement. It was found that the microstructure of the underlying silicon substrate, rather than the grain size of the CoSi2 or the silicide/polycrystalline Si interface, has the greatest influence on the thermal stability of the polycide films. The CoSi2 formed on as-deposited amorphous Si provides the maximum thermal stability. Those films are stable at 1000 °C up to 120 s, even for undoped polycide films.

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High-temperature effects on a CoSi2/poly-Si metal oxide semiconductor gate configuration

Abstract: Articles you may be interested inEffect of hightemperature anneal on interface states generation in stressed metaloxidesemiconductor devices

Cited by 11 publications

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Formation and stability of silicides on polycrystalline silicon

Formation and stability of silicides on polycrystalline silicon

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