HIGH-TEMPERATURE DISCRETE DEVICES IN 6<font>H</font>-<font>SiC</font>: SUBLIMATION EPITAXIAL GROWTH, DEVICE TECHNOLOGY AND ELECTRICAL PERFORMANCE

Anikin, M. M.; Иванов, П. А.; Лебедев, А. А.; Pytko, S. N.; Strel'chuk, Anatoly M.; Syrkin, A. L.

doi:10.1142/9789814261722_0012

Cited by 9 publications

(10 citation statements)

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“…For lower temperatures, the activation energy is in range from 65 to 102 meV and is close to the literature values for nitrogen donor levels [11,13,14]. For higher temperatures, the energy is range from 67 meV to 398 meV and is close to the literature values for boron acceptor levels [13][14][15][16][17][18]. As described before, boron (0.5%) is one of the SiC sintering modifiers.…”

Section: (A) and (B) For Lnσ Error Propagation Is 7⋅10supporting

confidence: 85%

“…A few donor levels were determined by Ikeda [13] and Tajim [14]: 93 meV from Raman spectrum investigations, 100 meV from luminescence spectrum observations [12] and 80-100 meV from Hall constant measurements and infrared absorption [17]. Boron is the most common p type dopant for SiC [11][12][13][14][15][16][17][18][19]. The activation energy of acceptor levels for SiC with boron doping varies from 300 meV to 400 meV [18].…”

Section: Introductionmentioning

confidence: 99%

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Electric properties of monophase polycrystalline sinters SiC, B4C, TiC and their composites as non-inductive volume resistors

et al. 2011

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Monophase polycrystalline SiC, B 4 C, TiC and their SiC-TiC, SiC-B 4 C composite sinters with a theoretical density of 97% are characterized by good mechanical and thermal durability as well as a wide range of electrical conductivity values. SiC, which has semiconductor conductivity and negative TCR, was combined with TiC, which has metallic conductivity and positive TCR. Produced in this way resistive elements, within a temperature range from 293 K to 348 K, exhibit a TCR close to zero, and an impedance independent of frequency within a range from 100 Hz to 1 MHz. The combination SiC with 40 wt% of B 4 C has been produced resistive elements, which are resistive to oxidation. This combination has also completly resistive character, within a range of 100 Hz to 1 MHz. Most of the investigated materials are suitable for high temperature, noninductive volume resistors.

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Section: (A) and (B) For Lnσ Error Propagation Is 7⋅10supporting

confidence: 85%

Section: Introductionmentioning

confidence: 99%

Electric properties of monophase polycrystalline sinters SiC, B4C, TiC and their composites as non-inductive volume resistors

et al. 2011

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“…This method allowed for the vapor equilibrium to be constant over the substrate. The "sublimation sandwich method" made it possible to grow high quality SiC layers in the temperature range 1600 -2100°C (Vodakov, et al 1979;Tairov, et al 1976;Anikin, et al 1992). An excellent review on SiC sublimation epitaxy was written by Konstantinov (1996).…”

Section: Sublimation Epitaxymentioning

confidence: 99%

High-Temperature Electronics in Europe

Dmitriev¹,

Chow²,

DenBaars³

et al. 2000

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Support is provided by a variety of U.S. government agencies, including ONR, DoC, and NSF.ITRI's mission is two-pronged: (1) to inform U.S. policymakers, strategic planners, and managers of the state of selected technologies in foreign countries in comparison to the United States; and (2) to identify opportunities for international cooperation among countries and collaboration among researchers. ITRI assessments cover basic research, advanced development, and applications. Panels of typically six technical experts conduct these assessments. Panelists are leading authorities in their fields, technically active, and knowledgeable about U.S. and foreign research programs. As part of the assessment process, panels visit and carry out extensive discussions with foreign scientists and engineers in their labs.The ITRI staff at Loyola College helps select topics, recruits expert panelists, arranges study visits to foreign laboratories, organizes workshop presentations, and finally, edits and disseminates the final reports. HIGH-TEMPERATURE ELECTRONICS IN EUROPE August 2000Vladimir Dmitriev (Chair) T. Paul Chow Steven P. DenBaars Michael S. Shur Michael G. Spencer George White This document was sponsored by the Office of Naval Research (ONR) and the National Science Foundation (NSF) under ONR Grant NOOO14-99-1-0529 and NSF Cooperative Agreement ENG-9707092, both awarded to the International Technology Research Institute at Loyola College in Maryland. The government has certain rights in this material. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of the United States government, the authors' parent institutions, or Loyola College. ABSTRACTThis final report of ITRI's panel on high-temperature electronics in Europe consists of an executive summary, an introductory chapter, and six chapters by panel members on various aspects of wide bandgap electronics. The report also contains site reports for the various companies, labs, universities, and government offices that the panel visited in Europe. Comparisons are made between developments in Europe and the United States. Principal findings include: • European scientists and engineers see optoelectronics and high-power, high-frequency electronics as the major application opportunities for wide bandgap semiconductors.• The size of the GaN and SiC technology and device development effort in Europe is comparable with that in the United Statews.• Europe is ahead of the U.S. in in bulk GaN growth technology.• The United States is currently ahead in GaN-based device developments for light emitters, and high-power/high-frequency applications.• In silicon carbide technology, the U.S. is ahead in SiC bulk crystal and epitaxial production.• In R&D silicon carbide effort, European organization both academic and industrial have recently demonstrated outstanding results in both material growth (bulk and epi) and device development proving the leading position in the world; in the area ...

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“…The majority carrier defects observed here are dopant defect related complexes related to AI doping and B impurities. (8,9) The two lower energy levels are boron related and are referred to as the D center. These complexes were also observed in the as-grown material due to the formation of dopant complexes with intrinsic defects.…”

Section: F 060mentioning

confidence: 99%

Silicon carbide alphavoltaic battery

Rybicki

Vargas–Aburto

Uribe

1996

Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996

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The development of new wide bandgap, highly radiation resistant semiconductors, such as Sic, may make it possible to use an inexpensive alpha particle emitting isotope to construct high efficiency, long lifetime radioisotope power sources. To study the possibility of producing an alphavoltaic battery, Sic photodetector diodes were irradiated with 5.5 MeV alpha particles from the radioisotope Am-241. Further studies of the radiation resistance of Sic were made using 1 MeV electrons in an accelerator facility. During the irradiation, the power output of the Sic cell was monitored and its degradation measured. Although the initial power output was considerable, a rapid decay of the power output occurred.Basic studies of the radiation resistance of Sic were also made! using deep level transient spectroscopy (DLTS). Six deep levels were found in both the unirradiated and irradiated Sic diodes. The carrier removal rate of 2.46 per 1 MeV electron measured here in Sic is very similar to the value of 2.85 per 1 MeV electron measured in InP, another highly radiation resistant semiconductor. The rapid degradation in output and considerable carrier removal rates observed here suggest that SIC has a radiation resistance similar to but not better than other radiation resistant semiconductors such as InP. The considerable initial output of the SIC battery was however, very encouraging, and further developments in SIC technology may make it possible to reduce the radiation damage rate in this application. In t ro d u c: t i o nThe maturation of new wide bandgap, highly radiation resistant semiconductors has made it worthwhile to revisit the topic of radioisotope batteries. SIC has a desirable combination of properties for radioisotope battery design, with a bandgap of 3 eV in the 6H polytype and a radiation induced atomic displacement threshold second only to diamond.(l) These attributes may make it possible to use an inexpensive alpha particle emitting isotope to construct higher efficiency, longer lifetime radioisotope batteries. These batteries are power sources for applications where neither solar nor chemical battery power are feasible.To simulate the operation of an alphavoltaic battery, Sic photodetector diodes were irradiated with 5.5 MeV alpha particles from the radioisotope Am-241. This isotope is inexpensive and widely available enough to be used in household smoke detectors, and has a long half life of 458 years. The operation of the SIC alphavoltaic battery is analogous to a solar cell with the exception of high energy particles impinging on the cell rather than light. Previous radioisotope battery designs were based on beta emitting isotopes such as Pm-147 and silicon diodes. (2) However, their performance was limited by the difficulty in absorbing all the energy of the high energy electron from the beta decay, the leakage current in the low bandgap Si diodes, the short lifetime of the isotope chosen and the radiation damage rate of the diodes. (3) Highly radiation resistant Sic semiconductor materials and...

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HIGH-TEMPERATURE DISCRETE DEVICES IN 6H-SiC: SUBLIMATION EPITAXIAL GROWTH, DEVICE TECHNOLOGY AND ELECTRICAL PERFORMANCE

Cited by 9 publications

References 0 publications

Electric properties of monophase polycrystalline sinters SiC, B4C, TiC and their composites as non-inductive volume resistors

Electric properties of monophase polycrystalline sinters SiC, B4C, TiC and their composites as non-inductive volume resistors

High-Temperature Electronics in Europe

Silicon carbide alphavoltaic battery

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