High-temperature continuous-wave operation of directly grown InAs/GaAs quantum dot lasers on on-axis Si (001)

Kwoen, Jinkwan; Jang, Byung Koog; Watanabe, Katsuyuki; Arakawa, Yasuhiko

doi:10.1364/oe.27.002681

Cited by 49 publications

(35 citation statements)

References 29 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…On the other hand, laser diodes in the InP technology for emission near 1.5 µm have also been reported by an all-MOVPE approach, but they relied either on very thick (∼ 13 µm) buffer layers [20] or on patterned Si substrates [21,22], both of which are marginally compatible with industry standards. Finally, it has been recently demonstrated that by further optimizing the III-V-on-Si MBE growth, high-performance InAs/GaAs QDLs grown in a single all-MBE run on planar, on-axis Si could be achieved [23,24].…”

mentioning

confidence: 99%

Mid-infrared laser diodes epitaxially grown on on-axis (001) silicon

Calvo¹,

Bartolome²,

Bahriz³

et al. 2020

Optica

View full text Add to dashboard Cite

The direct epitaxial growth of III-V semiconductor lasers on standard, CMOS-compatible, on-axis (001) Si substrates is actively sought for the realization of active photonic integrated circuits. Here we report on the first mid-infrared semiconductor laser epitaxially grown on on-axis Si substrates, i.e., compatible with industry standards. Furthermore, these GaSb-based laser diodes demonstrate low threshold current density, low optical losses, high temperature operation, and high characteristic temperatures. These results represent a breakthrough toward the integration of semiconductor laser sources on Si for smart sensors.

show abstract

mentioning

confidence: 99%

Mid-infrared laser diodes epitaxially grown on on-axis (001) silicon

Calvo¹,

Bartolome²,

Bahriz³

et al. 2020

Optica

View full text Add to dashboard Cite

show abstract

“…Incorporating multiple defect filter layers, combined with in-situ thermal annealing during growth, has shown to dramatically reduce the threshold current of III-V lasers on Si and, with relevance for the work presented later, to cause an increase in the lasing wavelength [7]. Devices have recently been demonstrated with performance which is competitive to those grown on native substrates [2], [8]- [10] and extended to InAs dots on InP on Si and lasers emitting in the 1.55 µm wavelength range [11].…”

mentioning

confidence: 99%

Degradation of III–V Quantum Dot Lasers Grown Directly on Silicon Substrates

Shutts

Allford

Spinnler

et al. 2019

IEEE J. Select. Topics Quantum Electron.

View full text Add to dashboard Cite

Initial age-related degradation mechanisms for InAs quantum dot lasers grown on silicon substrates emitting at 1.3 µm are investigated. The rate of degradation is observed to increase for devices operated at higher carrier densities and is therefore dependent on gain requirement or cavity length. While carrier localization in quantum dots minimizes degradation, an increase in the number of defects in the early stages of aging can increase the internal optical-loss that can initiate rapid degradation of laser performance due to the rise in threshold carrier density. Population of the two-dimensional states is considered the major factor for determining the rate of degradation, which can be significant for lasers requiring high threshold carrier densities. This is demonstrated by operating lasers of different cavity lengths with a constant current and measuring the change in threshold current at regular intervals. A segmented-contact device, which can be used to measure the modal absorption and also operate as a laser, is used to determine how the internal optical-loss changes in the early stages of degradation. Structures grown on silicon show an increase in internal optical loss, whereas the same structure grown on GaAs shows no signs of increase in internal optical loss when operated under the same conditions.

show abstract

“…While most III/V-on-Si buffers were grown using MBE, in this work, we achieved a high crystalline quality GaAs buffer by MOCVD with a TDD of 3×10 7 cm -2 . This value is over 3 times smaller than that of the recent TDD for MBE grown GaAs buffer on (001) Si [29] and closes the gap relative to the TDD of the state-of-art lasers on Si with intermediate GaP buffers [19]. Furthermore, the InAs/GaAs QD lasers were grown on quasi-nominal (001) Si without any Ge/GaP buffers or substrate patterning.…”

mentioning

confidence: 54%

“…This is very beneficial to alleviate microthermal cracks from thermal expansion mismatch between III-V and Si, though only optically pumped devices have been demonstrated so far [28]. Kwoen et al [16,29] reported all molecular beam epitaxy (MBE) grown high-quality InAs/GaAs QD lasers on on-axis Si (001) substrates without using patterning and intermediate layers of foreign material. Though buffer-layer threading dislocation density (TDD) value is approximately eight times higher than that for the QD lasers on on-axis GaP/Si [19], high-temperature (over 100°C) cw operation was achieved with threshold current density as low as 370 A/cm 2 and a maximum net modal gain centered around 1225 nm [29].…”

mentioning

confidence: 99%

Low Threshold Quantum Dot Lasers Directly Grown on Unpatterned Quasi-Nominal (001) Si

Wan

Bowers

Shang

et al. 2020

IEEE J. Select. Topics Quantum Electron.

View full text Add to dashboard Cite

We report electrically pumped, continuous-wave (cw) InAs/GaAs quantum dot (QD) lasers directly grown on quasinominal Si (001) substrates with offcut angle as small as 0.4°. No GaP, Ge buffer layers or substrate patterning is required. An antiphase boundary free epitaxial GaAs film was grown by metalorganic chemical vapor deposition (MOCVD) with a low threading dislocation density of 3×10 7 cm-2. Room-temperature cw lasing at ~1.3 µm has been achieved, with a minimum threshold current density of 34.6 A/cm 2 per layer, a maximum operating temperature of 80 °C, and a maximum single facet output power of 52 mW. A comparison of various monolithic III-V heteroepitaxy on Si solutions is presented. Direct growth on unpatterned quasi-nominal (001) Si may yield the best material quality at the lowest lifecycle cost. Index Terms-Integrated optoelectronics, quantum dots, wafer scale integration I. INTRODUCTION ptical interconnects are superior to electronic interconnects through their high bandwidth capability, immunity to electromagnetic interference, and minimum attenuation and dispersion at 1.3 and 1.55 μm wavelengths. This technology replaced electrical wires several decades ago in long-haul telecommunications and is now taking shape, with a similar trend, at increasingly short lengths in datacom and highperformance computing (HPC) [1]. As cost is a fundamental design criterion, the development of optoelectronic integration with complementary metal-oxide-semiconductor (CMOS) electronics would obviously boost the adoption of photonics for post-Moore performance scaling of electronic systems [2]. A complete suite of photonic devices is needed, with passive optical components on the silicon-on-insulator (SOI) platform, high-speed modulators based on silicon PN junctions, highspeed photo detectors (PDs) based on epitaxially grown germanium films [3, 4], and integrated lasers. While the realization of a laser based entirely on a Si-like nonpolar group Manuscript received on February 20, 2019.

show abstract

High-temperature continuous-wave operation of directly grown InAs/GaAs quantum dot lasers on on-axis Si (001)

Cited by 49 publications

References 29 publications

Mid-infrared laser diodes epitaxially grown on on-axis (001) silicon

Mid-infrared laser diodes epitaxially grown on on-axis (001) silicon

Degradation of III–V Quantum Dot Lasers Grown Directly on Silicon Substrates

Low Threshold Quantum Dot Lasers Directly Grown on Unpatterned Quasi-Nominal (001) Si

Contact Info

Product

Resources

About