Mid-infrared laser diodes epitaxially grown on on-axis (001) silicon

Calvo, Marta Rio; Bartolome, Laura Monge; Bahriz, M.; Boissier, G.; Cerutti, L.; Rodriguez, Jean-Baptiste; Tournié, E.

doi:10.1364/optica.388383

Cited by 44 publications

(40 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The threshold-current densities are around 650-700 A.cm −2 , identical for all cavity length. This value is significantly lower than that measured (900-1000 A.cm −2 ) with similar LDs grown in an all-MBE process on offcut Si substrates [14] and approaches the value (400-500 A.cm −2 ) obtained on all-MBE on-axis LDs [8].…”

Section: Threshold Current Densitycontrasting

confidence: 54%

“…Prior to being loaded into the MBE reactor, the 50-mm GaSb-on-Si MOVPE template was thoroughly cleaned with organic solvents before being treated with an oxygen plasma to remove any residual resist contamination. The template was then handled in the same way as a regular, epi-ready GaSb substrate [13] and the laser structure was similar to previous ones grown on Si [8,14,15] for the sake of comparison. The wafer was heated up to around 560°C under Sb 2 flux for oxide removal.…”

Section: Mbe Of the Laser Heterostructurementioning

confidence: 99%

“…The total thickness of the GaSb layer (MOVPE + MBE layers) underneath the laser structure was thus 1 µm. Next, we grew a laser structure similar to the one previously described [8]. First, a 500-nm thick, n-type, InAs 0.92 Sb 0.08 layer was grown at 450°C.…”

Section: Mbe Of the Laser Heterostructurementioning

confidence: 99%

“…Only recently were high-performance GaSb mid-IR LDs epitaxially integrated on on-axis (001)Si demonstrated [8]. These LDs were grown by molecular-beam epitaxy (MBE), the only technique to date able to grow high-performance GaSb-based light sources [2,3].…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Etched-cavity GaSb laser diodes on a MOVPE GaSb-on-Si template

Monge-Bartolomé¹,

Cerba²,

Díaz-Thomas³

et al. 2020

Opt. Express

Self Cite

View full text Add to dashboard Cite

We report on 2.3-µm etched-cavity GaSb-based laser diodes (LDs) epitaxially integrated on on-axis (001)Si and benchmarked against their cleaved facet counterparts. The LDs were grown in two steps. First, a GaSb-on-Si template was grown by metal-organic vapor phase epitaxy (MOVPE) before the growth of the LD heterostructure by molecular-beam epitaxy. Different etched-facet geometries operate in continuous wave well above room temperature, and their performance are similar to those of cleaved-cavity LDs. These results show that etching mirrors is a viable route to form laser cavities in the GaSb technology and that MOVPE GaSb-on-Si templates are a suitable platform for optoelectronic devices overgrowth.

show abstract

Section: Threshold Current Densitycontrasting

confidence: 54%

Section: Mbe Of the Laser Heterostructurementioning

confidence: 99%

Section: Mbe Of the Laser Heterostructurementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Etched-cavity GaSb laser diodes on a MOVPE GaSb-on-Si template

Monge-Bartolomé¹,

Cerba²,

Díaz-Thomas³

et al. 2020

Opt. Express

Self Cite

View full text Add to dashboard Cite

show abstract

“…However, its best advantage lies in the feasibility of integration in complex CMOS electronics [ 14 , 15 ]. Recent progress in laser sources integration on silicon [ 16 ] makes it possible to consider fully integrated compact sensors. For these reasons, silicon-based micro-resonator seems to be the best choice for the future development of very compact gas sensors integrated on the same chip with electronics, a laser, and a mechanical resonator.…”

Section: Introductionmentioning

confidence: 99%

Analytic Optimization of Cantilevers for Photoacoustic Gas Sensor with Capacitive Transduction

Trzpil

Maurin

Rousseau

et al. 2021

Sensors

View full text Add to dashboard Cite

We propose a new concept of photoacoustic gas sensing based on capacitive transduction which allows full integration while conserving the required characteristics of the sensor. For the sensor’s performance optimization, trial and error method is not feasible due to economic and time constrains. Therefore, we focus on a theoretical optimization of the sensor reinforced by computational methods implemented in a Python programming environment. We present an analytic model to optimize the geometry of a cantilever used as a capacitive transducer in photoacoustic spectroscopy. We describe all the physical parameters which have to be considered for this optimization (photoacoustic force, damping, mechanical susceptibility, capacitive transduction, etc.). These parameters are characterized by opposite trends. They are studied and compared to obtain geometric values for which the signal output and signal-to-noise ratio are maximized.

show abstract

III–V Optoelectronic Devices Grown on Silicon

Tang

Sun

Zhan

et al. 2021

Digital Encyclopedia of Applied Physics

View full text Add to dashboard Cite

Silicon‐based optoelectronic devices, including silicon‐based lasers and silicon‐based photodetectors (PDs), are essential parts for silicon‐based optoelectronic integration. With the advancement of material epitaxy technologies such as metal–organic chemical vapor phase epitaxy (MOCVD) and molecular beam epitaxy (MBE), it has become possible to integrate III–V semiconductor optoelectronic devices, especially by monolithic growth, with low‐cost and large‐sized silicon substrates. However, the differences in material properties such as lattice constant, polarity, and thermal expansion coefficient between III–V materials and silicon lead to tremendous challenges in monolithic growth. In recent years, the unique three‐dimensional quantum confinement and defect insensitivity characteristics of quantum dots have greatly improved the performance of optoelectronic devices. This article reviews recent research progress in monolithic growth and optoelectronic devices of III–V semiconductor materials on silicon substrates, emphasizing the development of silicon‐based quantum dot optoelectronic devices.

show abstract

Mid-infrared laser diodes epitaxially grown on on-axis (001) silicon

Cited by 44 publications

References 28 publications

Etched-cavity GaSb laser diodes on a MOVPE GaSb-on-Si template

Etched-cavity GaSb laser diodes on a MOVPE GaSb-on-Si template

Analytic Optimization of Cantilevers for Photoacoustic Gas Sensor with Capacitive Transduction

III–V Optoelectronic Devices Grown on Silicon

Contact Info

Product

Resources

About