High-temperature continuous-wave 3–6.1 μm “W” lasers with diamond-pressure-bond heat sinking

Abstract

Optically pumped type-II W lasers emitting in the mid-infrared exhibited continuous-wave (cw) operating temperatures of 290 K at λ=3.0 μm and 210 K at λ=6.1 μm. Maximum cw output powers for 78 K were 260 mW at λ=3.1 μm and nearly 50 mW at λ=5.4 μm. These high maximum temperatures were achieved through the use of a diamond-pressure-bonding technique for heat sinking the semiconductor lasers. The thermal bond, which is accomplished through pressure alone, permits topside optical pumping through the diamond at wavelengths that would be absorbed by the substrate.

The Growth of InAsSb/InAs/InPSb/InAs Mid-Infrared Emitters by Metal-Organic Chemical Vapor Deposition

“…barriers. This higher characteristic temperature is similar to those observed in the current state of the art InAs/GaInSb/AIAsSb type II optically pumped lasers [4]. Estimated peak powers of about 300-10 mW/facet and thresholds of 6-170 kW/cm2 are similar to hose observed for the previously reported InAsSb/InAsP SLS lasers [2].…”

“…In compressively strained InAsSb SLSS, it is necessary to maximize the light-heavy (13/2,&l/2> -13/2,+3/2>) hole splitting to suppress non-radiative Auger recombination. Recently, Bewley et al have repo~ed record high output powers and operating temperatures for mid-infrared InAs/GaInSb/AIAsSb type II optically pumped lasers using a diamond-pressure-bond heat sinking technique [4]. We are currently exploring the growth of new emitter structures as well as the use of novel materials in these structures to improve our laser perforgxmce.…”

Resonantly pumped optical pumping injection cavity lasers

“…1 While electrical injection 2,3 ultimately will be ideal, the optically pumped devices have thus far produced much higher powers than their diode counterparts. [4][5][6][7][8] To ensure the efficient injection of carriers, these optically pumped lasers have employed two main approaches to maximize the absorption of pump photons in the active region. In the integrated absorber (IA) method first introduced for the type-II antimonides by the Massachusetts Institute of Technology Lincoln Laboratory [9][10][11] and further developed at the Air Force Research Laboratory, [6][7][8] thick GaInAsSb layers that absorb at pump = 1800 nm surround each active type-II "W" period.…”

Correlating growth conditions with photoluminescence and lasing properties of mid-IR antimonide type II “W” structures

“…Optically pumped ''W'' structures have displayed higher pulsed 3 and continuous wave ͑cw͒ 4 operating temperatures than any other interband III-V lasers emitting beyond 3 m. Electrically pumped lasers have operated in pulsed mode at room temperature 5 and cw up to 200 K. 6 Despite these results, there have been few systematic attempts to optimize the growth conditions for ''W'' lasers, 7,8 or to correlate the various growth parameters with optical performance. 9 With this in mind, we have undertaken a systematic investigation of the effect of QW growth temperature, T active , varied from 435 to 526°C, on the photoluminescence ͑PL͒ for a series of InAs/GaInSb/InAs/AlAsSb structures.…”