High-temperature conductivity of undoped and Copper-doped cadmium selenide

Varvas, J.; Nirk, T.

doi:10.1002/pssa.2210330106

Cited by 12 publications

(7 citation statements)

References 8 publications

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“…Then E ( + ) and a(-) acquire halfinteger values for copper containing defects. Table 2 shows the expressions of type ( 5 ) for the ENC parts, considering (13) and (14). Values of a(-) are given within the liiriits I n order to finally establish the suitability of (17), it is imperative to take into account that the change of yn = 0.5 -+ yn = 0, i.e.…”

Section: Discussionmentioning

confidence: 99%

High-temperature point defects in CdS:Cu

Kukk

Aarna

Voogne

1981

Phys. Stat. Sol. (a)

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High-temperature conductivity and copper solubility in CdS single crystals are measured as a function of temperature (350 to 1050 "C) and cadmium vapour pressure (10-12 to loo atm). A method of finding dominant defects is proposed, based on the experimental dependence of electron concentration and impurity solubility on cadmium vapour pressure. It is ascertained that copper dissolves in CdS in the form of electrically neutral complexes. Electrically charged defects occur as associates, consisting of substitutional and interstitial copper atoms. Quasi-chemical reactione (QCR) for forming these defects are proposed and their thermodynamic parameters are determined. HpOBeneHbl B MOHOKPMCTaJIJlaX CdS B 3aBHCMMOCTH OT TeMnepaTypbI (350 HO 1050 " c ) He@eHTOB, MCXOZIH 113 3KCIIepHMeHTaJILHbIX RaHHbIX 3aBHCHMOCTM KOHUeHTpaUMH ~~0 6 0~-HblX 3JIeKTPOHOB M PaCTBOpMMOCTH IlpHMeCH OT HaBJIeHHR IlapOB ICanMMR. YCTaHOBJIeHO, 9 T O MeHb PaCTBOpReTcH B CdS B OCHOUHOM B BMne 3JleKTpOHt?$~TpaJIbHbIX KOMnJIeKCOB. 3JIeKTpMTeCIEH 3apHWeHHbIe Ae@eKTbI RBJIFIIOTCH TaKlfFe aCCOUHaTaMH, COCTORIL[MWH M3 M3MepeHMH BblCOKOTeMnepaTypHOfi IIpOBOAMni OCTH H paCTBOPHMOCTH MenM M HaBJIeIIMtf napoB ICanMm ( no loo a m ) . IIpennomeH MeTon HaxomneIIm AOMHHM~YIOIUHX nienn a a~e w e~~~ M MexyaenbHbIx aToMoB nienti. IIpe~nomeabr K B~~H X H M H~I~C H H~ peawHM (KXP) 06pa30BaHHR BTMX ne@emos H onpenenem1 M X TepMonmaMasecmie IIapaMeTpbI.

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Section: Discussionmentioning

confidence: 99%

High-temperature point defects in CdS:Cu

Kukk

Aarna

Voogne

1981

Phys. Stat. Sol. (a)

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“…Most numerous are investigations of pure CdSe in cadmium vapour [l to 41 or selenium vapour [3, 51, but in practice more important are doped semiconducting materials, such as copper-doped CdSe. According to Callister et al [S] and Varvas and Nirk [3] copper acts in cadmium vapour at, high temperatures in CdSe as a donor.…”

Section: Introductionmentioning

confidence: 99%

“…Nirk has found that copper is distributed between interstitial sites Cut and associates (CUivCd)' [3]. Recent studies of defect structure [4, 51 indicate that the electron concentration is smaller than the concentration of copper in CdSe, especially in Cd vapour, and therefore the appearance of neutral defects involving copper is possible.…”

Section: Introductionmentioning

confidence: 99%

Defect Structure of Cu-Doped Cadmium Selenide

Öpik¹,

Varvas²

1982

phys. stat. sol. (a)

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High‐temperature conductivity and copper solubility in CdSe is measured over the range 600 to 900°C as a function of temperature and cadmium and selenium vapour pressure. It is found that in cadmium vapour (pCd > 10−1 atm) below 750°C the main part of copper is in electrically inactive form and with increasing temperature transfers to the electrically active interstitial form Cu i˙ The activation energy of transference is found to be (2.0 ± 0.28) eV. In cadmium vapour the incorporation of copper occurs by the mechanism of controlled electronic imperfections with the electroneutrality condition (ENC) n = Cui and in selenium vapour by the mechanism of controlled atomic imperfections with ENC Cu i˙ = (Cu i˙VCd)′.

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“…2b can be compared with the value ∆E = 1.5 eV of isobar of undoped CdSe [14]. Earlier [16] we investigated the dependence of HTEC isotherm of ZnSe:In under p Zn as σ ~ Zn p γ , where γ ≈ 0.5.…”

Section: Resultsmentioning

confidence: 99%

“…An exception is CdTe:In with precisely performed high temperature investigations and HTDE models [8][9][10][11]. HTDE of undoped ZnSe [12,13] and CdSe [14] are different. In the present work the results of HTEC measurements are performed in ZnSe:In and in CdSe:In under selenium vapour pressure ( 2 Se p ) and at large crystal temperature range with the aim to find common features and differences in HTDE models.…”

Section: Introductionmentioning

confidence: 96%

High temperature electrical conductivity in ZnSe:In and in CdSe:In under selenium vapor pressure

Lott

Shinkarenko

Volobujeva

et al. 2007

Physica Status Solidi (b)

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High temperature electrical conductivity (HTEC) isotherms and isobars of ZnSe : In and of CdSe : In are compared. There are differencies in In-doping mechanisms of II -VI compounds. When HTEC isotherms and isobars of ZnSe : In and of CdSe : In, measured under metal component vapour pressure give both n-type conductivity then differences appear in the results of measurements under the selenium vapor pressure (

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High-temperature conductivity of undoped and Copper-doped cadmium selenide

Cited by 12 publications

References 8 publications

High-temperature point defects in CdS:Cu

High-temperature point defects in CdS:Cu

Defect Structure of Cu-Doped Cadmium Selenide

High temperature electrical conductivity in ZnSe:In and in CdSe:In under selenium vapor pressure

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