High temperature chemical vapor deposition of SiC

Kordina, Olof; Hallin, Christer; Ellison, A.; Bakin, A.; Ivanov, Ivan Gueorguiev; Henry, Anne; Yakimova, Rositsa; Touminen, M.; Vehanen, A.; Janzén, Erik

doi:10.1063/1.117613

Cited by 116 publications

(59 citation statements)

References 6 publications

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“…In the system containing 1 mol SiO 2 , 2 mol C, and 1 mol argon (Figure 7(a)), reduction of SiO 2 starts at 1373 K (1100°C); carbothermal reduction of SiO 2 proceeds until 1773 K (1500°C) at which all carbon is used up. Further increasing temperature results in the reduction of SiO 2 by SiC with evolution of SiO vapor by Reaction [10]. SiO 2 is fully reacted when the temperature is increased to 2223 K (1950°C).…”

Section: Discussionmentioning

confidence: 99%

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Carbothermal Reduction of Quartz in Methane–Hydrogen–Argon Gas Mixture

Zhang

Tang

et al. 2015

Metall Mater Trans B

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Synthesis of silicon carbide (SiC) by carbothermal reduction of quartz in a CH4-H2-Ar gas mixture was investigated in a laboratory fixed-bed reactor in the temperature range of 1573 K to 1823 K (1300 °C to 1550°C). The reduction process was monitored by an infrared gas analyser, and the reduction products were characterized by LECO, XRD, and SEM. A mixture of quartz-graphite powders with C/SiO2 molar ratio of 2 was pressed into pellets and used for reduction experiments. The reduction was completed within 2 hours under the conditions of temperature at or above 1773 K (1500 °C), methane content of 0.5 to 2 vol pct, and hydrogen content ≥70 vol pct. Methane partially substituted carbon as a reductant in the SiC synthesis and enhanced the reduction kinetics significantly. An increase in the methane content above 2 vol pct caused excessive carbon deposition which had a detrimental effect on the reaction rate. Hydrogen content in the gas mixture above 70 vol pct effectively suppressed the cracking of methane. Carbothermal Reduction of Quartz in MethaneHydrogen-Argon Gas Mixture XIANG LI, GUANGQING ZHANG, KAI TANG, OLEG OSTROVSKI, and RAGNAR TRONSTAD Synthesis of silicon carbide (SiC) by carbothermal reduction of quartz in a CH 4 -H 2 -Ar gas mixture was investigated in a laboratory fixed-bed reactor in the temperature range of 1573 K to 1823 K (1300°C to 1550°C). The reduction process was monitored by an infrared gas analyser, and the reduction products were characterized by LECO, XRD, and SEM. A mixture of quartz-graphite powders with C/SiO 2 molar ratio of 2 was pressed into pellets and used for reduction experiments. The reduction was completed within 2 hours under the conditions of temperature at or above 1773 K (1500°C), methane content of 0.5 to 2 vol pct, and hydrogen content ‡70 vol pct. Methane partially substituted carbon as a reductant in the SiC synthesis and enhanced the reduction kinetics significantly. An increase in the methane content above 2 vol pct caused excessive carbon deposition which had a detrimental effect on the reaction rate. Hydrogen content in the gas mixture above 70 vol pct effectively suppressed the cracking of methane.

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Section: Discussionmentioning

confidence: 99%

“…[8,9] However, this method is expensive because of the cost of elemental silicon. SiC can also be produced by gaseous pyrolysis of silane (SiH 4 ) [10,11] or methylchlorosilane (CH 3 SiCl 3 ) [12] in a carbon-containing atmosphere (chemical vapor deposition technique). This process is not only expensive, but also very corrosive.…”

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confidence: 99%

Carbothermal Reduction of Quartz in Methane–Hydrogen–Argon Gas Mixture

Zhang

Tang

et al. 2015

Metall Mater Trans B

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“…The stagnant flow HTCVD, where growth is carried out at temperatures in the range of 2000 -2300°C, proved to give much higher growth rates, up to hundreds of mm h − 1 [7,16], which motivates further investigation of the potential of this technique for SiC boule growth. The use of high process temperatures, together with high precursor concentration, sets a few challenges in the design of a stable open system, namely in respect to the thermal and flow stability, the gas-phase chemistry and its interaction with the crucible walls.…”

Section: Stagnant Flow Htcvd Reactor: From Epitaxial To Crystal Growthmentioning

confidence: 99%

High temperature CVD growth of SiC

Ellison

Zhang

Peterson

et al. 1999

Materials Science and Engineering: B

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“…Cree Research Inc., which was founded in 1987, first commercialized the single crystalline SiC wafer grown by improved PVT process, which is suitable for the semiconductor industry [10]. In the late 1990s, wafers with higher purity produced by the hightemperature chemical vapor deposition (HTCVD) method are available on the market [11,12]. Nowadays, high-quality SiC wafers with diameter size up to 150 mm could be purchased [13].…”

Section: Part I: Introduction 1 Silicon Carbidementioning

confidence: 99%

CVD solutions for new directions in SiC and GaN epitaxy

Li¹

2015

Linköping Studies in Science and Technology. Dissertations

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This thesis aims to develop a chemical vapor deposition (CVD) process for the new directions in both silicon carbon (SiC) and gallium nitride (GaN) epitaxial growth. The properties of the grown epitaxial layers are investigated in detail in order to have a deep understanding. SiC is a promising wide band gap semiconductor material which could be utilized for fabricating high-power and high-frequency devices. 3C-SiC is the only polytype with a cubic structure and has superior physical properties over other common SiC polytypes, such as high hole/electron mobility and low interface trap density with oxide. Due to lack of commercial native substrates, 3C-SiC is mainly grown on the cheap silicon (Si) substrates. However, there’s a large mismatch in both lattice constants and thermal expansion coefficients leading to a high density of defects in the epitaxial layers. In paper 1, the new CVD solution for growing high quality double-position-boundaries free 3C-SiC using on-axis 4H-SiC substrates is presented. Reproducible growth parameters, including temperature, C/Si ratio, ramp-up condition, Si/H2 ratio, N2 addition and pressure, are covered in this study. GaN is another attractive wide band gap semiconductor for power devices and optoelectronic applications. In the GaN-based transistors, carbon is often exploited to dope the buffer layer to be semi-insulating in order to isolate the device active region from the substrate. The conventional way is to use the carbon atoms on the gallium precursor and control the incorporation by tuning the process parameters, e.g. temperature, pressure. However, there’s a risk of obtaining bad morphology and thickness uniformity if the CVD process is not operated in an optimal condition. In addition, carbon source from the graphite insulation and improper coated graphite susceptor may also contribute to the doping in a CVD reactor, which is very difficult to be controlled in a reproducible way. Therefore, in paper 2, intentional carbon doping of (0001) GaN using six hydrocarbon precursors, i.e. methane (CH4), ethylene (C2H4), acetylene (C2H2), propane (C3H8), iso-butane (i-C4H10) and trimethylamine (N(CH3)3), have been explored. In paper 3, propane is chosen for carbon doping when growing the high electron mobility transistor (HEMT) structure on a quarter of 3-inch 4H-SiC wafer. The quality of epitaxial layer and fabricated devices is evaluated. In paper 4, the behaviour of carbon doping using carbon atoms from the gallium precursor, trimethylgallium (Ga(CH3)3), is explained by thermochemical and quantum chemical modelling and compared with the experimental results. GaN is commonly grown on foreign substrates, such as sapphire (Al2O3), Si and SiC, resulting in high stress and high threading dislocation densities. Hence, bulk GaN substrates are preferred for epitaxy. In paper 5, the morphological, structural and luminescence properties of GaN epitaxial layers grown on N-face free-standing GaN substrates are studied since the N-face GaN has advantageous characteristics compared to the Ga...

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High temperature chemical vapor deposition of SiC

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Cited by 116 publications

References 6 publications

Carbothermal Reduction of Quartz in Methane–Hydrogen–Argon Gas Mixture

Carbothermal Reduction of Quartz in Methane–Hydrogen–Argon Gas Mixture

High temperature CVD growth of SiC

CVD solutions for new directions in SiC and GaN epitaxy

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