High-temperature charge and thermal transport properties of the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-type thermoelectric material PbSe

Androulakis, J.; Chung, Duck Young; Su, Xianli; Zhang, Li; Uher, Ctirad; Hasapis, Thomas C.; Hatzikraniotis, Euripides; Paraskevopoulos, K. M.; Kanatzidis, Mercouri G.

doi:10.1103/physrevb.84.155207

Cited by 60 publications

(53 citation statements)

References 39 publications

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“…Fig. 5B shows the Hall mobility (μ H ) of n-and p-type samples at 300 K as well as data reported by Smirnov (34), Allgaier (35), and Androulakis (29). The p-type samples are selected such that the carrier density is relatively low and thus the influence from the heavy band at this temperature is negligible.…”

Section: Shanghai Institute Of Ceramics-chinese Academy Of Sciences mentioning

confidence: 99%

“…Earlier results on Cl doped PbSe appear to follow this valence principle (22), while more recent results on Cl doped PbSe show far fewer carriers than expected. The fewer than expected carriers may indicate the presence of other bulk or surface defects that lead to the reduced mobility of these samples (29).…”

Section: Shanghai Institute Of Ceramics-chinese Academy Of Sciences mentioning

confidence: 99%

“…Since the original submission of this manuscript there have been reports on transport properties in n-type PbSe doped with group III elements (45) and chlorine (29), as well as nanostructured (46) PbSe 1-x S x . Our discussion here involves complementary phenomena that should have some applicability to these results.…”

Section: Shanghai Institute Of Ceramics-chinese Academy Of Sciences mentioning

confidence: 99%

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Weak electron–phonon coupling contributing to high thermoelectric performance in n-type PbSe

Wang

Pei

LaLonde

et al. 2012

Proc. Natl. Acad. Sci. U.S.A.

390

365

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PbSe is a surprisingly good thermoelectric material due, in part, to its low thermal conductivity that had been overestimated in earlier measurements. The thermoelectric figure of merit, zT, can exceed 1 at high temperatures in both p-type and n-type PbSe, similar to that found in PbTe. While the p-type lead chalcogenides (PbSe and PbTe) benefit from the high valley degeneracy (12 or more at high temperature) of the valence band, the n-type versions are limited to a valley degeneracy of 4 in the conduction band. Yet the n-type lead chalcogenides achieve a zT nearly as high as the p-type lead chalcogenides. This effect can be attributed to the weaker electron-phonon coupling (lower deformation potential coefficient) in the conduction band as compared with that in the valence band, which leads to higher mobility of electrons compared to that of holes. This study of PbSe illustrates the importance of the deformation potential coefficient of the charge-carrying band as one of several key parameters to consider for band structure engineering and the search for high performance thermoelectric materials.energy | semiconductor | quality factor W aste heat recovery using thermoelectric power generation is attracting considerable interest from the automobile industry (1) as well as from many other areas (2). Large-scale production of bulk materials with high figure of merit, zT, defined as zT ¼ S 2 σT∕ðκ e þ κ L Þ (S is the Seebeck coefficient, σ is the electric conductivity, and κ e and κ L are the electronic and lattice thermal conductivity, respectively), is the key to widespread adaption of thermoelectric technology. The search for good thermoelectric materials has focused on investigating semiconductors that have suitable band structures and low thermal conductivities (3, 4). As one of the first investigated material systems (5), PbTe and its alloys have been extensively studied and remain some of the best (6, 7) thermoelectric materials for applications from 500 to 900 K. Considerable effort has been made to achieve a higher zT in these alloys by reducing the lattice thermal conductivity, κ L , by incorporation of nanometer scale inclusions (8-11). Other strategies approach the challenge of increasing zT from different angles, such as band structure distortion by Tl doping (12), and more recently, increasing band degeneracy by converging two different valence bands in p-type PbTe (13).It can be shown that the material parameter called the thermoelectric quality factor, B,determines the optimized figure of merit (14-16) (N V is the band degeneracy, m Ã b is the density of states effective mass of a single band, μ 0 is the mobility at nondegenerate limit, and κ L is the lattice thermal conductivity). This expression is derived for semiconductors with single band transport behavior where the carrier concentration can be optimized to achieve maximum zT. For good thermoelectric semiconductors the dominant scattering mechanism at high temperatures, where zT peaks, is typically due to acoustic phonons. The deformation pote...

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Section: Shanghai Institute Of Ceramics-chinese Academy Of Sciences mentioning

confidence: 99%

Section: Shanghai Institute Of Ceramics-chinese Academy Of Sciences mentioning

confidence: 99%

Section: Shanghai Institute Of Ceramics-chinese Academy Of Sciences mentioning

confidence: 99%

See 1 more Smart Citation

Weak electron–phonon coupling contributing to high thermoelectric performance in n-type PbSe

Wang

Pei

LaLonde

et al. 2012

Proc. Natl. Acad. Sci. U.S.A.

390

365

View full text Add to dashboard Cite

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“…At higher temperatures, all the lead chalcogenides show T À2.5 behavior for acoustic scattering due m ÃðÀ2Þ temperature dependence in the relation l / m ÃðÀ2Þ T À1 for degenerate semiconductors. 24 The mobility values at all temperatures in this study are lower than those observed in n-type PbSe, 7,9,26 PbTe 10 first, because In does not completely dope in PbTe 1-y Se y as compared to other n-type dopants like halogens (Br, I) or p-type dopants like Na, K etc., and second, due to alloy scattering. With increase in temperature, decrease in mobility is observed in all samples.…”

Section: B Transport Propertiesmentioning

confidence: 56%

“…Since this model does not explicitly consider different scattering mechanisms, it shows only 1/T decrease, but may not agree accurately if any specific scattering mechanism dominates. Second, in PbTe 1-y Se y solid solutions, with increase of Se content, j l first decreases, comes to a minimum at $y ¼ 0.5, and then rises again 26,36 due to highest disorder at mid compositions. Here, electron-phonon interaction can be neglected due to low values of j e while scattering by acoustic and also by optical polar phonons are considered.…”

Section: B Transport Propertiesmentioning

confidence: 96%

Thermoelectric properties of indium doped PbTe1-ySey alloys

Bali

Wang

Snyder

et al. 2014

Journal of Applied Physics

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High-output-power densities from molecular beam epitaxy grown n-and p-type PbTeSe-based thermoelectrics via improved contact metallization J. Appl. Phys. 111, 104501 (2012) Lead telluride and its alloys are well known for their thermoelectric applications. Here, a systematic study of PbTe 1-y Se y alloys doped with indium has been done. The powder X-Ray diffraction combined with Rietveld analysis confirmed the polycrystalline single phase nature of the samples, while microstructural analysis with scanning electron microscope results showed densification of samples and presence of micrometer sized particles. The temperature dependent transport properties showed that in these alloys, indium neither pinned the Fermi level as it does in PbTe, nor acted as a resonant dopant as in SnTe. At high temperatures, bipolar effect was observed which restricted the zT to 0.66 at 800 K for the sample with 30% Se content. V C 2014 AIP Publishing LLC.

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Thermoelectric Materials

Owens‐Baird

Heinrich

Kovnir

2017

Encyclopedia of Inorganic and Bioinorganic Chemistry

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The field of thermoelectric materials has flourished over the last two decades. Significant successes achieved in the development of materials notwithstanding, novel and highly efficient materials are in steep demand due to a wide range of potential and current applications, ranging from wearable electronics to space missions. The main challenge in the improvement of the thermoelectric figure of merit ( zT ) is to optimize the intertwined intrinsic charge and thermal transport properties. High electrical conductivity and thermopower, along with low thermal conductivity, need to be achieved simultaneously to excel the thermoelectric efficiency. In this review, the thermoelectric concepts, basics of transport properties, and strategies for zT optimization are discussed in the first section. In the following sections, the predominate structure types associated with high‐performance bulk thermoelectric materials are discussed in detail: Bi 2 Te 3 , PbTe, TAGS/LAST systems, SnSe, Cu 2− x Se, chalcopyrites, tetrahedrites, clathrates, skutterudites, zinc antimonides, Yb 14 MnSb 11 , Heusler and half‐Heusler intermetallics. The basic crystal structures, the possibilities for doping and substitutions to adjust charge carrier concentration and thermal conductivity, baseline thermoelectric properties, and strategies for efficiency improvement are considered for each structure type. Examples of recent work highlighting these strategies are briefly presented.

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High-temperature charge and thermal transport properties of then-type thermoelectric material PbSe

Cited by 60 publications

References 39 publications

Weak electron–phonon coupling contributing to high thermoelectric performance in n-type PbSe

Weak electron–phonon coupling contributing to high thermoelectric performance in n-type PbSe

Thermoelectric properties of indium doped PbTe1-ySey alloys

Thermoelectric Materials

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