High-temperature characterization and comparison of 1.2 kV SiC power MOSFETs

DiMarino, Christina; Chen, Zheng; Danilović, Milisav; Boroyevich, Dushan; Burgos, Rolando; Mattavelli, Paolo

doi:10.1109/ecce.2013.6647125

Cited by 64 publications

(29 citation statements)

References 9 publications

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“…ΨB is the potential difference between the Fermi level and the intrinsic Fermi level, εSiC is the dielectric constant of silicon carbide, NA the doping density, q the electron charge and Eg(0) the band-gap energy at T=0 K. According to the datasheets and previously presented measurements [29,30] the threshold voltage is higher for Si MOSFETs however, both SiC and Si MOSFETs have a similar dVTH/dT. The effective mobility (µ) also reduces with temperature as a result of increased phonon scattering reducing the relaxation time between carrier-tolattice scattering events.…”

Section: Analytical Modelling Of the Gate And Drain Current Tempementioning

confidence: 99%

“…5 show. Measurements from literature and datasheets show that for SiC MOSFETs, the turn-ON dIDS/dt increases with temperature [21,29,31], while for silicon MOSFETs devices [32], the turn-ON dIDS/dt is either temperature invariant or decreases with temperature. The reason for this is due to dβ/dT, which is very low in SiC MOSFETs but is negative in silicon MOSFETs.…”

Section: A Impact Of Device Technology On Dids/dt As a Tsepmentioning

confidence: 99%

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An Investigation of Temperature-Sensitive Electrical Parameters for SiC Power MOSFETs

Gonzalez

Alatise

et al. 2017

IEEE Trans. Power Electron.

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Section: Analytical Modelling Of the Gate And Drain Current Tempementioning

confidence: 99%

Section: A Impact Of Device Technology On Dids/dt As a Tsepmentioning

confidence: 99%

An Investigation of Temperature-Sensitive Electrical Parameters for SiC Power MOSFETs

Gonzalez

Alatise

et al. 2017

IEEE Trans. Power Electron.

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“…The switching characteristics of SiC MOSFETs were investigated in [7,8], but the impact of temperature was not considered. The relationship between dV DS /dt and temperature for SiC MOSFET can be observed in some published reports [9][10][11][12][13][14]. In [9] and [14], the characterization and comparison of three types of 1.2 kV SiC MOSFETs produced by different manufacturers is presented at 25 • C and 175 • C. Similar measurements have also been performed in [10,11].…”

Section: Introductionmentioning

confidence: 73%

“…The relationship between dV DS /dt and temperature for SiC MOSFET can be observed in some published reports [9][10][11][12][13][14]. In [9] and [14], the characterization and comparison of three types of 1.2 kV SiC MOSFETs produced by different manufacturers is presented at 25 • C and 175 • C. Similar measurements have also been performed in [10,11]. In [12], a SiC Implantation and Epitaxial MOSFET (SiC-IEMOSFET) has been evaluated at the temperatures of 25 • C and 125 • C. In reference [13], a behavioral model of SiC MOSFET in Pspice over a wide temperature range is provided.…”

Section: Introductionmentioning

confidence: 88%

Analysis of Voltage Variation in Silicon Carbide MOSFETs during Turn-On and Turn-Off

Liao

et al. 2017

Energies

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Due to our limited knowledge about silicon carbide metal-oxide-semiconductor field-effect transistors (SiC MOSFETs), the theoretical analysis and change regularity in terms of the effects of temperature on their switching characteristics have not been fully characterized and understood. An analysis of variation in voltage (dV DS /dt) for SiC MOSFET during turn-on and turn-off has been performed theoretically and experimentally in this paper. Turn-off variation in voltage is not a strong function of temperature, whereas the turn-on variation in voltage has a monotonic relationship with temperature. The temperature dependence is a result of the competing effects between the positive temperature coefficient of the intrinsic carrier concentration and the negative temperature coefficient of the effective mobility of the electrons in SiC MOSFETs. The relationship between variation in voltage and supply voltage, load current, and gate resistance are also discussed. A temperature-based analytical model of dV DS /dt for SiC MOSFETs was derived in terms of internal parasitic capacitances during the charging and discharging processes at the voltage fall period during turn-on, and the rise period during turn-off. The calculation results were close to the experimental measurements. These results provide a potential junction temperature estimation approach for SiC MOSFETs. In SiC MOSFET-based practical applications, if the turn on dV DS /dt is sensed, the device temperature can be estimated from the relationship curve of turn on dV DS /dt versus temperature drawn in advance.

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“…Switching test results of SiC MOSFETs in converter circuits have shown that their switching losses can significantly limit the operating frequency [9,10]. Soft switching techniques can be employed to minimise the switching losses and a soft-switched SiC boost converter (12.5 kW, 112 kHz) was reported in [11] with an efficiency of around 98 %.…”

Section: Introductionmentioning

confidence: 99%

Analysis of SiC MOSFETs under hard and soft-switching

Ahmed

Todd

Forsyth

2015

2015 IEEE Energy Conversion Congress and Exposition (ECCE)

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Abstract-Analytical models for hard-switching and softswitching SiC MOSFETs and their experimental validation are described in this paper. The models include the high frequency parasitic components in the circuit and enable very fast, accurate simulation of the switching behaviour of SiC MOSFET using only datasheet parameters. The much higher switching speed of SiC devices over Si counterparts necessitates a clear detailed analysis. Each switching transient was divided into four distinct sub-periods and their respective equivalent circuits were solved to approximate the circuit state variables. Nonlinearities in the junction capacitances of SiC devices were considered in the model. Analytical modelling results were close to the LTspice simulation results with a threefold reduction in the simulation time. The effect of snubber capacitors on the soft-switching waveforms is also explained analytically and validated experimentally, which enables the analytical model to be used to evaluate future softswitching solutions. It was found that the snubber branch can significantly reduce the turn off ringing of the SiC MOSFET in addition to the reduction of switching losses.

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High-temperature characterization and comparison of 1.2 kV SiC power MOSFETs

Cited by 64 publications

References 9 publications

An Investigation of Temperature-Sensitive Electrical Parameters for SiC Power MOSFETs

An Investigation of Temperature-Sensitive Electrical Parameters for SiC Power MOSFETs

Analysis of Voltage Variation in Silicon Carbide MOSFETs during Turn-On and Turn-Off

Analysis of SiC MOSFETs under hard and soft-switching

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