1999
DOI: 10.1016/s0966-9795(98)00121-6
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High-temperature atomic defect properties and diffusion processes in intermetallic compounds

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Cited by 67 publications
(42 citation statements)
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“…The experimental data for thermal vacancy formation, determined by time-differential length change measurements only experimental value of 0.68 eV for the effective enthalpy of formation of thermal vacancies in stoichiometric B2-for Ni 0.47 Al 0.53 [32] and indicated in Figure 7, agree fairly well with the model predictions. The value for the effective NiAl, determined from differential, thermal-expansion measurements, [27] is in excellent agreement with the data calcuenthalpy of formation of thermal vacancies calculated from the present model at x Al ϭ 0.53 (1.98 eV) is close to the lated from the present model (0.66 eV, Table V).…”
Section: Resultssupporting
confidence: 73%
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“…The experimental data for thermal vacancy formation, determined by time-differential length change measurements only experimental value of 0.68 eV for the effective enthalpy of formation of thermal vacancies in stoichiometric B2-for Ni 0.47 Al 0.53 [32] and indicated in Figure 7, agree fairly well with the model predictions. The value for the effective NiAl, determined from differential, thermal-expansion measurements, [27] is in excellent agreement with the data calcuenthalpy of formation of thermal vacancies calculated from the present model at x Al ϭ 0.53 (1.98 eV) is close to the lated from the present model (0.66 eV, Table V).…”
Section: Resultssupporting
confidence: 73%
“…vacancies for the pure, binary phases B2-NiAl and B2-CoAl agree well with the values reported in literature. [27,[30][31][32][33][34] The…”
Section: Resultsmentioning
confidence: 99%
“…Secondly, previous positron lifetime studies on single-crystalline D0 3 -Fe 3 Si have shown that stoichiometric as well as nonstoichiometric compositions are free of structural vacancies 18 and that nonequilibrium vacancies, which for example are introduced by electron irradiation, anneal out even at ambient temperature. 21 The absence of a lifetime component smaller than the free lifetime f ͑Table I͒ indicates saturation trapping of positrons, which is reasonable because the mean positron diffusion length in metal crystals (L ϩ Ϸ100 nm) is much larger than the grain size and the positrons therefore arrive at the interfacial traps with high probability.…”
Section: Resultsmentioning
confidence: 97%
“…100 nm diameter͒ and in coarse-grained material ͑Table II͒. Since self-diffusion in Fe 3 Si is mediated by vacancies, 21 we may therefore assume that the tracer diffusion characteristics for monocrystalline Fe 3 Si also pertain to Fe 3 Si nanocrystalllites of (Fe 3 Si) 95 Nb 5 . The diffusion lengths of either Fe or Si and Ge at 650 K ͑the mean temperature of the ordering process͒ were estimated from tracer diffusion data ͑see Ref.…”
Section: Correlation Between Ordering and Thermal Vacancy Charactementioning
confidence: 99%
“…% Al, the type of defects at low temperatures are typically mono-vacancies. Figure 6b [59][60][61][62] shows the changes of the equilibrium vacancy concentration (C v ) of samples with different Al contents at different temperatures based on the experimental approaches. Obviously, the increase of either temperature or Al content will increase C v .…”
Section: Point Defects In the Super Cellsmentioning
confidence: 99%