“…Otherwise, Auger analysis showed the other surface preparations to be approximately equivalent with each leaving a thin contamination layer of C, 0, and Cl. We found that the normal surface treatment which we employ prior to liquid phase epitaxial growth (#1 in Table 1) and the NH 4 OH treatment (#5 in Table 1) gave the most reproducible results for a number of individual devices measured over a large area wafer. Accordingly we employed these surface treatments prior to in-situ etching in future work.…”