High-Temperature Annealing of Oxidized Silicon Surfaces

Montillo, F. J.; Balk, P.

doi:10.1149/1.2408355

Cited by 118 publications

(44 citation statements)

References 7 publications

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“…This result, however, differs from conclusions derived from experiments using nitrogen gas annealing for Si/ SiO~ systems (22)(23)(24). Raider et al reported that nitrogen would degrade the electrical properties of structures with thin SiO2 films under normal annealing conditions (25).…”

Section: Discussioncontrasting

confidence: 58%

Effect of Thermally Nitrided SiO2 (Nitroxide) on MOS Characteristics

Ito

Nakamura

Ishikawa

1982

J. Electrochem. Soc.

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Thermal nitridation of SiO2 in ammonia gas at elevated temperatures has been found to be useful for forming reliable thin gate insulators. Interfacial characteristics of MOS diodes with thermally nitrided SiO~ (nitroxide) films are significantly influenced by the nitridation conditions. At around 900~ hydrogen gas produced by the dissociation of ammonia gas deteriorates the quality of the starting SiO2 film, resulting in a negative shift of flatband voltages. Nitridation above 1100~ provides excellent properties for MOS diodes. The high field instability, which occurs just prior to dielectric breakdown, is avoided. A surface state density of lower than 1010 cm -2 eV -I is obtained at the Si midgap and the insulator charge becomes negligible. A strong barrier against contamination is formed on the SiO2 film. The mobile ion density of MOS diodes is reduced to the negligible range even if sodiumcontaminated gates are used. These features are attributable to not only the surface nitrided region of the nitroxide film but also the improved structure at the Si/SiO2 interface through the nitridation process.

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Section: Discussioncontrasting

confidence: 58%

Effect of Thermally Nitrided SiO2 (Nitroxide) on MOS Characteristics

Ito

Nakamura

Ishikawa

1982

J. Electrochem. Soc.

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“…As-grown oxide characteristics.--In general, the levels of oxide fixed charge and interface trap densities found in DRYPOX samples are similar to those reported in the literature (29,30) for oxides produced using conventional techniques. In particular, oxide fixed charge levels on the order of 105' cm -~ were observed, and were found to decrease upon postoxidation annealing.…”

Section: Summary and Discussionsupporting

confidence: 85%

Electrical Properties of Silicon Dioxide Films Fabricated at 700°C: III . High Pressure Thermal Oxidation

Trombetta

Zeto

Feigl

et al. 1985

J. Electrochem. Soc.

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High quality thermal oxides of silicon have been fabricated on silicon substrates over the oxidation temperature range 635~176 Dry, high pressure oxidation (DRYPOX) was used to grow oxides at temperatures below 1000~ The high pressure range investigated was 2-500 arm. Standard capacitance-voltage techniques have been used to characterize these oxides in terms of oxide fixed change (Q~) and interface trap densities (Di,). Additionally, avalanche injection of both electrons and holes has been used to evaluate the charge trapping properties of these films. The electron trapping properties of 685~ high pressure oxides were compared with "conventional" 1000~ oxides fabricated at 1 arm and with oxides fabricated using low pressure chemical vapor deposition (LPCVD) at 730~ The results of these experiments were as fellows: (i) basic electrical properties of high pressure oxides, as well as hole and electron trapping behavior in these oxides, were similar to those of 1000~ conventional oxides; (it) hole trap densities exhibited a broad minimum at an oxidation temperature between 800 ~ and 900~ and (iii) electron trapping behavior in 685~ DRYPOX oxides was markedly superior to that in 730~ LPCVD oxides. The LPCVD oxide required an anneal at 1000~ to produce electron trapping characteristics comparable to those of DRYPOX samples processed entirely at temperatures below 700~

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“…In particular, the electrically active P b -type defects may be electrically inactivated through chemical reaction with hydrogen, generally pictured as Si:H formation, 2, 16,18,21 which sweeps their energy levels out of the Si bandgap ͑see, e.g., Refs. 22 and 23͒.…”

Section: Introductionmentioning

confidence: 99%

Influence of interface relaxation on passivation kinetics in H2 of coordination Pb defects at the (111)Si/SiO2 interface revealed by electron spin resonance

Stesmans

2002

Journal of Applied Physics

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P b -type interface defects in (100) Si/SiO 2 structures grown in ozonated water solutionElectron spin resonance studies have been carried out on the isothermal passivation kinetics in 1 atm molecular H 2 of trivalent Si traps (P b s;Si 3 wSi • ͒ at the interface of thermal (111)/Si/SiO 2 as a function of oxidation temperature T ox in the range 250-1100°C. Interpretation within the generalized simple thermal ͑GST͒ passivation model, based on first-order interaction kinetics, reveals a distinct increase in spread E f in the activation energy for passivation E f with decreasing T ox ͑ϳ3 times in the covered T ox window͒, while the other key kinetic parameters ͑E f , preexponential factor͒ remain essentially unchanged. The variation in E f is ascribed to differently relaxed interfacial stress, affecting the spread in P b defect morphology. In a second analytic part, the impact of the variation in E f , and correlatively in the activation energy E d for P b H dissociation, on P b -hydrogen interaction kinetics is assessed within the GST-based full interaction scheme, describing parallel competing action of passivation and dissociation. In particular, the passivation behavior in 1 atm H 2 of an initially exhaustively depassivated P b system, is analyzed exposing, as a major result, that growing spreads E f , E d result in a drastic reduction in passivation efficiency ͑drop by four orders of magnitude for a threefold increase in E f ͒. For E f /E f տ20%, the P b system cannot be inactivated beyond the 90% level, incompatible with device quality requirements. Heating time/temperature vs spread conditions for optimum passivation in H 2 have been established, and the technological impact of altering E f , E d is discussed. At film edges and trench corners, which are vulnerable local regions of exces stress, and hence enhanced E f , E d , an edge defeat effect with respect to passivation is exposed. Within the relentless scaling of Si-based integrated circuit devices, the growing relative impact of edge regions may jeopardize proper passivation of interface traps in the conventional way in future device generations.

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High-Temperature Annealing of Oxidized Silicon Surfaces

Cited by 118 publications

References 7 publications

Effect of Thermally Nitrided SiO2 (Nitroxide) on MOS Characteristics

Effect of Thermally Nitrided SiO2 (Nitroxide) on MOS Characteristics

Electrical Properties of Silicon Dioxide Films Fabricated at 700°C: III . High Pressure Thermal Oxidation

Influence of interface relaxation on passivation kinetics in H2 of coordination Pb defects at the (111)Si/SiO2 interface revealed by electron spin resonance

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