2014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE ASIA) 2014
DOI: 10.1109/ipec.2014.6869991
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High switching performance of 1.7kV, 50A SiC power MOSFET over Si IGBT for advanced power conversion applications

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Cited by 21 publications
(11 citation statements)
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“…The results in the previous section showed the effect of changing the number of commutations in the electrical efficiency of the rectifier but there is still a need to quantify the actual switching losses, establish their share on the total losses figure and explore opportunities for further loss reduction. The double pulse test allows the estimation of switching losses, which depend on the voltage, the current, the switching frequency, the semiconductor device turn-on and turn-off times and the PCB layout [13]. The design of the PCB is of crucial importance to switching losses because it might introduce stray inductance that increases these losses [13].…”
Section: Double Pulse Testmentioning
confidence: 99%
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“…The results in the previous section showed the effect of changing the number of commutations in the electrical efficiency of the rectifier but there is still a need to quantify the actual switching losses, establish their share on the total losses figure and explore opportunities for further loss reduction. The double pulse test allows the estimation of switching losses, which depend on the voltage, the current, the switching frequency, the semiconductor device turn-on and turn-off times and the PCB layout [13]. The design of the PCB is of crucial importance to switching losses because it might introduce stray inductance that increases these losses [13].…”
Section: Double Pulse Testmentioning
confidence: 99%
“…The double pulse test allows the estimation of switching losses, which depend on the voltage, the current, the switching frequency, the semiconductor device turn-on and turn-off times and the PCB layout [13]. The design of the PCB is of crucial importance to switching losses because it might introduce stray inductance that increases these losses [13]. The results of the double pulse test give the switching energy loss during the turn-on and turn-off transient of a single MOSFET including the aforementioned dependencies in this practical experiment.…”
Section: Double Pulse Testmentioning
confidence: 99%
“…El SiC se considera el reemplazo del silicio para los elementos de potencia en la actualidad, los únicos inconvenientes en la actualidad son los costes de producción y fiabilidad [44]- [45].…”
Section: Convertidores De Potencia Con Elementos Semiconductores unclassified
“…This MOSFET is of rating 1700V, 4.9A. These devices because of low conduction & switching losses provide higher efficiency compared to Silicon (Si) based MOSFETs [8]- [9].…”
Section: Silicon Carbide(sic) Based Mosfetmentioning
confidence: 99%
“…I secpk is the peak secondary rms current; D max is the maximum duty cycle of PWM signal for minimum input voltage (V in(min) ) of 250V given by (9).…”
Section: G Rectifier Diode and Output Capacitor Selectionmentioning
confidence: 99%