High-Speed Waveguide-Integrated Avalanche Photodiodes for Near-Infrared Wavelengths on SiN-on-SOI Photonic Platform

Yanikgonul, Salih; Luo, Xianshu; Lo, GuoQiang

doi:10.1109/jlt.2022.3225464

Cited by 3 publications

(3 citation statements)

References 43 publications

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“…Monolithic heterogeneous integrated devices are attracting considerable interest. Monolithic integration of μLED and photodetector are not only for displays but also have a wide range of applications in on-chip optical interconnections, photonic chips and visible light communications (VLC) . The integration of photodetectors and μLED results in a compact chip structure that integrates receiving and transmitting ends and is needed to satisfy Moore’s Law .…”

Section: Introductionmentioning

confidence: 99%

Design and Photomodulation Performance of a UV-Driven Full GaN Integrated μLED and BJT Phototransistor

Su,

Wang,

Zou

et al. 2024

ACS Photonics

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A vertical integration of indium gallium nitride/ gallium nitride (InGaN/GaN)-based microlight-emitting diode (μLED) and GaN ultraviolet bipolar junction transistor (BJT) phototransistor (UVPT), based on the same GaN material and process platform (UVPT-μLED), was proposed. The integrated device is a novel integrated device with light-emitting, detecting, sensing, driving and regulating functions. It can be used as a receiver and transmitter. The light-emission effect of the μLED on UVPT can be regulated by changing the power of an external light. Optical-electrical-optical conversion was conducted with Silvaco TCAD software. Electro-optic modulation characteristics and optical power amplification were attained through a Silvaco TCAD simulation. By optimization of the size and concentration of the device epitaxial, the current gain of the optimized device reaches a maximum of 240. The UVPT-μLED device shows a strong response to small-power light and a stable response to high-power light. The UVPT-μLED chip with a high switching ratio was successfully prepared and used to verify the feasibility of the UVPT-μLED device. The proposed monolithic integrated device not only can be used for traditional displays but also shows great potential in intelligent displays, such as human−computer interactive systems, on-chip optical interconnects, photonic chips and visible-light communications.

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Section: Introductionmentioning

confidence: 99%

Design and Photomodulation Performance of a UV-Driven Full GaN Integrated μLED and BJT Phototransistor

Su,

Wang,

Zou

et al. 2024

ACS Photonics

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“…It is widely used in laser ranging, optical fiber communication, security monitoring, and other fields [4][5][6]. The APD consists of two main components: an absorption layer that absorbs photons to generate photoinduced carriers and a carrier multiplication layer utilizing the avalanche multiplier effect [7,8]. In recent years, there has been growing interest in the research on APDs employing a separation structure with InP as the multiplier layer and InGaAs as the absorption layer for improved performance [9,10].…”

Section: Introductionmentioning

confidence: 99%

Achievement of non-charge layer InGaAs/Si avalanche photodiodes by introducing a groove ring at the bonding interface

Ke,

Wang,

Huang

et al. 2024

Phys. Scr.

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The avalanche photodiode (APD) is a prototypical example of a fast and high-gain detector, particularly in the infrared band, where it plays a crucial role in both military and civil optoelectronic devices. The combination of indium gallium arsenide (InGaAs) and silicon (Si) offers an ideal solution for achieving high-performance APDs. For traditional InGaAs/Si APDs, the incorporation of a p-Si charge modulation layer between InGaAs and Si is necessary for electric field modulation. This ensures that a high electric field is maintained in the multiplication layer while keeping it low in the absorption layer. However, the preparation of the p-Si charge modulation layer necessitates a tedious and expensive ion implantation process. Besides, the ion implantation process can also lead to material surface contamination that significantly affects the performance of the device. In this paper, an InGaAs/Si APD without the charge layer is reported. This approach is based on semiconductor direct bonding technology, wherein a groove ring is introduced into the bonding interface to replace the charge layer to regulate the electric field distribution. The electric field of the absorption layer and the multiplier layer is controlled by adjusting the number of grooved rings. By introducing 11 grooved rings into the bonding interface, we achieve a remarkable gain bandwidth product of 88.55 GHz. These findings hold significant implications for the future development of non-charge layer InGaAs/Si APDs with high-gain bandwidth products.

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“…A key technical challenge for the development of visible-light devices is the coupling of the APD to the input waveguide: while interlayer transitions are the common approach for infrared devices, it is challenging for visible wavelengths due to the long coupling lengths required, and may lead to trade-offs in noise and bandwidth performance [26]. However, we also note that several recent reports have utilized this approach at or near visible wavelengths [27], [28], [29].…”

Section: Introductionmentioning

confidence: 99%

Visible-Light Integrated PIN Avalanche Photodetectors With High Responsivity and Bandwidth

Gundlapalli

Leong

Ong

et al. 2023

J. Lightwave Technol.

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Integrated photodetectors are key building blocks of scalable photonics platforms. Many recent improvements have been made for integrated avalanche photodetectors (APDs) operating at infrared telecommunications wavelengths, but their visible-spectrum counterparts remain relatively unexplored. Here, we demonstrate PIN-doped silicon APDs for visible light detection, monolithically integrated with a silicon nitride photonics circuit via end-fire coupling. An in-depth study of multiple PIN doping profiles reveals different optimal designs based on the desired operating regimes. At −49 dBm input power, they show 0.25 A/W (0.8 A/W) responsivity at reverse bias as low as 0.5 V (5.5 V), with corresponding dark current of <3 pA (50 pA). We also report fast RF response with an optimal 3 dB bandwidth of 11 GHz and gain-bandwidth product of 142 GHz, with all devices yielding open eye diagrams at 25 Gbps or above. Coupled with CMOS-compatible fabrication, our APDs will enable scalable photonics applications in sensing, communications, and quantum technologies at visible wavelengths.

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High-Speed Waveguide-Integrated Avalanche Photodiodes for Near-Infrared Wavelengths on SiN-on-SOI Photonic Platform

Cited by 3 publications

References 43 publications

Design and Photomodulation Performance of a UV-Driven Full GaN Integrated μLED and BJT Phototransistor

Design and Photomodulation Performance of a UV-Driven Full GaN Integrated μLED and BJT Phototransistor

Achievement of non-charge layer InGaAs/Si avalanche photodiodes by introducing a groove ring at the bonding interface

Visible-Light Integrated PIN Avalanche Photodetectors With High Responsivity and Bandwidth

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