High-Speed Resonant Gate Driver With Controlled Peak Gate Voltage for Silicon Carbide MOSFETs

Anthony, Philip; McNeill, Neville; Holliday, Derrick

doi:10.1109/tia.2013.2266311

Cited by 67 publications

(22 citation statements)

References 11 publications

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“…13 shows a thermal image of the experimental hardware captured at full-load and at thermal steady state. A thermal superposition test was carried out to enable an approximation of the losses [25]. Through-hole packaged devices were selected to enable their connection to a single heatsink.…”

Section: Resultsmentioning

confidence: 99%

Auxiliary Resonant Source Charge Extraction Circuitry for Enabling the Use of Super Junction MOSFETs in High Efficiency DC-DC converters

Hopkins

Simpson

McNeill

2019

2019 IEEE Applied Power Electronics Conference and Exposition (APEC)

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In this paper a high efficiency DC-DC converter power stage employing silicon Super-Junction (SJ) MOSFETs is presented. These devices have low on-state resistances and fast switching capabilities. However, their intrinsic body diode has a very poor reverse recovery behavior and they have an output capacitance that has a highly non-linear inverse relationship with voltage. These characteristics lead to problematic charging currents when they are used in bidirectional voltage source converters.These problems are addressed through implementation of an auxiliary resonant source charge extraction circuit in conjunction with anti-series MOSFETs. The result is a 5-kW power converter with a power semiconductor stage full-load efficiency exceeding 99% and requiring no forced cooling.

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Section: Resultsmentioning

confidence: 99%

Auxiliary Resonant Source Charge Extraction Circuitry for Enabling the Use of Super Junction MOSFETs in High Efficiency DC-DC converters

Hopkins

Simpson

McNeill

2019

2019 IEEE Applied Power Electronics Conference and Exposition (APEC)

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“…The resonant gate driver or current gate driver have been developed as efficient and simple solutions. In [26] a resonant gate driver was developed. The driver can work at high frequency and it can reduce the SiC MOSFETs switching losses.…”

Section: B Gate Drivers As a Solution For Improving The Sic Mosfet Dmentioning

confidence: 99%

A Novel Active Gate Driver for Improving SiC MOSFET Switching Trajectory

Camacho

Sala

Ghorbani

et al. 2017

IEEE Trans. Ind. Electron.

160

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The trend in power electronic applications is to reach higher power density and higher efficiency. Currently, the wide band-gap devices such as Silicon Carbide MOSFET (SiC MOSFET) are of great interest because they can work at higher switching frequency with low losses. The increase of the switching speed in power devices leads to high power density systems. However, this can generate problems such as overshoots, oscillations, additional losses and electromagnetic interference (EMI). In this paper, a novel active gate driver (AGD) for improving the SiC MOSFET switching trajectory with high performance is presented. The AGD is an open-loop control system and its principle is based on gate energy decrease with a gate resistance increment during the Miller Plateau effect on gatesource voltage. The proposed AGD has been designed and validated through experimental tests for high-frequency operation. Moreover, an EMI discussion and a performance analysis were realized for the AGD. The results show that the AGD can reduce the overshoots, oscillations and losses without compromising the EMI. Besides, the AGD can control the turn-on and turn-off transitions separately and it is suitable for working with asymmetrical supplies required by SiC MOSFETs.

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“…The applications that adopt SiC technology can utilize higher switching frequency, together with lower losses and high-temperature capability, showing evident advantages over conventional Si-based applications in terms of performance and volume [4][5][6]. However, the fast switching characteristics of SiC MOSFET also poses challenges as their benefits are limited by the packaging technology, specifically the parasitic parameters [7][8][9][10]. Due to large dv/dt slew rate, the parasitic capacitance in the SiC MOSFET brings crosstalk and false turn-on issues, which have been discussed in previous studies [11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%