High Speed Optical TIR Switches Using PLZT Thin-Film Waveguides on Sapphire

Higashino, Hidetaka; Kawaguchi, Takazo; Adachi, Hideaki; Makino, T.; Yamazaki, Osamu

doi:10.7567/jjaps.24s2.284

Cited by 37 publications

(4 citation statements)

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“…High speed operation of the switch was investigated using the traveling wave electrodes. 2 GHz switching operation was achieved with 0.83-pm laser diode light and avalanche photo diode detector [27]. Fig.…”

Section: B Electrooptic Devicesmentioning

confidence: 99%

Sputtering preparation of ferroelectric PLZT thin films and their optical applications

Adachi

Wasa

1991

IEEE Trans. Ultrason., Ferroelect., Freq. Contr.

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Preparation of epitaxial PLZT thin films on sapphire has been investigated, and excellent ferroelectric properties such as piezoelectricity and electrooptic effect with high transparency were obtained in thin films. Moreover, a preparation process was developed involving the multitarget sputtering method, and strict control of film composition and epitaxial growth with the buffer layer of graded composition were performed. Using these PLZT thin films, some optical applications, including an acoustooptic deflector and an electrooptic guided-light switch, are shown.

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Section: B Electrooptic Devicesmentioning

confidence: 99%

Sputtering preparation of ferroelectric PLZT thin films and their optical applications

Adachi

Wasa

1991

IEEE Trans. Ultrason., Ferroelect., Freq. Contr.

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“…A variety of vapor-phase processes such as rf-sputtering, pulsed laser deposition, and metalorganic chemical vapor deposition have been attempted for growing epitaxial PLZT thin films. It is apparently difficult to grow epitaxial EO waveguides with a propagation loss of less than 1 dB/cm [5,6]. It is also a critical issue to control compositional and thickness uniformity in these vapor-phase processes, since optical properties of waveguide devices are sensitive to composition and thickness.…”

Section: Introductionmentioning

confidence: 99%

High-speed PLZT optical switches for burst and packet switching

Nashimoto

Tanaka

Labuda

et al. 2005

2nd International Conference on Broadband Networks, 2005.

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Pb,La)(Zr,Ti)O 3 (PLZT) is one of the best candidates in terms of high-speed, low-voltage, and low-power consumption optical switching due to its efficient voltage-induced index change. We have established a solid-phase epitaxy to grow low-loss PLZT thin film waveguides. PLZT waveguides with PLZT buffer layers are grown on Nb-doped semiconductive SrTiO 3 substrates for the effective overlap integral of the optical field and the electric field. Efficient switching of light coupled in the waveguides is achieved by applying voltage between the top electrodes and the substrates to induce the excellent electro-optic properties of PLZT waveguides including low-voltage and polarization independent index change. 1xN optical switching devices and subsystems are demonstrated using the PLZT waveguide switch elements showing low-voltage drive and less than 10 ns response characteristics.

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“…Generally, the thin film technology has contributed to great extent for the growth of various electronic devices for optical memory and communication purpose [1][2][3][4]. There is a necessity for high speed integrated optical devices for optical communications in future.…”

Section: Introductionmentioning

confidence: 99%

Preparation of Textured Growth Pb(Zr,Ti)O 3 Thin Films on Si Substrate Using SrTiO 3 as Buffer Layers

Kao¹,

Kuraganti²,

Tsai³

et al. 2003

Integrated Ferroelectrics

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PZT thin films are deposited on SiO 2 /Si substrate by metallo-organic decomposition (MOD) process, using SrTiO 3 (STO) as buffer layer for textured growth. The STO layers deposited on SiO 2 /Si substrate by pulsed laser deposition process show (100)/(200) preferred orientation, whereas the STO buffer layer deposited on silica substrate using spin-coating technique show random orientation behavior. The use of STO as buffer layers enhanced the crystallization and the preferred orientations of the PZT films. The PZT on STO buffered SiO 2 /Si substrates thus obtained possess high refractive index, (n) PZT/STO = 2.1159, and are of good enough quality for optical waveguide applications.

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High Speed Optical TIR Switches Using PLZT Thin-Film Waveguides on Sapphire

Cited by 37 publications

References 0 publications

Sputtering preparation of ferroelectric PLZT thin films and their optical applications

Sputtering preparation of ferroelectric PLZT thin films and their optical applications

High-speed PLZT optical switches for burst and packet switching

Preparation of Textured Growth Pb(Zr,Ti)O 3 Thin Films on Si Substrate Using SrTiO 3 as Buffer Layers

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