High-speed operation of strained InGaAs/InGaAsP MQW lasers under zero-bias condition

Odagawa, T.; Nakajima, Kensuke; Tanaka, Kazuhiro; Nobuhara, H.; Inoue, Tadao; Okazaki, N.; Wakao, K.

doi:10.1109/3.234421

Cited by 11 publications

(3 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…7 A previous study measured the carrier recombination coefficient for 1.5 m strainedlayer quantum well lasers having different SCH structures from the frequency response below the threshold. 8,10 This study showed that the carrier recombination coefficient to determine the response below the threshold is not that of the well layer itself, but the effective value for the quantum well structure including SCH layers. This coefficient is called the effective carrier recombination coefficient (B eff ).…”

Section: Influence Of Separate Confinement Heterostructures On the Efmentioning

confidence: 97%

Influence of separate confinement heterostructures on the effective carrier recombination coefficient in quantum well laser structures

Yamamoto

Odagawa

Tanaka

et al. 1997

Applied Physics Letters

View full text Add to dashboard Cite

We analyzed the carrier recombination coefficient of quantum well laser structures by combining two-level ambipolar rate equations and a carrier diffusion equation for the separate confinement heterostructure (SCH) layer. We derived a new analytical expression for the effective carrier recombination coefficient (Beff) in quantum well laser structures. From our analysis, we found out that the dominant factor that determines Beff is not the diffusion across the SCH layer but the ratio of confined carriers in the well to the total carriers in both the well and the SCH layers. Our new expression well explained the measured results of 1.3 μm strained-layer quantum well lasers with SCH layers of different thicknesses.

show abstract

Section: Influence Of Separate Confinement Heterostructures On the Efmentioning

confidence: 97%

Influence of separate confinement heterostructures on the effective carrier recombination coefficient in quantum well laser structures

Yamamoto

Odagawa

Tanaka

et al. 1997

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…(11,12) have proved that as amb ient temperature percentage amount of german iu m and relat ive refractive index difference increase, the total losses of silicadoped material based waveguide also increase. But as operating signal wavelength increase, the total loss of silica-doped material based waveguide decreases.…”

Section: V)mentioning

confidence: 99%

Current Trends of High capacity Optical Interconnection Data Link in High Performance Optical Communication Systems

Rashed¹

2013

IJISA

View full text Add to dashboard Cite

Abstract-Optical technologies are ubiquitous in telecommunications networks and systems, providing multiple wavelength channels of transport at 2.5 Gbit/sec to 40 Gbit/sec data rates over single fiber optic cables. Market pressures continue to drive the number of wavelength channels per fiber and the data rate per channel. This trend will continue for many years to come as electronic commerce grows and enterprises demand higher and reliable bandwidth over long distances. Electronic commerce, in turn, is driving the growth curves for single processor and multiprocessor performance in data base transaction and Web based servers. Ironically, the insatiable taste for enterprise network bandwidth, which has driven up the volume and pushed down the price of optical components for telecommunications, is simultaneously stressing computer system bandwidth increasing the need for new interconnection schemes and providing for the first time commercial opportunities for optical components in computer systems. The evolution of integrated circuit technology is causing system designs to move towards communication based architectures. We have presented the current tends of high performance system capacity of optical interconnection data transmission link in high performance optical communication and computing systems over wide range of the affecting parameters.

show abstract

“…In quantum well (QW) lasers, the maximum modulation bandwidth and resonance characteristics are aOE ected by carrier transport across the con® nement layer and spectral and spatial inhomogeneities [2,3]. DiOE erent con® nement layers, which are introduced in the QW lasers to improve the optical con® nement, result in carrier transport eOE ect [4,5]. The single-mode rate equations, which are normally used to describe the modulation 525 Fiber and Integrated Optics,20(5) dynamics of QW lasers, fail to explain the resonance characteristics profoundly because of the exclusion of factors such as spatial and spectral inhomogenities.…”

mentioning

confidence: 99%

Carrier Dynamics of Quantum Well Bistable Lasers

Madhan¹,

Gunasekaran²,

Vaya³

2001

Fiber and Integrated Optics

View full text Add to dashboard Cite

The inXuence of carrier capture and transport eVects on static and dynamic characteristics of multiple quantum well (MQW) bistable lasers are studied using the well barrier hole burning and carrier transport models. In the well barrier hole burning model, the ratio of carrier capture to release time (Z) is varied and the hysterisis width, transient behavior are analyzed. Furthermore, the eVect of carrier transport time on the bistable characteristics are also studied. The analyses are done by simulating the equivalent circuit of MQW bistable laser using the circuit simulation program Pspice. The hysterisis width is found to increase with an increase in Z and transport time. In the transient simulation, increased turn on delay is observed in the case of a higher value of Z. Larger transport time also results in delayed output response.

show abstract

High-speed operation of strained InGaAs/InGaAsP MQW lasers under zero-bias condition

Cited by 11 publications

References 10 publications

Influence of separate confinement heterostructures on the effective carrier recombination coefficient in quantum well laser structures

Influence of separate confinement heterostructures on the effective carrier recombination coefficient in quantum well laser structures

Current Trends of High capacity Optical Interconnection Data Link in High Performance Optical Communication Systems

Carrier Dynamics of Quantum Well Bistable Lasers

Contact Info

Product

Resources

About