High-speed NMOS circuits made with X-ray lithography and reactive sputter etching

Suciu, P.I.; Fuls, E.N.; Boll, H.

doi:10.1109/edl.1980.25208

Cited by 32 publications

(2 citation statements)

References 5 publications

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“…For the first approach, there are several device technologies that provide ultra-low noise amplifiers above 274 Mb/s: (i) Simicrowave bipolar transistors," (ii) GaAs-MESFETS,32 and (iii) Si short-channel MOSFETS. 18,33 Although Si bipolar transistors will deliver better noise characteristics than FETS above 300 Mb/s, theoretically FETS are still useful for high bit-rate amplifiers because the cut-off frequency (-4 GHz) of practical bipolar transistors is lower than that of FETS (10 -25 GHz). An avalanche photodiode APD receiver delivers much higher sensitivities, theoretically, even with its intrinsic excess noise factor.…”

Section: Receiver Sensitivitymentioning

confidence: 99%

Considerations for Single-Mode Fiber Systems

Ogawa¹

1982

Bell System Technical Journal

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Section: Receiver Sensitivitymentioning

confidence: 99%

Considerations for Single-Mode Fiber Systems

Ogawa¹

1982

Bell System Technical Journal

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“…A dramatic increase in device performance results from fabricating properly-designed MOSFETs with submicron channel lengths (1). As a direct result of these short channels subnanosecond circuits become practical, and further increase the inexorable pressure towards ever-finer features.…”

Section: Introductionmentioning

confidence: 99%

Scaling the micron barrier with x-rays

Lepselter¹

1980

1980 International Electron Devices Meeting

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INTRODUCTIONA dramatic increase in device performance results from fabricating properly-designed MOSFETs with submicron channel lengths (1). As a direct result of these short channels subnanosecond circuits become practical, and further increase the inexorable pressure towards ever-finer features.The challenge, as well as opportunity, has been to develop the necessary tools to successfully allow fabrication and design of this new breed of devices. To this end, numerical simulation programs (2) have been developed to allow accurate device modelling, and a radically ne\?: semiconductor lithographic technology based on the use of 4.36A X-rays has been implemented.The exposure tool, the X-ray mask, and the X-ray resist will be described. SCALINGAs the technological process steps become more complicated and thus more expensive, the numerical simulation of the problems arising from short-channel design for MOS devids has emerged as a very elegant way to solve some of the main problems. This simulation must not be restricted to the device itself but has to include a more or less accurate description of the process steps themselves, if the interrelation between processing and device behavior is to be successfully modelled. Simulation packages have been developed which allow a first-principle computer modelling of process steps and device behavior in one and two dimensions in a routine way: a. Modelling of implantation, predeposition and annealing steps in one and two dimensions.b. Modelling of MOS device performance in two dimensions.As MOSFET dimensions are reduced, it is desirable to preserve long-channel behavior. In general, lower voltages, shallower junctions, thinner oxides and heavier doping help to maintain longchannel behavior as channel length is reduced. We have proposed a generalized guide for MOSFET miniaturization at the IEDM 1979 (3) which provides a simple estimate for MOSFET parameters, not requiring reduction of all dimensions by the same scale.As a representative example, Fig. 1 shows the Z D / V~ characteristics for an MOS device with LcR = 0.4 pm.At higher drain voltages, this device is limited in performance by velocity saturation of the electrons in the channel. The sourcedrain breakdown of this device occurs at V , = 5.2V for V,, = OV. l D / V , characteristics for 0.4 p m transistor: oxide thickness 230A junction depth 0.25 p m channel doping X-RAY LITHOGRAPHY The Exposure SystemThe rudiments of an X-ray proximity printer are illustrated in Fig. 2 (4). A 4 kilowatt electron beam is focused onto a stationary, water-cooled palladium cone-target, which in turn emits X-rays at a characteristic wavelength of 4.36A. Cooling is done by the nucleate boiling of high-velocity water flowing across the outside of the palladium cone ( 5 ) .The resist-coated sample is held on a chuck in a helium filled chamber, at atmospheric pressure. The X-rays pass through a beryllium window and expose the un-masked resist, passing along a straight line emanating from the focused spot 50 cm away. (6) The X-Ray Mask

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A Long-Wavelength Optical Receiver Using a Short-Channel Si-MOSFET

Ogawa¹,

Owen²,

Boll³

1983

Bell System Technical Journal

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Recent improvements in fine‐line technology have resulted in silicon metal oxide semiconductor field‐effect transistors (MOSFETs) with channel lengths between 0.2 and 0.8 μm. We have measured the low‐frequency noise in these transistors and find it to be smaller than that in comparable GaAs‐metal Schottky valve field‐effect transistors (MESFETs). Theoretical considerations on the FET noise and experimental results at 45 Mb/s indicate that Si‐MOSFETs can compete with GaAs‐MESFETs in hybrid photoamplifier circuits. As a natural extension, Si‐MOSFETs can also be used for the complete monolithic integration of the receiver circuit with the benefits of reliability and improved performance.

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High-speed NMOS circuits made with X-ray lithography and reactive sputter etching

Cited by 32 publications

References 5 publications

Considerations for Single-Mode Fiber Systems

Considerations for Single-Mode Fiber Systems

Scaling the micron barrier with x-rays

A Long-Wavelength Optical Receiver Using a Short-Channel Si-MOSFET

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