High-Speed Interconnect System Using QPSK Scheme Based on Substrate Integrated Waveguide

Abstract

In this paper, Quadrature Phase Shift Keying (QPSK) modulation and demodulation system based on a Substrate Integrated Waveguide (SIW) is designed and implemented for high-speed data transmission. The technique of orthogonal multiplexing allows two independent channels to transmit data simultaneously through one waveguide structure. For this proof-of-principle study, a fabricated SIW prototype with bandwidth of 14–28 GHz is designed and optimized through full-wave simulations. The QPSK system prototype is verified with different data rates and bit patterns. Experimental results demonstrate that the bit error rates (BERs) of the received data in channel I/Q are less than 10–12 and the transmission rate can reach up to 15 Gb/s for 27-1 Pseudo Random Binary Sequence (PRBS). The transmission data rate of the proposed QPSK system is two times higher than that of the conventional mixing system.

Substrate integrated waveguide interconnects in high-speed electronic systems

“…折叠基片集成波导互连的面积是相同带宽基片集成波导互连的一半, 已 在 CMOS 集成电路工艺中得到了应用 [18] . 进一步, 为了提高信道利用率, 正交移相键控 (quadrature phase shift keyin, QPSK) [19,20] 、正交振幅调制 (quadrature amplitude modulation, QAM) [21,22] 等调 制技术在 SIW 的传输系统中得以应用, 大幅提高了数据传输速率. 值得注意的是, 调制技术采用混频 器、放大器等微波元器件, 目前这些器件的带宽限制了 SIW 传输系统的带宽, 成为限制传输速率进一 步提升的主要因素.…”

“…值得注意的是, 调制技术采用混频 器、放大器等微波元器件, 目前这些器件的带宽限制了 SIW 传输系统的带宽, 成为限制传输速率进一 步提升的主要因素. 采用 PCB 工艺 Rogers5880 的基片集成波导互连的损耗为 0.006 dB/mm, 已实现 的最高传输速率为 15 Gbps [20] . TEM 模式的基片集成同轴波导互连 (SICL), 与方同轴波导类似, 上下导体板和两侧金属过孔阵 列构成了同轴互连结构的外导体, 中间的金属线则作为内导体, 金属层之间为介质 [3] .…”

Proposal and simulation of a DC–110 GHz waveguide using metal shielding and three-dimensional extension structure

“…10) As further increases of the transmission distance, the losses at high frequency of these electrical interconnect techniques will aggravate the power consumption of the system as well. 11) A coplanar waveguide (CPW), a microwave planar transmission line with excellent performance and easy to process, provides a feasible scheme for the study of millimeter wave interconnects. [12][13][14][15] It is characterized by propagation of TEM waves, no cut-off frequency and compatibility with other 2D planar circuits.…”