High-speed integrated nanowire circuits

Friedman, Robin S.; McAlpine, Michael C.; Ricketts, David S.; Ham, Donhee; Lieber, Charles M.

doi:10.1038/4341085a

Cited by 314 publications

(237 citation statements)

References 11 publications

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“…Furthermore, we extend our approach to the fabrication of strained silicon multi-NWs. Multi-NW silicon transistors have been reported as promising building blocks for high-performance logic inverters, fast ring oscillators and demultiplexers 18,19 . These devices offer excellent electrostatic control, and higher drive current than those with single wires 20 .…”

Section: Strain Enhancement In Dumbbell-shaped Si Nano Structuresmentioning

confidence: 99%

Top-down fabricated silicon nanowires under tensile elastic strain up to 4.5%

et al. 2012

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strained si nanowires are among the most promising transistor structures for implementation in very large-scale integration due to of their superior electrostatic control and enhanced transport properties. Realizing even higher strain levels within such nanowires are thus one of the current challenges in microelectronics. Here we achieve 4.5% of elastic strain (7.6 GPa uniaxial tensile stress) in 30 nm wide si nanowires, which considerably exceeds the limit that can be obtained using siGe-based virtual substrates. our approach is based on strain accumulation mechanisms in suspended dumbbell-shaped bridges patterned on strained si-on-insulator, and is compatible with complementary metal oxide semiconductor fabrication. Potentially, this method can be applied to any tensile prestrained layer, provided the layer can be released from the substrate, enabling the fabrication of a variety of strained semiconductors with unique properties for applications in nanoelectronics, photonics and photovoltaics. This method also opens up opportunities for research on strained materials.

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Section: Strain Enhancement In Dumbbell-shaped Si Nano Structuresmentioning

confidence: 99%

Top-down fabricated silicon nanowires under tensile elastic strain up to 4.5%

et al. 2012

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“…The transit time of the charge carriers is a crucial factor limiting the high frequency response of nanoscale devices; however, traditional radio-frequency measurements are often limited by the high impedance or the RC constants of the devices [4][5][6][7][8] . Alternatively, optical ultrafast measurement techniques have been widely used to investigate charge carrier dynamics with a time resolution determined by the optical pulse width (down to a few femtoseconds) 9 .…”

mentioning

confidence: 99%

Imaging Ultrafast Carrier Transport in Nanoscale Field-Effect Transistors

et al. 2014

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One-dimensional nanoscale devices, such as semiconductor nanowires (NWs) and singlewalled carbon nanotubes (SWNTs), have been intensively investigated because of their potential application of future high-speed electronic, optoelectronic, and sensing devices 1-3 .To overcome current limitations on the speed of contemporary devices, investigation of charge carrier dynamics with an ultrashort time scale is one of the primary steps necessary for developing high-speed devices. In the present study, we visualize ultrafast carrier dynamics in nanoscale devices using a combination of scanning photocurrent microscopy and timeresolved pump-probe techniques. We investigate transit times of carriers that are generated near one metallic electrode and subsequently transported toward the opposite electrode based on drift and diffusion motions. Carrier dynamics have been measured for various working conditions. In particular, the carrier velocities extracted from transit times increase for a larger negative gate bias, because of the increased field strength at the Schottky barrier. *Electronic mail: ahny@ajou.ac.kr 2The transit time of the charge carriers is a crucial factor limiting the high frequency response of nanoscale devices; however, traditional radio-frequency measurements are often limited by the high impedance or the RC constants of the devices [4][5][6][7][8] . Alternatively, optical ultrafast measurement techniques have been widely used to investigate charge carrier dynamics with a time resolution determined by the optical pulse width (down to a few femtoseconds) 9 . Recently, researchers have reported visualizing charge carrier movements in free-standing Si NWs using an ultrafast pump-probe imaging technique 10,11 . The carrier diffusion motions induced by a pump pulse located in the middle of the NWs were visualized; however, these optical measurements are limited for interrogating the carrier dynamics in operating devices because they strongly depend on the non-linear properties of materials and they are frequently obscured by the substrate signals. Consequently, these techniques are not ideal for low-dimensional systems with NWs thinner than the optical spot size (<100 nm) or with SWNTs.Scanning photocurrent microscopy (SPCM) techniques have been introduced as powerful tools for investigating local optoelectronic characteristics, such as metallic contacts, defects, interfaces, and junctions [12][13][14][15][16][17][18][19] . We were able to collect localized electronic band information that is not disturbed by signals originating from the substrate, and hence, compared with conventional optical pump-probe techniques, SPCM can provide a higher signal-to-noise ratio. Only recently, ultrafast pump-probe photocurrent techniques have been demonstrated for studying carrier dynamics in carbon nanotube devices by using a collinear pump and probe beams, focused at the same position 20,21 . In addition, ultrafast phenomena in graphene and GaAs NWs have been investigated by measuring terahertz radiation that results from...

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“…To date, a broad spectrum of single crystalline nanomaterials with tailored properties have been synthesized, and have been successfully demonstrated as the building blocks of various high-performance device elements, such as transistors (6 -17), optical devices (18 -20), sensors (21-26), energyscavenging devices (27), and simple circuit structures (7,17,19,28). These synthetic materials present a number of key advantages over their bulk counterparts.…”

mentioning

confidence: 99%

Large-scale, heterogeneous integration of nanowire arrays for image sensor circuitry

Fan

Jacobson

et al. 2008

Proc. Natl. Acad. Sci. U.S.A.

239

235

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We report large-scale integration of nanowires for heterogeneous, multifunctional circuitry that utilizes both the sensory and electronic functionalities of single crystalline nanomaterials. Highly ordered and parallel arrays of optically active CdSe nanowires and high-mobility Ge/Si nanowires are deterministically positioned on substrates, and configured as photodiodes and transistors, respectively. The nanowire sensors and electronic devices are then interfaced to enable an all-nanowire circuitry with on-chip integration, capable of detecting and amplifying an optical signal with high sensitivity and precision. Notably, the process is highly reproducible and scalable with a yield of Ϸ80% functional circuits, therefore, enabling the fabrication of large arrays (i.e., 13 ؋ 20) of nanowire photosensor circuitry with image-sensing functionality. The ability to interface nanowire sensors with integrated electronics on large scales and with high uniformity presents an important advance toward the integration of nanomaterials for sensor applications.nanomaterials ͉ printable electronics ͉ devices ͉ transistors ͉ imager C hemically derived, synthetic nanomaterials with low dimensionality and well defined atomic composition present a unique route toward miniaturization of electronic and sensor components while enhancing their performance and functionality (1-5). To date, a broad spectrum of single crystalline nanomaterials with tailored properties have been synthesized, and have been successfully demonstrated as the building blocks of various high-performance device elements, such as transistors (6 -17), optical devices (18 -20), sensors (21-26), energyscavenging devices (27), and simple circuit structures (7,17,19,28). These synthetic materials present a number of key advantages over their bulk counterparts. For instance, downscaling of the active sensing material to the nanoscale regime has been shown to enhance the sensitivity of chemical, biological, and optical sensors by orders of magnitude (21-26). To enable the implementation of nanosensors for various technological applications, on-chip integration with electronics is needed to enable automated and accurate processing of the signal. Here, we demonstrate an all-integrated, heterogeneous nanowire (NW) circuitry, capable of detecting and amplifying an optical signal with high sensitivity and responsivity. By implementing our recently developed contact printing technology (29, 30), large arrays of optically active CdSe NWs and high-mobility core/shell Ge/Si NWs are assembled at well defined locations on substrates, and configured as integrated sensor and electronic active components of an all-nanowire circuitry with image-sensing capability. Results and DiscussionIn this work, direct band gap CdSe NWs were used as a model system for the optical sensor elements, capable of detecting visible light with high sensitivity. CdSe-and CdS-based nanomaterials such as quantum dots and NWs have been extensively explored in the past, and their superb optical and opto-electric...

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High-speed integrated nanowire circuits

Cited by 314 publications

References 11 publications

Top-down fabricated silicon nanowires under tensile elastic strain up to 4.5%

Top-down fabricated silicon nanowires under tensile elastic strain up to 4.5%

Imaging Ultrafast Carrier Transport in Nanoscale Field-Effect Transistors

Large-scale, heterogeneous integration of nanowire arrays for image sensor circuitry

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