High speed (&gt;13 GHz) modulation of 850 nm vertical cavity surface emitting lasers (VCSELs) with tapered oxide confined layer

Chang, Ya-Wen; Kuo, Hao‐Chung; Lai, Fang‐I; Tzeng, K. F.; Yu, Hsin-Chieh; Sung, Cheng Kuo; Hong, Yang; Wang, S. C.

doi:10.1049/ip-opt:20045068

Cited by 12 publications

(5 citation statements)

References 8 publications

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“…This value is comparable with the value of 6.5 GHz/√mA obtained by Chang et al [24]. (iii) K-factor: For analog modulation applications of a single-mode VCSEL a low value of K-factor is beneficial [21].…”

Section: (Ii) Modulation Current Efficiency Factor (Mcef)supporting

confidence: 84%

Improvement of modulation performance and bandwidth of a 980 nm strained In0.2Ga0.8As/GaAs QW VCSEL

Basak

Islam

2010

J Opt

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In this work, the effect of differential gain of a strained In 0.2 Ga 0.8 As/GaAs QW VCSEL on its resonance frequency has been studied with the aim of improving the high speed performance of a 980 nm VCSEL. Computations using the analytical expression of modulation response show that the resonance frequency of a VCSEL increases with the increase of differential gain. The differential gain of a VCSEL has been varied from 5.1× 10 -16 cm 2 -11×10 -16 cm 2 . It has been observed that a differential gain value of 10×10 -16 cm 2 contributes to a maximum resonance frequency of 5.65 GHz at 3 mA injection current and an active radius of 5.65 μm. For this combination of parameter values a maximum bandwidth of 8.75 GHz of a VCSEL has been achieved. Computations show that the maximum value of differential gain needs to be kept within 10×10 -16 cm 2 ; otherwise the performance of the laser degrades due to large reduction of carrier density as well as the amplification gain. The resonance frequency of a VCSEL has further been increased upto 9.69 GHz by increasing the injection current from 3 mA to 7.4 mA and reducing the noise amplitude. The corresponding bandwidth has been obtained as 15 GHz. The maximum computed value of D-factor is 3.76 GHz/√mA and the value of K-factor is computed as 0.17 ns which indicate good performance.

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Section: (Ii) Modulation Current Efficiency Factor (Mcef)supporting

confidence: 84%

Improvement of modulation performance and bandwidth of a 980 nm strained In0.2Ga0.8As/GaAs QW VCSEL

Basak

Islam

2010

J Opt

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“…To decrease the parasitic capacitance, the multiple oxide layer was proposed to replace the single oxide layer because the device capacitance is inversely proportional to the oxide layer thickness [5][6][7] . Figure 3 shows the simulated frequency responses of the VCSEL with the singleand double-confined oxide layers.…”

Section: Design Of the High-speed 850-nm Vcselmentioning

confidence: 99%

850/940-nm VCSEL for optical communication and 3D sensing

Cheng¹,

Shen²,

Kao³

et al. 2018

Opto-Electronic Advances

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This paper is going to review the state-of-the-art of the high-speed 850/940-nm vertical cavity surface emitting laser (VCSEL), discussing the structural design, mode control and the related data transmission performance. InGaAs/AlGaAs multiple quantum well (MQW) was used to increase the differential gain and photon density in VCSEL. The multiple oxide layers and oxide-confined aperture were well designed in VCSEL to decrease the parasitic capacitance and generate single mode (SM) VCSEL. The maximal modulation bandwidth of 30 GHz was achieved with well-designed VCSEL structure. At the end of the paper, other applications of the near-infrared VCSELs are discussed.

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“…where R m , C T , R loss (f ) and C pad (f ) represent mirror total series resistance (R n + R p ), combined mesa capacitance (C j + C jo + C m ), polyimide dielectric loss and pad capacitance, respectively. In previously reported VCSEL circuit models used for parasitic parameter extraction [14,18,32], the frequency dependence of the material dielectric permittivity (ε r ) and R loss was ignored, and thus fixed values for C pad and R loss were used. Based on a study reported by the author and collaborators in [33], the functional dependence of ε r and R loss on frequency, which was approximated by a Gaussian function with fitting parameters, is included in the model presented here:…”

Section: Equivalent Circuit Analysis and Parameter Extractionmentioning

confidence: 99%

“…Measured and fitted data at other bias currents and for the 12 μm devices were omitted for clarity. The convergence of the fitting values to reasonable values was enhanced by assigning a range of initial values for R m , R LF , C p , C T and R d based on either previously reported values for similar structure and size or estimations from simple geometrical considerations [14,18,31,32]. Finally, all the circuit parameters were allowed to vary about these values to minimize the error.…”

Section: Equivalent Circuit Analysis and Parameter Extractionmentioning

confidence: 99%

Fabrication, performance and parasitic parameter extraction of 850 nm high-speed vertical-cavity lasers

Al-Omari¹,

AL-Kofahi²,

Lear³

2009

Semicond. Sci. Technol.

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High-speed, oxide-confined, polyimide-planarized 850 nm vertical-cavity surface emitting lasers (VCSELs) with different aperture sizes were fabricated and characterized. Comprehensive small signal measurements and analysis were conducted. The VCSELs exhibit intrinsic, parasitic and thermal maximum bandwidth limitations of 42.3 GHz, 21.5 GHz and 17.6 GHz, respectively. Devices with a 10 μm oxide aperture exhibited a maximum modulation bandwidth of 15.3 GHz, limited by thermal effects, and a modulation current efficiency factor (MCEF) of 9.2 GHz mA −1/2. A VCSEL equivalent circuit model which incorporates the frequency dependence of the polyimide dielectric permittivity and loss is presented. A genetic algorithm (GA) was utilized to extract the parasitic circuit elements from measured microwave reflection coefficients (S 11) over a frequency range of 50 MHz to 20 GHz for different device sizes at different bias currents. Good agreement between extracted and calculated parasitic circuit element values was obtained. Several modifications to the device's fabrication steps and structure are suggested to further improve the device's output power and modulation bandwidth.

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High speed (>13 GHz) modulation of 850 nm vertical cavity surface emitting lasers (VCSELs) with tapered oxide confined layer

Cited by 12 publications

References 8 publications

Improvement of modulation performance and bandwidth of a 980 nm strained In0.2Ga0.8As/GaAs QW VCSEL

Improvement of modulation performance and bandwidth of a 980 nm strained In0.2Ga0.8As/GaAs QW VCSEL

850/940-nm VCSEL for optical communication and 3D sensing

Fabrication, performance and parasitic parameter extraction of 850 nm high-speed vertical-cavity lasers

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