High-speed gallium-arsenide Schottky-barrier field-effect transistors

Electron dynamics in short channel field-effect transistors

“…Comparison with experiment is complicated by a lack of experimental data. However, it seems unlikely that the overshoot of the drift velocity alone can explain the high figure of merit [ 2 ] family of such curves, not presented here for economical reasons, can be used to make a choice of optimum electric fields to minimize the transit time of the electrons over a known distance between source and drain. I n conclusion, transient effects on the drift velocity of GaAs are important but probably not large enough t o explain the remarkable performance of GaAs FET's [ a ] .…”

“…l(b), GaAs exhibits a peak velocity prior to saturation. By a judicious choice of the bias field E ( 2 kV/cm <E < 5 kV/cm) the figure of merit fmax could be improved but not as drastically as experimental data [ 2 ] taken at an average field over 8 kV/cm seem to indicate.…”

Preferential Etching of GaAs Through Photoresist Masks

“…The materials examined have compositions near that of stoichiometric Li20"A1203"2SiO2, i.e., LiA1SiO~. Materials of this stoichiometry form the basis of the class of materials which, when in crystalline form, exhibit the /3-eucryptite structure (1)(2)(3)(4)(5)(6)(7)(8)(9)(10)(11). These materials are of interest for high temperature solid electrolyte applications ( 12), e.g., thermal batteries (13), because of the combined characteristics of low thermal expan-Key words: solid electrolytes, lithium ion conductors, ionic conductivity, lithium aluminosilicate glass and glass-ceramic, fl-eueryptite structure.…”

Evolution and recent advances in RF/microwave transistors

“…One year later, a GaAs MESFET with f max of 3 GHz was reported [8]. In 1970, a GaAs MESFET with a record f max around 30 GHz was obtained [9], which clearly exceeded the performance of any other transistor type at that time, and in 1973 the 100 GHz f max mark was reached [10]. Both low-noise and power GaAs MESFETs became commercially available in the mid 1970s.…”