High‐Speed Flexible Organic Field‐Effect Transistors with a 3D Structure

Uno, Mayumi; Nakayama, Koji; Soeda, Junshi; Hirose, Yasuyuki; Miwa, Kenji; Uemura, Tomomasa; Nakao, Akiko; Takimiya, Kazuo; Takeya, Jun

doi:10.1002/adma.201101179

Cited by 57 publications

(33 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Response times in short channel three‐dimensional OFETs have been found to be ∼4 MHz . Printable OFETs with MHz frequency response at small channel lengths (200–300 nm) has also been observed .…”

Section: Resultsmentioning

confidence: 90%

Enhanced mobility and environmental stability in all organic field‐effect transistors: The role of high dipole moment solvent

Ukah

Senanayak

Adil

et al. 2013

J Polym Sci B Polym Phys

View full text Add to dashboard Cite

Low‐operating voltage, high mobility, and stable organic field‐effect transistors (OFETs) using polymeric dielectrics such as pristine poly(4‐vinyl phenol) (PVP) and poly(methyl methacrylate) (PMMA), dissolved in solvents of high dipole moment, have been achieved. High dipole moment solvents such as propylene carbonate and dimethyl sulfoxide used for dissolving the polymer dielectric enhance the charge carrier mobilities by three orders of magnitude in pentacene OFETs compared with low dipole moment solvents. Fast switching circuits with patterned gate PVP‐based pentacene OFETs demonstrated a switching frequency of 75 kHz at input voltages of |5 V|. The frequency response of the OFETs is attributed to a high degree of dipolar‐order in dielectric films obtained from high‐polarity solvents and the resulting energetically ordered landscape for transport. Remarkably, these pentacene‐based OFETs exhibited high stability under bias stress and in air with negligible shifts in the threshold voltage. © 2013 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2013, 51, 1533–1542

show abstract

Section: Resultsmentioning

confidence: 90%

Enhanced mobility and environmental stability in all organic field‐effect transistors: The role of high dipole moment solvent

Ukah

Senanayak

Adil

et al. 2013

J Polym Sci B Polym Phys

View full text Add to dashboard Cite

show abstract

“…Comparable results were obtained by Sokolov et al 6 using small molecules evaporated on polymer dielectrics in high vacuum. Uno et al 7 also used high-vacuum evaporation of an organic semiconductor on flexible substrates using parylene as a gate insulator to achieve vertical OFETs with m ¼ 0.15-0.2 cm 2 V À 1 s À 1 ). The key advantage of their transistor design was an interdigitated threedimensional structure, allowing for a high output current, but mechanical flexibility was moderate, with the smallest bending radius of B7 mm.…”

mentioning

confidence: 99%

Ultra-flexible solution-processed organic field-effect transistors

et al. 2012

View full text Add to dashboard Cite

Organic semiconductors might enable new applications in low-cost, light-weight, flexible electronics. To build a solid foundation for these technologies, more fundamental studies of electro-mechanical properties of various types of organic semiconductors are necessary. Here we perform basic studies of charge transport in highly crystalline solution-processed organic semiconductors as a function of applied mechanical strain. As a test bed, we use small molecules crystallized on thin plastic sheets, resulting in high-performance flexible field-effect transistors. These devices can be bent multiple times without degradation to a radius as small as B200 mm, demonstrating that crystalline solution-processed organic semiconductors are intrinsically highly flexible. This study of electro-mechanical properties suggests that solution-processable organic semiconductors are suitable for applications in flexible electronics, provided that integration with other important technological advances, such as device scalability and low-voltage operation, is achieved in the future.

show abstract

“…Vertical organic field‐effect transistor designs: a) Top‐gate step‐edge VOFET as proposed by Stutzmann et al and Parashkov et al, b) bottom‐gate step‐edge VOFET described by Uno et al and Kudo et al, and c) stacked bottom‐gate pseudo‐VOFET with additional insulator between source and drain electrodes as employed by Nakamura et al and Kleemann et al…”

Section: Overview Over Device Principles and State‐of‐the‐artmentioning

confidence: 99%

A Review of Vertical Organic Transistors

Kleemann

Krechan

Fischer

et al. 2020

Adv Funct Materials

120

110

View full text Add to dashboard Cite

Powerful electronic devices require performant short‐channel transistors. For organic electronics, though, promising low‐cost and flexible electronic circuits, high processing costs for short channel devices are not acceptable. In this regard, vertical organic transistors (VOTs) are an attractive alternative, and in fact, today they reach the highest transition frequency (40 MHz) and the highest footprint current density (>1 MA cm−2) among all organic transistors. Here, all VOT concepts are reviewed, while discussing device physics, integration approaches, and highlighting the recent developments. The upcoming challenges for the VOT technology are also presented with a guideline for further developments.

show abstract

High‐Speed Flexible Organic Field‐Effect Transistors with a 3D Structure

Cited by 57 publications

References 24 publications

Enhanced mobility and environmental stability in all organic field‐effect transistors: The role of high dipole moment solvent

Enhanced mobility and environmental stability in all organic field‐effect transistors: The role of high dipole moment solvent

Ultra-flexible solution-processed organic field-effect transistors

A Review of Vertical Organic Transistors

Contact Info

Product

Resources

About