High-Speed Fabrication of Laser Doping Selective Emitter Solar Cells Using 532nm Continuous Wave (CW) and Modelocked Quasi-CW Laser Sources

Patel, Raj; Wenham, Stuart; Tjahjono, Budi; Hallam, Brett; Sugianto, Adeline; Bovatsek, Jim

doi:10.4229/26theupvsec2011-2ao.3.5

Cited by 2 publications

(1 citation statement)

References 7 publications

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“…Therefore, LD can be used for the fabrication of high-efficiency solar cells such as selective emitters and interdigitated back contact (IBC) solar cells at high speed as a single additional step. [9][10][11][12][13][14][15] Actually, LD has been applied to the fabrication of solar cells in many studies, such as IBC solar cells and passivated emitters with rear locally diffused (PERL) solar cells. 16,17) In our previous study, phosphorus silicate glass (PSG) formed by spin coating was used as a doping precursor because of its low cost and high throughput.…”

Section: Introductionmentioning

confidence: 99%

Surface polarity control to reinforce dopant adhesion in laser doping of textured silicon

Nishimura¹,

Okamura²,

Yamamoto³

et al. 2014

Jpn. J. Appl. Phys.

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Increasing energy conversion efficiency without any extra cost is required for crystalline silicon (c-Si) solar cells. Laser doping (LD) can meet these requirements because it can be performed in an ambient atmosphere at room temperature. In this study, spin-coated phosphorus silicate glass (PSG) was formed on textured c-Si as a precursor for LD. We found that after LD, the reinforcement of the interface between PSG and the Si surface improved the photovoltaic characteristics V oc and J sc. The interface was reinforced by changing the c-Si surface from hydrophobic to hydrophilic before spin coating. The reinforced interface led to a reduction in the number of surface voids and an enhancement of the transfer of dopant atoms.

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