High-Speed Current Switching of Inverted-Staggered Bottom-Gate a-IGZO-Based Thin-Film Transistors with Highly Stable Logic Circuit Operations

Abstract

High-speed electronic (HSE) systems are an emerging technology with potential applications in various fields, including biomedical imaging devices, display systems, ultrasound detectors, and object recognition. This report presents a study on low-temperature processed inverted-staggered bottom-gate a-IGZO thin-film transistors (TFTs) for measuring fast current switching at higher frequencies. The IGZO TFT exhibits an excellent mobility of 10.51 cm 2 /(V•s) and a higher on/off ratio of 3.2 × 10 5 . Additionally, it displays highly stable and reliable gate-pulse switching at different frequencies ranging from 1 kHz to 0.2 MHz. Furthermore, logic operations such as inverter, NAND, and NOR gates were successfully performed using the enhancement-type device configuration. The results show stable and reliable voltage transfer responses with respect to the device configurations. Thus, this study not only enables the development of the applicability of the IGZO material in logic operations but also in HSE systems.

Low voltage-driven, high-performance TiO2 thin film transistors with MHz switching speed

“…Furthermore, the switching rise time and fall time can be dened as the time elapse when the switched-on current decays from 90% to 10% and vice versa in the transient time trace. 30,31 Since the rise time and fall time are both around 100 ns, the maximum switching speed is calculated to be around 5.0 MHz via the following equation…”

355 nm Nanosecond Ultraviolet Pulsed Laser Annealing Effects on Amorphous In-Ga-ZnO Thin Film Transistors

“…Metal-oxide semiconductors have garnered significant interest as core materials for next-generation displays, primarily owing to their low off-current and suitability for low-temperature processing. In particular, they can be deposited through low-temperature sputtering, a method that enhances process compatibility, leading to improved uniformity across large areas and heightened reliability over extended periods, as evidenced in several studies [ 1 , 2 , 3 , 4 , 5 , 6 ]. Amorphous indium-gallium-zinc oxide (a-IGZO) has been widely used as a channel material for thin-film transistors (TFTs) because of its moderate electron affinity, low threshold voltage, and high transmittance caused by its high-energy band gap [ 7 , 8 , 9 , 10 , 11 , 12 ].…”

355 nm Nanosecond Ultraviolet Pulsed Laser Annealing Effects on Amorphous In-Ga-ZnO Thin Film Transistors

“…Metal-oxide semiconductors are of interest as core materials for next-generation displays owing to their advantages of low off-current and low-temperature processing. In particular, metal-oxide semiconductors are deposited by low-temperature sputtering, and process compatibility can result in better uniformity over a large area and higher reliability over a longer time [1][2][3][4][5][6]. Amorphous indium-gallium-zinc oxide (a-IGZO) has been widely used as a channel material for thin-film transistors (TFT) because of its moderate electron affinity, low threshold voltage, and high transmittance caused by its high-energy band gap [7][8][9][10][11][12].…”