High speed complex-coupled DFB laser at 1.3 µm

Chen, T.R.; Chen, P.C.; Ungar, J.; Bar‐Chaim, N.

doi:10.1049/el:19940742

Cited by 9 publications

(3 citation statements)

References 14 publications

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“…Similar results have been obtained by Chen et al [44] who used an airbridge contact configuration and a narrow mesa to reduce parasitic effects, resulting in a 3 dB bandwidth of 18 GHz in a DFB laser emitting at 1.3 μm. Their device also incorporated a Multi-Quantum-Well (MQW) structure which further enhances laser performance.…”

Section: Factors Limiting Modulation Frequencysupporting

confidence: 85%

Direct Modulation of Semiconductor Lasers

Hunsperger

2009

Integrated Optics

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Section: Factors Limiting Modulation Frequencysupporting

confidence: 85%

Direct Modulation of Semiconductor Lasers

Hunsperger

2009

Integrated Optics

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“…devices with a corrugated active region to provide gain coupling [25]; devices with a homogeneous active region and a separate grating layer to provide a carrier-dependent gain or loss coupling [3], [12], [14], [26]; devices with a homogeneous active region and a I…”

Section: A Arbitrary Grating Geometry Verse Mode Is Taken Asmentioning

confidence: 99%

Instabilities and nonlinear L-I characteristics in complex-coupled DFB lasers with antiphase gain and index gratings

Jonsson¹,

Lowery

Olesen³

et al. 1996

IEEE J. Quantum Electron.

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Complex-coupled DFB lasers can be designed to provide large bandwidths and low chirp by adjusting the strength and phase of their index and gain gratings. In this paper we develop a self-consistent method of calculating the coupling coefficient of complex-coupled DFB lasers with a corrugated active region. Basic geometrical and structural parameters are used as inputs to the model. We show that antiphase coupling implies lasing on the short-wavelength side of the Bragg wavelength which in turn leads to instabilities and/or nonlinearities in the light-current characteristic. The critical output power for onset of instabilities is typically in the order of a few milliwatts. Timedomain simulations are used to assess the potential effects of these instabilities on optical communication systems. We find that transitions from a state of equal output powers from the facets to a state of dramatically different output powers occur within a few nanoseconds of turn-on. The origin of these instabilities is explained using a simple physical model and possible ways of increasing the critical power for instabilities are discussed. For example, we clearly show that the critical power for instability increases when the carrier lifetime is decreased.

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“…There are several ways to realize these gain couplings: (1) loading of periodic absorption regions [ 1][2]- [6], (2) corrugating the active region [7]-[l l], (3) The advantage of the PEQW GC DFB approach is quite unique in mainly two aspects: (I) The truncation of QWs creates a carrier injection from the etched interface in the grating grove. This reduces the carrier transport time for holes in the p-side.…”

Section: Introductionmentioning

confidence: 99%