High-speed and low-power microring modulators for silicon photonics

Modulators in Silicon Photonics—Heterogenous Integration & and Beyond

“…Nevertheless their small footprint and high absorption will no doubt make them a subject of interest in the coming years. V π • L = ∼4 V•cm Si MRM [13] 30 NA >300 NA V π • L = ∼0.65 V•cm Si MRM [14] 128 50 >300 2.9-4.2 V π • L = 0.52 V•cm Si MRM [17] 25-44 35 >18 29 dB/cm NA Si MZM [31] 28-40 NA NA 6.5 dB/mm V π • L = 2 V•mm Si MZM [32] 52 NA NA 5 1.4-1.9 V/cm Si MZM [33] 60 27.7 NA 3.5 V π • L = 2 V•cm Si EAM [35] 4 GHz 1542-1558 nm NA 51 NA III-V Si MOS [36] NA NA NA NA V π • L = 0.11 V•cm III-V Si MOS [37] NA 100 expected NA 28 dB/cm V π • L = 0.12-0.17 V•cm III-V Si MRM [38] 38 GHz 50 NA NA V π • L = 0.059-0.064 V•cm III-V Si MZM [39] NA NA NA NA V π • L = 0.1 V•cm III-V Si EAM [ [69] 1 GHz NA >80 NA NA DLG on Si [70] 22 NA NA NA f max D dB /(V swing IL dB ) = 3.75 GHz/V DLG on Si [71] 35 GHz 1500-1640 nm 18 0.9 ER/IL = 2/0.9 LiNb0 3 on Si [74] 110 GHz NA NA 15 DC-V π = 9.4 V LN MZM [75] 100-112 * expected NA NA 2.5 V π = 5.1 V BTO MZM [77] 25 NA NA 5.8 dB/cm V π • L = 0.2 V•cm Plasmonic MZM [85] 100…”

“…Mach-Zehnder interferometric (MZI) and ring-based modulators have been reported [6][7][8] with speeds of 18 Gbps being attained under forward bias operation [9,10]. Reverse bias operation achieved 30 GHz of bandwidth [11][12][13]. Sun et al even demonstrates a reverse biased microring modulator (MRM) up to speeds of up to 128 Gb/s [14].…”

Development trends in silicon photonics

“…Modulation rates of 40 Gb/s or higher have been widely demonstrated in 2012, such as 50 Gb/s with the basic reverse-biased PN junction [12] , 40 Gb/s with PIPIN junction [13] , 50 Gb/s with forward-biased PIN junction [14] and so on. Microring is an efficient approach for low power modulator because of its compact size, for example 33 fJ/bit [15] at 20 Gb/s reported by IBM in 2011. Furthermore, advanced modulation formats is also a key technology for silicon modulator to increase the capacity of optical communication networks.…”

Hybrid Silicon Photonic Integrated Circuit Technology

“…Under forward bias, speeds of 18 Gb/s using pre-emphasis have been obtained [6], [7]. Under reverse bias, bandwidths up to 30 GHz were shown [8]- [10]. Strained germanium and silicon germanium are also compatible with the CMOS fabrication technology, and these materials further increase the possibilities.…”