Modulators in Silicon Photonics—Heterogenous Integration &amp; and Beyond

Mulcahy, Jack; Peters, Frank H.; Dai, Xiaoying

doi:10.3390/photonics9010040

Cited by 10 publications

(5 citation statements)

References 93 publications

(127 reference statements)

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“…Silicon laser light modulators based on the free carriers' plasma dispersion effect can achieve both phase and amplitude modulation in silicon photonics. 34 The change in the complex refractive index of silicon due to excess electrons or holes (free carriers) allows for wavelength-dependent modulation of phase and amplitude. 35 The refractive index of the crystalline silicon is responsible for converting a Gaussian-shaped laser beam to a flat-top beam.…”

Section: Resultsmentioning

confidence: 99%

Wavefront-enhanced laser-induced breakdown spectroscopy (WELIBS) utilizing a crystalline silicon wafer for a flat-top IR laser beam

Abdel-Harith,

El-Saeid,

Abdelazeem

et al. 2024

J. Anal. At. Spectrom.

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Section: Resultsmentioning

confidence: 99%

Wavefront-enhanced laser-induced breakdown spectroscopy (WELIBS) utilizing a crystalline silicon wafer for a flat-top IR laser beam

Abdel-Harith,

El-Saeid,

Abdelazeem

et al. 2024

J. Anal. At. Spectrom.

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“… is usually on the order of 1fF, is ~1 V, is typically 3.3 V, and is typically ~1 mA/mW at a wavelength of 1550 nm 40 , 41 . In addition, typical insertion loss for high-speed optical modulators is ~ 6.4 dB ( ) and the wall-plug efficiency for distributed feedback lasers is 42 , 43 The transmission through the experimental scattering medium is assumed to be which also takes into account coupling efficiency to the integrated photodetectors. To be specific, our scattering medium provides a transmission of 30% as shown in the Supplementary Information [Supplementary Information: Section S5 .…”

Section: Resultsmentioning

confidence: 99%

Integrated photonic encoder for low power and high-speed image processing

Wang,

Redding,

Karl

et al. 2024

Nat Commun

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Modern lens designs are capable of resolving greater than 10 gigapixels, while advances in camera frame-rate and hyperspectral imaging have made data acquisition rates of Terapixel/second a real possibility. The main bottlenecks preventing such high data-rate systems are power consumption and data storage. In this work, we show that analog photonic encoders could address this challenge, enabling high-speed image compression using orders-of-magnitude lower power than digital electronics. Our approach relies on a silicon-photonics front-end to compress raw image data, foregoing energy-intensive image conditioning and reducing data storage requirements. The compression scheme uses a passive disordered photonic structure to perform kernel-type random projections of the raw image data with minimal power consumption and low latency. A back-end neural network can then reconstruct the original images with structural similarity exceeding 90%. This scheme has the potential to process data streams exceeding Terapixel/second using less than 100 fJ/pixel, providing a path to ultra-high-resolution data and image acquisition systems.

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“…Si photonics is an attractive platform for PICs in numerous emerging applications due to its unique advantages, such as low cost, large integration density, and mature manufacturing processes [1,2]. Key devices such as lasers, modulators, and PDs have been demonstrated with impressive performances in commercial Si photonic platforms [3][4][5]. Among the key components in Si photonics, PDs play an important role in converting optical signals into electrical ones, thus connecting PICs with ICs.…”

Section: Introductionmentioning

confidence: 99%

Recent Progress in III–V Photodetectors Grown on Silicon

Zeng

Jin

et al. 2023

Photonics

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An efficient photodetector (PD) is a key component in silicon-based photonic integrated circuits (PICs). III–V PDs with low dark current density, large bandwidth, and wide operation wavelength range have become increasingly important for Si photonics in various applications. Monolithic integration of III–V PDs on Si by direct heteroepitaxy exhibits the lowest cost, the largest integration density, and the highest throughput. As the research of integrating III–V lasers on Si flourishes in the last decade, various types of III–V PDs on Si with different device structures and absorption materials have also been developed. While the integration of III–V lasers on Si using various technologies has been systematically reviewed, there are few reviews of integrating III–V PDs on Si. In this article, we review the most recent advances in III–V PDs directly grown on Si using two different epitaxial techniques: blanket heteroepitaxy and selective heteroepitaxy.

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Modulators in Silicon Photonics—Heterogenous Integration & and Beyond

Cited by 10 publications

References 93 publications

Wavefront-enhanced laser-induced breakdown spectroscopy (WELIBS) utilizing a crystalline silicon wafer for a flat-top IR laser beam

Wavefront-enhanced laser-induced breakdown spectroscopy (WELIBS) utilizing a crystalline silicon wafer for a flat-top IR laser beam

Integrated photonic encoder for low power and high-speed image processing

Recent Progress in III–V Photodetectors Grown on Silicon

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