High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide

Vivien, Laurent; Rouvière, Mathieu; Fédéli, Jean-Marc; Marris‐Morini, Delphine; Damlencourt, J.-F.; Mangeney, J.; Crozat, P.; Melhaoui, L. El; Cassan, Éric; Roux, Xavier Le; Pascal, D.; Laval, S.

doi:10.1364/oe.15.009843

Cited by 197 publications

(114 citation statements)

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“…1 While passive optical functions such as wavelength filters 2, 3 and active optical functions such as light modulation 4 can be realized in silicon, light detection, amplification, and emission require other materials to be integrated on the SOI waveguide platform, i.e., III-V ͑Ref. 5͒ or germanium 6 for light detection and III-V material for light emission and amplification. 7,8 The high refractive index contrast between the silicon waveguide core ͑n = 3.45 at 1.55 m͒ and the SiO 2 cladding layer ͑n = 1.45 at 1.55 m͒ is ultimately exploited by using nanophotonic strip waveguides, which are defined by completely etching through a / 2n thick silicon waveguide layer.…”

Section: Introductionmentioning

confidence: 99%

Light emission and enhanced nonlinearity in nanophotonic waveguide circuits by III–V/silicon-on-insulator heterogeneous integration

Roelkens

Liu

Thourhout

et al. 2008

Journal of Applied Physics

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The heterogeneous integration of a III-V thin film on top of a silicon-on-insulator ͑SOI͒ optical waveguide circuit by means of adhesive divinylsiloxane-benzocyclobutene ͑DVS-BCB͒ die-to-wafer bonding is demonstrated, thereby achieving light emission and enhanced nonlinearity in ultracompact SOI cavities. This approach requires ultrathin DVS-BCB bonding layers to allow the highly confined optical mode to overlap with the bonded III-V film. The transfer of sub-100-nm III-V layers using a 65 nm DVS-BCB bonding layer onto SOI racetrack resonator structures is demonstrated. Spontaneous emission coupled to a SOI bus waveguide, spectrally centered around the resonator resonances, is observed by optically pumping the III-V layer. Strong carrier-induced nonlinearities are observed in the transmission characteristics of the III-V/SOI resonator structure. The all-optical control of an optical signal in these III-V/SOI resonators is demonstrated.

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Section: Introductionmentioning

confidence: 99%

Light emission and enhanced nonlinearity in nanophotonic waveguide circuits by III–V/silicon-on-insulator heterogeneous integration

Roelkens

Liu

Thourhout

et al. 2008

Journal of Applied Physics

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“…In 2007, high-performance germanium detectors integrated into silicon waveguides were reported by various groups [39][40][41]. Longer absorption lengths and much smaller devices could be realized by waveguide integration, leading to higher quantum effi ciency, higher bandwidth and lower dark current.…”

Section: Integrated Silicon Photodetectorsmentioning

confidence: 99%

Device engineering for silicon photonics

Chen

Tsang

2011

NPG Asia Mater

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A fter an impressive initial spurt of progress in device engineering during the early 2000s when the optical communications industry saw unprecedented levels of investment, silicon photonics continues to develop at an amazing pace. Many novel applications and devices are emerging. Silicon photonics has the potential to become a major platform for optoelectronic integrated circuits (OEICs) and to be used in high-speed optical interconnects for chip-level data communications because of the extremely large bandwidth and high speed off ered by optical communications. Many challenges have been addressed through the introduction of innovative ideas, paving the way for the practical deployment of silicon-based optoelectronic devices and integrated photonic circuits in computing and telecommunication systems [1]. Th e commercialization of silicon photonics, originally driven by applications in telecommunications, is now also driven by the needs of the computing industry for highspeed, energy-effi cient optical cable technology, such as the Light Peak Technology under development by Intel (USA). Th e California-based company Luxtera (USA) has also commercialized a series of siliconphotonic transceiver systems.Silicon off ers many advantages over alternative material systems (e.g. InP, GaAs, LiNbO 3 ) for OEIC applications. One major reason for the wide interest that silicon photonics is attracting is the cost advantage that silicon photonics can potentially off er through its compatibility with the complementary metal-oxide-semiconductor (CMOS) fabrication processes used in the microelectronics industry. Th e huge investments that have been made in CMOS microelectronics fabrication technologies has resulted in processes that off er much higher yield than is possible using alternative materials for photonics, thus making feasible large-scale integration and the production of silicon-photonic devices that are monolithically integrated with not only optical components but also electronic circuits in the same platform at ultrahigh density. Another reason for the attractiveness of silicon photonics is the high refractive index contrast between the silicon core (refractive index, 3.48) and silicon dioxide cladding (refractive index, 1.45) in silicon-on-insulator (SOI) devices, which ensures the submicrometer confi nement of light and allows tight bending in optical waveguides. Th e high-density integration of photonic circuits on SOI platforms is thus feasible. Th e low cost of high-quality SOI wafers is another advantage of silicon photonics. All kinds of low-cost devices enabled by silicon photonics are therefore predicted, and these may also enjoy the other benefi ts of monolithic integration: smaller size, increased power effi ciency and improved reliability. Figure 1 shows an example of a high-density integrated photonics devices fabricated on a 6-inch SOI wafer using CMOS-compatible technology.In this article, we review some of the exciting progress that has been made in silicon photonics with the aim of providing a broa...

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“…Most optical components required in an LDV have been realized on this platform, e.g. low loss optical waveguides [8], high speed phase modulators [9], high speed photo-detectors [10], adhesive bonded distributed-feedback (DFB) lasers [11], and integrated optical isolators [12]. Thanks to the small bend radius of the optical waveguide and the weak bend loss of the guided mode (typically 0.03 dB/90 • for a bend with 2 µm radius [8]) on this SOI platform, the size of the PIC based LDV can be dramatically lower than that of more conventional implementations.…”

Section: Introductionmentioning

confidence: 99%

Homodyne laser Doppler vibrometer on silicon-on-insulator with integrated 90 degree optical hybrids

Li¹,

Baets²

2013

Opt. Express

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Abstract:A miniaturized homodyne laser Doppler vibrometer (LDV) with a compact 90 • optical hybrid is experimentally demonstrated on a CMOS compatible silicon-on-insulator (SOI) platform. Optical components on this platform usually have inadequate suppressions of spurious reflections, which significantly influence the performance of the LDV. Numerical compensation methods are implemented to effectively decrease the impact of these spurious reflections. With the help of these compensation methods, measurements for both super-half-wavelength and sub-half-wavelength vibrations are demonstrated. Results show that the minimal detectable velocity is around 1.2 µm/s.

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High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide

Cited by 197 publications

References 3 publications

Light emission and enhanced nonlinearity in nanophotonic waveguide circuits by III–V/silicon-on-insulator heterogeneous integration

Light emission and enhanced nonlinearity in nanophotonic waveguide circuits by III–V/silicon-on-insulator heterogeneous integration

Device engineering for silicon photonics

Homodyne laser Doppler vibrometer on silicon-on-insulator with integrated 90 degree optical hybrids

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