2000
DOI: 10.1016/s0920-5489(00)00038-6
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High-speed ADC systems with HBTs for measuring instrument applications

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Cited by 2 publications
(1 citation statement)
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“…The use of CC input stages is therefore proposed to reduce the input capacitance of the C-H comparator stages. The 130-nm silicon-germanium (SiGe) bipolar complementary metal–oxide–semiconductor (BiCMOS) process from IBM was selected owing to the high f t values of the heterojunction bipolar transistors (HBTs) and the use thereof in high-speed ADCs (Kobayashi et al , 2000). Section 2 describes the theory and conceptual design choices for the ADC design.…”
Section: Introductionmentioning
confidence: 99%
“…The use of CC input stages is therefore proposed to reduce the input capacitance of the C-H comparator stages. The 130-nm silicon-germanium (SiGe) bipolar complementary metal–oxide–semiconductor (BiCMOS) process from IBM was selected owing to the high f t values of the heterojunction bipolar transistors (HBTs) and the use thereof in high-speed ADCs (Kobayashi et al , 2000). Section 2 describes the theory and conceptual design choices for the ADC design.…”
Section: Introductionmentioning
confidence: 99%