High speed 1.3 [micro sign]m VCSELs for 12.5 Gbit/s optical interconnects

Ortsiefer, M.; Hofmann, Werner; Rönneberg, E.; Boletti, Anna; Gatto, Alberto; Boffi, Pierpaolo; Rosskopf, J.; Shau, R.; Neumeyr, Christian; Böhm, G.; Martinelli, Mario; Amann, M.-C.

doi:10.1049/el:20081591

Cited by 20 publications

(4 citation statements)

References 3 publications

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“…Equation 1gives the parasitic roll-off frequency f par of this circuit with Z 50Ω as impedance of the driver. Even with a slightly higher series resistance R m , the reduction in C a causes a much better parasitic roll-off [7,9], as R a rather than R m contributes directly to the parasitic time constant. Fig.…”

Section: Structurementioning

confidence: 99%

“…High-speed VCSELs with data-rates in excess of 20 Gb/s have been demonstrated recently in the 850-nm wavelength regime [1,2]. As the waveband around 850 nm is only suitable for short-reach interconnects, many efforts have been made to develop long-wavelength, high-speed VCSELs for metro-range links [3][4][5][6][7]. For the long-wavelength regime, approaches incorporating wafer-fusion [3], GaInNAs-based quantum-wells [4] or monolithic approaches on InP [5][6][7] have shown promising results with data-rates of 10-Gb/s.…”

Section: Introductionmentioning

confidence: 99%

“…As the waveband around 850 nm is only suitable for short-reach interconnects, many efforts have been made to develop long-wavelength, high-speed VCSELs for metro-range links [3][4][5][6][7]. For the long-wavelength regime, approaches incorporating wafer-fusion [3], GaInNAs-based quantum-wells [4] or monolithic approaches on InP [5][6][7] have shown promising results with data-rates of 10-Gb/s. The incorporation of a buried tunnel-junction (BTJ), enabling the replacement of p-by n-conducting material with lower electrical and optical losses, seems to be mandatory to achieve reasonable high-speed or high-temperature performance.…”

Section: Introductionmentioning

confidence: 99%

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22-Gb/s Long Wavelength VCSELs

Hofmann¹,

Müller²,

Nadtochiy³

et al. 2009

Opt. Express

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1.55-microm vertical cavity surface-emitting low-parasitic lasers show open eyes up to 22-Gb/s modulation speed. Uncooled error-free operation over a wide temperature range up to 85 degrees C under constant bias conditions is demonstrated at 12.5-Gb/s data rate. At these fixed bias conditions the laser characteristics are practically invariant with temperature. These are the highest data-rates reported from a long-wavelength VCSEL structure to date.

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Section: Structurementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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22-Gb/s Long Wavelength VCSELs

Hofmann¹,

Müller²,

Nadtochiy³

et al. 2009

Opt. Express

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“…1,2 Low resistance ohmic contacts are important for high frequency applications of InP-based heterojunction bipolar transistors (HBTs) and high electron mobility transistors. In these heterostructure devices and circuits, it is necessary to make ohmic contacts to the wide bandgap InAlAs through InGaAs and ultimately the narrow bandgap InAs, 3 especially for small devices where most of the surface area of the devices and circuits are covered with dielectrics.…”

Section: Introductionmentioning

confidence: 99%

Selective area growth of InAs on InP with dielectric mask

Chou

Torfi

Wang

2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Low resistance ohmic contacts are important for high frequency applications of InP-based heterojunction bipolar transistors and high electron mobility transistors. In this paper, the authors investigate the use of an InAs layer as the low-resistance ohmic contact to these heterostructure devices. Selective area crystal growth of InAs on a dielectric [benzocyclobutene (BCB) polymer] covered InP(100) was carried out by molecular beam epitaxy (MBE). Additionally, direct growth of InAs on InP substrates was performed to allow comparisons with InAs grown on BCB-covered InP. Different growth temperatures were tested to optimize the crystal quality of the InAs layer, which was characterized by scanning electron microscope and x-ray diffraction. Heavy doping of InAs using Te was carried out to determine the lowest sheet resistance. As the substrate temperature was increased from 210 to 350 °C, the crystallinity improved from a polycrystal layer to a single crystal layer with corresponding improvement of surface morphology. Moreover, sharp x-ray diffraction indicated the 3.3% lattice-mismatch was fully relaxed without misorientation. However, a trade off was reached around 290 °C between crystallinity and optimized dopant incorporation of Te into InAs for lowest sheet resistance. The results indicate the potential of Te-doped InAs as emitter contact for high frequency devices by MBE.

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