High sensitivity ultrasonic sensor for hydrophone applications, using an epitaxial Pb(Zr,Ti)O3 film grown on SrRuO3/Pt/γ-Al2O3/Si

Ito, M.; Okada, Nagaya; Takabe, M.; Otonari, M.; Akai, Daisuke; Sawada, Kazuaki; Ishida, M.

doi:10.1016/j.sna.2008.01.014

Cited by 35 publications

(13 citation statements)

References 13 publications

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“…Piezoelectric materials are becoming increasingly significant because of their wide range of applications such as sensors, actuators, resonators, and vibration energy harvesters, which are key devices for wireless sensor networks. − In particular, film-based piezoelectric materials play a crucial role in piezoelectric microelectromechanical systems (MEMS), which are important components in mobile devices . Since its discovery 60 years ago, Pb(Zr, Ti)O 3 (PZT) has been one of the most widely used piezoelectric materials. , However, increased environmental awareness has led to the demand to reduce or restrict the use of harmful elements, as represented by the RoHS directive.…”

Section: Introductionmentioning

confidence: 99%

Large Piezoelectric Response in Lead-Free (Bi_0.5Na_0.5)TiO₃-Based Perovskite Thin Films by Ferroelastic Domain Switching: Beyond the Morphotropic Phase Boundary Paradigm

Shiraishi

Hasegawa

Ishihama

et al. 2021

ACS Appl. Mater. Interfaces

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Strong electromechanical coupling is observed in tetragonal Pb-free 0.7(Bi 0.5 Na 0.5 )-TiO 3 -0.3BaTiO 3 films, which is far from the morphotropic phase boundary, prepared by pulsed laser deposition on a Si substrate. The tensile strain induced during cooling causes in-plane polarization in an oriented film on a Si substrate, while an epitaxial film grown on a SrTiO 3 substrate exhibits out-ofplane polarization. S−E curve analysis reveals that the obtained piezoelectric coefficient for the film on the Si substrate (d 33,f ≈ 275 pm/V) is approximately eight times higher than that for the epitaxial film on the SrTiO 3 substrate (d 33,f ≈ 34 pm/V). In situ X-ray diffraction analysis confirms the occurrence of domain switching under an electric field from in-plane to out-of-plane polarization. An effective piezoelectric stress coefficient, e 31,eff , of ∼19 C/m 2 is obtained from a Si cantilever sample, which is the highest among the reported values for Pb-free piezoelectric films and is comparable to those for Pb-based films. The significant piezoelectric response produced by domain switching in the Pb-free materials with the composition far from the morphotropic phase boundary will expand future applications due to their both outstanding properties and environmental sustainability.

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Section: Introductionmentioning

confidence: 99%

Large Piezoelectric Response in Lead-Free (Bi_0.5Na_0.5)TiO₃-Based Perovskite Thin Films by Ferroelastic Domain Switching: Beyond the Morphotropic Phase Boundary Paradigm

Shiraishi

Hasegawa

Ishihama

et al. 2021

ACS Appl. Mater. Interfaces

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“…Piezoelectric materials play a vital role in various applications including sensors, actuators, resonators, and vibration energy harvesters, particularly in the rapidly developing field of micro-electromechanical systems (MEMS). − MEMS that use piezoelectric devices, also called piezoelectric MEMS, have advantages over their electrostatic and electromagnetic counterparts, such as a simple structure and small size. , To date, Pb-based piezoelectric materials, such as Pb(Zr,Ti)O 3 (PZT) and Pb(Mg 1/3 Nb 2/3 )O 3 –PbTiO 3 (PMN–PT), have been preferred because of their excellent piezoelectric properties. , However, environmental issues and stricter regulations such as the Restriction of Hazardous Substances (RoHS) directive have necessitated the development of alternative materials that do not contain toxic Pb. − In the context of next-generation smart electronics, robotics, and the Internet of Things (IoT), advances in Pb-free piezoelectric thin films are essential for addressing the requirements of high-performance, energy-efficient devices while aligning with sustainable development practices. − …”

Section: Introductionmentioning

confidence: 99%

Achieving High Piezoelectric Performance across a Wide Composition Range in Tetragonal (Bi,Na)TiO₃–BaTiO₃ Films for Micro-electromechanical Systems

Ishihama,

Shimizu,

Okamoto

et al. 2023

ACS Appl. Mater. Interfaces

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Tetragonal (1−x)(Bi,Na)TiO 3 −xBaTiO 3 films exhibit enhanced piezoelectric properties due to domain switching over a wide composition range. These properties were observed over a significantly wider composition range than the morphotropic phase boundary (MPB), which typically has a limited composition range of 1−2%. The polarization axis was found to be along the in-plane direction for the tetragonal composition range x = 0.06−1.0, attributed to the tensile thermal strain from the substrate during cooling after the film formation. A "two-step increase" in remanent polarization against an applied maximum electric field was observed at the high-field region due to the domain switching, and a very high piezoelectric response (effective d 33 value, denoted as d 33,f ) over 220 pm/V was achieved for a wide composition range of x = 0.2−0.5 with high tetragonality, exceeding previously reported values for bulk ceramics. Moreover, a transverse piezoelectric coefficient, e 31,f , of 19 C/m 2 measured using a cantilever structure was obtained for a composition range of at least 10 atom % (for both x = 0.2 and 0.3). This value is the highest reported for Pb-free piezoelectric thin films and is comparable to the best data for Pb-based thin films. Reversible domain switching eliminates the need for conventional MPB compositions, allowing an improvement in the piezoelectric properties over a wider composition range. This strategy could provide a guideline for the development of environmentally acceptable lead-free piezoelectric films with composition-insensitive piezoelectric performance to replace Pb-based materials with MPB composition, such as PZT.

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“…Recently, there has been increasing interest in PZT thick films ranging from 10 μm to 100 μm, which combine the performance approaching those of bulk ceramics with the easy system integration and miniature size scale. PZT thick films at this micro-scale are favourable for the micro-electromechanical systems (MEMS) applications such as micro-pumps [2], highfrequency ultrasonic sensors [3] and micro-energy harvesters [4] owing to its large driving power, wide frequency range and high sensitivity.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and characterisation of substrate-free PZT thick films

Wang

Shi

et al. 2018

Ceramics International

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High sensitivity ultrasonic sensor for hydrophone applications, using an epitaxial Pb(Zr,Ti)O3 film grown on SrRuO3/Pt/γ-Al2O3/Si

Cited by 35 publications

References 13 publications

Large Piezoelectric Response in Lead-Free (Bi_0.5Na_0.5)TiO₃-Based Perovskite Thin Films by Ferroelastic Domain Switching: Beyond the Morphotropic Phase Boundary Paradigm

Large Piezoelectric Response in Lead-Free (Bi_0.5Na_0.5)TiO₃-Based Perovskite Thin Films by Ferroelastic Domain Switching: Beyond the Morphotropic Phase Boundary Paradigm

Achieving High Piezoelectric Performance across a Wide Composition Range in Tetragonal (Bi,Na)TiO₃–BaTiO₃ Films for Micro-electromechanical Systems

Fabrication and characterisation of substrate-free PZT thick films

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High sensitivity ultrasonic sensor for hydrophone applications, using an epitaxial Pb(Zr,Ti)O3 film grown on SrRuO3/Pt/γ-Al2O3/Si

Cited by 35 publications

References 13 publications

Large Piezoelectric Response in Lead-Free (Bi0.5Na0.5)TiO3-Based Perovskite Thin Films by Ferroelastic Domain Switching: Beyond the Morphotropic Phase Boundary Paradigm

Large Piezoelectric Response in Lead-Free (Bi0.5Na0.5)TiO3-Based Perovskite Thin Films by Ferroelastic Domain Switching: Beyond the Morphotropic Phase Boundary Paradigm

Achieving High Piezoelectric Performance across a Wide Composition Range in Tetragonal (Bi,Na)TiO3–BaTiO3 Films for Micro-electromechanical Systems

Fabrication and characterisation of substrate-free PZT thick films

Contact Info

Product

Resources

About

Large Piezoelectric Response in Lead-Free (Bi_0.5Na_0.5)TiO₃-Based Perovskite Thin Films by Ferroelastic Domain Switching: Beyond the Morphotropic Phase Boundary Paradigm

Large Piezoelectric Response in Lead-Free (Bi_0.5Na_0.5)TiO₃-Based Perovskite Thin Films by Ferroelastic Domain Switching: Beyond the Morphotropic Phase Boundary Paradigm

Achieving High Piezoelectric Performance across a Wide Composition Range in Tetragonal (Bi,Na)TiO₃–BaTiO₃ Films for Micro-electromechanical Systems