High-sensitivity porous silicon photodetectors fabricated through rapid thermal oxidation and rapid thermal annealing

Lee, M.K.; Wang, Y.H.; Chu, Chi-Hsiang

doi:10.1109/3.644102

Cited by 43 publications

(27 citation statements)

References 9 publications

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“…Table 1 shows the ideality factor (Z) and the barrier height (eV) at different etching density. The values of the ideality factor are found to be around 4.6 to 2.3 at 15min etching time and different values of etching current density, (15,17,19, 21) mA/cm 2 . If the structure includes interface states, ideality factor becomes high, that accounts to the totality of Z of the individual rectifying junctions (i.e., the actual PSi/c-Si heterojunction and Schottky diodes at the Al/PSi or the two metal-semiconductor junctions (Al/PSi, p-Si/Al) of a diode preferably possess Ohmic features) thus resulting in the ideal factor to be higher than unity.…”

Section: C-v Characteristics Of Al/p-psi/p-si/al In Darkmentioning

confidence: 98%

“…It relates the etching current density-voltage features of Al/PSi/pSi/Al structure formed at 15min. It is of dissimilar etching current densities (15,17,19 and 21) mA/cm 2 in which the current-voltage graphs are attained by varying the applied bias (ranging from -10 V to +10 V). Then the resultant etching current density is measured.…”

Section: Electrical Properties Of Al / Psi / P-si /Almentioning

confidence: 99%

“…The schematic setup of electrochemical etching is depicted in figure 1. Sample prepared at different etching current density (15,17,19,21) …”

Section: Electrochemical Etching Processmentioning

confidence: 99%

“…We have studied the electrical and photoelectrical characteristics of Al/PSi/p-Si/Al structure apart from investigating the effect of structural parameters of the PSi layer on these properties. By considering all these factors, the PSi layers are prepared at different etching current density (15,17,19, 21)mA/cm 2 with constant etching time of 15min for p-type silicon. Figure A1 illustrates the Schottky or heterojunction behaviour.…”

Section: Electrical Properties Of Al / Psi / P-si /Almentioning

confidence: 99%

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Study of Electrical Properties of Photodetector

Mousa¹,

Nawfal²

2017

JEES

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In this paper porous silicon sample that can be used as a photodetector was prepared at fixed etching time of 15min and different etching current density (15, 17, 19 and 21) mA/cm 2 . Electrical properties of Al / PSi / p-Si /Al photodetector were studied. We found that the I-V characteristics dependence of the etching current density relates to the PSi pores development, where the pore diameter in PSi structure might get enlarged due to the enhancement of the etching current density. The ideality factor ranges around (6.8-4.2) while the barrier height decreased with the increasing etching current density and the etching time as the interface layer between PSi/c-Si has large amount of pinning. Then the C-V characteristics of the sandwich structure are described. When the etching current densities are increased, it reduces the capacitance of the PSi layer. It thus increases the thickness of the depletion region which in turn results in development of built-in potential.

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Section: C-v Characteristics Of Al/p-psi/p-si/al In Darkmentioning

confidence: 98%

Section: Electrical Properties Of Al / Psi / P-si /Almentioning

confidence: 99%

“…The schematic setup of electrochemical etching is depicted in figure 1. Sample prepared at different etching current density (15,17,19,21) …”

Section: Electrochemical Etching Processmentioning

confidence: 99%

Section: Electrical Properties Of Al / Psi / P-si /Almentioning

confidence: 99%

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Study of Electrical Properties of Photodetector

Mousa¹,

Nawfal²

2017

JEES

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“…rectification ratio meaning the ratio between forward current to the reverse Current, it for as prepared was equal to 5 ,With increase oxidation time the rectification ratio increase and reach to optimum value about 21 at oxidation time (30 sec). this increased in rectification factor is attributed to the formation a thin oxide layer between AL metal and Si [7] also attributed to formation of an isotope heteojunction ,after that time the rectification ratio will be decreased is due to the defect formed by the sympathize silicon-oxygen structure in a very thin oxide layer and they would act as tunneling center, for oxidation time is longer than (30 sec) the oxide layer is thicker the tunneling probability of photo carriers and the thermal generated carriers through the oxide layer are reduced and hence the dark current to reduced [8]. The oxide thickness is estimated by using equation for high resistivity n-type for silicon [9 ].…”

Section: Expeirmental Workmentioning

confidence: 99%

The Influence of Heating Treatment on Physical Properties of Porous Silicon

Alwan¹,

alzahra²

2009

JNUS

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Abstract:In this work we studying the effect of thermal treatment on the electrical and conduction properties of metal /porous silica /n-si /metal prepared by photo electro chemical etching for etching time (15 min. Oxidation occur in oxidation time (15-150)sec at 750Ċ.After investigated current-voltage (J-V)measurement we found increase in rectification ratio ,barrier height increase with oxidation time, the rectification ration was 5 before oxidation will be 21 after 30 s oxidation time, barrier height value was (0.756eV) will be( 0.85eV) at oxidation time 30 s ,the ideality factor after oxidation was 15 will be 2.75 at 30 sec of oxidation time mean that the device approach from the ideality characteristics.

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Metallic Nanoparticle Network for Photocurrent Generation and Photodetection

Xie

Gao

et al. 2009

Advanced Materials

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Metallic gold (Au) nanoparticles (NPs) are of great interest in nanoelectronics, optics, and biotechnology. [1] In particular, Au NPs exhibit surface plasmon resonance (SPR) [2] that is a result of the collective oscillation of conduction electrons induced by incident electromagnetic radiation. When the size of a metal particle is smaller than the wavelength of incident light, the extinction function is dominated by absorption rather than scattering.[3] Therefore, Au NPs exhibit enhanced photoabsorption in the UV-vis region. Indeed, the SPR characteristic of metallic NPs has been utilized for various applications including molecular sensing [4] and sub-wavelength photonics.[5]Photocurrent generation and photodetection are usually based on semiconductors such as Si and TiO 2 . [6,7] The semiconductor band-gap limits the conduction of intrinsic carriers, while the photoexcited electrons have sufficient energy for transport in the conduction band (CB), thus generating relatively large photocurrent. In a metal, however, there is large population of intrinsic electrons near the Fermi level. When a bias is applied, the number of intrinsic conduction electrons far exceeds that of photoelectrons, such that the intrinsic current is much larger than the photocurrent, rendering the detection of photocurrent impractical in current-voltage (I-V) measurements. This is why there has been almost no report in the literature on the usage of metallic NPs for photocurrent applications.[8] Most works [9][10][11][12] use the SPR behavior of Au NPs to enhance photoabsorption in semiconductors. For example, Au or Ag NPs are dispersed in a semiconductor TiO 2 matrix [9] or on Si [10][11][12] to improve the photon-electron conversion. It is hoped that the enhanced photoabsorption associated with Au NPs will trap more incident light and promote charge separation in the semiconductor. In such a scheme, the photoelectrons are still excited from the semiconductor, while the Au NPs act as an absorption-enhancing agent of the semiconductor. There is only one work briefly reporting the photoconductivity of Au NPs, but neither the detailed conduction mechanism nor the application of photodetection are discussed. [8] In this paper, we report the observation of photoexcitation and photocurrent generation directly from ligated metallic NPs instead of semiconductors. We show that Au-NP passivation by alkanethiol ligands significantly hinders the intrinsic electron conduction, thus increasing the relative ratio of photocurrent to intrinsic current, leading to the photoelectron-dominated current in the NP network. We also discuss the mechanism for photocurrent generation and conduction in the Au NP system, and demonstrate the applicability of metallic Au NPs for photodetection.We first present the observation of photocurrent generation in the Au-NP film prepared according to an early work.[13] A detailed description on the preparation and characterization of Au NPs is provided in the Supporting Information (see SI-i and ii). The right inset of Figure 1...

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High-sensitivity porous silicon photodetectors fabricated through rapid thermal oxidation and rapid thermal annealing

Cited by 43 publications

References 9 publications

Study of Electrical Properties of Photodetector

Study of Electrical Properties of Photodetector

The Influence of Heating Treatment on Physical Properties of Porous Silicon

Metallic Nanoparticle Network for Photocurrent Generation and Photodetection

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