The Influence of Heating Treatment on Physical Properties of Porous Silicon

Alwan, Alwan M.; alzahra, Narges Z. Abd

doi:10.22401/jnus.12.2.08

Cited by 2 publications

(1 citation statement)

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“…This process can lead to changes in the surface topography, such as the formation of re-solidified regions, which may exhibit different morphological features compared to the original surface; Surface Roughness Modification: Laser annealing can also influence the surface roughness of a material. The energy delivered by the laser can cause material ablation, vaporization, or rearrangement, leading to the smoothing or roughening of the surface [6]. The laser energy density, pulse duration, and repetition rate are crucial parameters that determine the extent of roughness modification; Surface Crystallization: In some cases, laser annealing can induce the recrystallization of the material's surface occurs when the laser energy is sufficient to heat the material above its recrystallization temperature, allowing the atoms or molecules to rearrange into a more ordered crystal structure.…”

Section: Introductionmentioning

confidence: 99%

Extraordinary Magnetoresistance of Laserannealed Nano Boron Depositedon Oxidized Porous Silicon

Abdulzahra¹

2023

Eurasian phys. tech. j.

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This study explores the impact of laser annealing on the electrical and magnetic properties of nano boron deposited on oxidized porous silicon (n-B/PSiO2) and its potential for spintronic applications. The Nd: YAG laser was used at varying energies to anneal the n-B thin films. Increasing the laser energy increased grain size and more ordered grain structures. It also increased surface roughness due to forming new grain boundaries and secondary phases. The electrical properties of the material were also affected by the laser annealing, with an increase in forward and reverse current and an increase in electrical resistivity with increased annealing temperature. The study also found that the magnetoresistance of the material increased with increasing laser temperature, attributed to tunnel injection through the thin silicon dioxide layer, and could be up to 7 times higher than non-annealed n-B/PSiO2in a magnetic field. The study highlights the importance of controlling materials’ grain size and structure for their physical and electrical properties. In addition, it provides insights into the electronic properties of n-B/PSiO2and the behavior of charge carriers in a magnetic field.

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Section: Introductionmentioning

confidence: 99%