Advances in Patterning Materials and Processes XXXVII 2020
DOI: 10.1117/12.2551476
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High sensitivity non-CAR resists for EUV and EB lithography

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“…In the case of polysaccharide resists, transfer of nanometer scale patterns in silicon using ICP-RIE was achieved with a hemicellulose resist 15 . Aspect ratio of almost 7 was achieved thanks to its 3.7 selectivity.…”
Section: Introductionmentioning
confidence: 99%
“…In the case of polysaccharide resists, transfer of nanometer scale patterns in silicon using ICP-RIE was achieved with a hemicellulose resist 15 . Aspect ratio of almost 7 was achieved thanks to its 3.7 selectivity.…”
Section: Introductionmentioning
confidence: 99%