High-sensitivity microwave power sensor for GaAs-MMIC implementation

Dehe, A.; Krozer, Viktor; Chen, B.; Hartnagel, H. L.

doi:10.1049/el:19961416

Cited by 71 publications

(33 citation statements)

References 3 publications

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“…The fabrication of the thermoelectric power sensor is divided into front side and back side processing based on a combination of surface and bulk micromachining of GaAs, which is compatible with GaAs MMIC process (Dehe et al 1996a(Dehe et al , 1996bLalinsky et al 1999) GaAs is chosen as the substrate material because of its lower thermal conductivity, higher saturation velocity and higher temperature (Shih and Blum 1972). The load resistor is made by using a lift-off process through depositing of a TaN layer with a square resistance of 25 X/ h. In order to realize the 50 X resistance values, two 100 X resistors are connected in parallel.…”

Section: Fabricationmentioning

confidence: 99%

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A voltage source model on thermoelectric power sensor based on MEMS technology

Wang

Liao

2011

Microsyst Technol

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In order to achieve monolithic integration of thermoelectric power sensor and its amplification system and improve the measurement accuracy of microwave power, a voltage source model is researched in this paper. And the thermoelectric power sensor is designed and fabricated using MEMS technology and GaAs MMIC process. It is measured in the X-band (8-12 GHz) with the input power in 100 mW range. When the input microwave power is at 10, 50 and 100 mW, respectively, the frequency dependent coefficient k 1 is -0.073, -0.39 and -0.82 mV/ GHz, respectively. The sensitivity coefficient k 2 is 0.311, 0.303, 0.293, 0.284 and 0.279 mV/mW at 8, 9, 10, 11 and 12 GHz, respectively, and has an excellent linearity. Based on the voltage source model, the feedback coefficient of its amplification system is set to 0.0078 9 P in to compensate the loss power caused by frequency dependent characteristic. In addition to miniaturization and low cost, an advantage using this model is significantly improved measurement accuracy.

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Section: Fabricationmentioning

confidence: 99%

“…Thermocouplebased power sensors have been one of the most widely used devices for microwave power measurement (Dehe et al 1996a, b;Kodato et al 1997). A major advantage of the thermoelectric conversion is its exact physical definition, inherent broad frequency range and digital display.…”

Section: Introductionmentioning

confidence: 99%

A voltage source model on thermoelectric power sensor based on MEMS technology

Wang

Liao

2011

Microsyst Technol

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show abstract

“…These advantages of the GaAs based power sensor have been demonstrated in the work of Dehe et al [3]. A concept of the power sensor was based on a thin (1.5 lm) undoped AlGaAs/GaAs membrane.…”

Section: Introductionmentioning

confidence: 97%

“…A concept of the power sensor was based on a thin (1.5 lm) undoped AlGaAs/GaAs membrane. NiCr thin film resistors were integrated as heaters and GaAs thermocouples as temperature sensors [3]. However, the presented sensor was principally only another approach to the classical principle of the passive heater scheme for the measurement of absorbed power.…”

Section: Introductionmentioning

confidence: 99%

Design and simulation of micromechanical thermal converter for RF power sensor microsystem

Jakovenko

Hušák

Lalinský

2004

Microelectronics Reliability

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“…an insertion power sensor [2], a capacitive power sensor [3], and coupling power sensors in our group [4], with the available RF signal during the power detection, but there is very little consideration of real applications. Currently, most of commercial power sensors are applied to microwave power meters as detection components like self-heating power sensors [5][6][7] and indirectly-heating power sensors [8][9][10], but they are termination devices compared with the inline sensors and the input RF signal is completely dissipated after the detection.…”

Section: Introductionmentioning

confidence: 99%