A voltage source model on thermoelectric power sensor based on MEMS technology

Abstract

In order to achieve monolithic integration of thermoelectric power sensor and its amplification system and improve the measurement accuracy of microwave power, a voltage source model is researched in this paper. And the thermoelectric power sensor is designed and fabricated using MEMS technology and GaAs MMIC process. It is measured in the X-band (8-12 GHz) with the input power in 100 mW range. When the input microwave power is at 10, 50 and 100 mW, respectively, the frequency dependent coefficient k 1 is -0.073, -0.39 and -0.82 mV/ GHz, respectively. The sensitivity coefficient k 2 is 0.311, 0.303, 0.293, 0.284 and 0.279 mV/mW at 8, 9, 10, 11 and 12 GHz, respectively, and has an excellent linearity. Based on the voltage source model, the feedback coefficient of its amplification system is set to 0.0078 9 P in to compensate the loss power caused by frequency dependent characteristic. In addition to miniaturization and low cost, an advantage using this model is significantly improved measurement accuracy.

Visual monitoring of laser power and spot profile in micron region by a single chip of Zn-doped CdS nanobelts

“…This means the device can be minimized and realized easily in all-optical integrated circuits. 16,17 Moreover, the analysis of the intensity distribution of laser focus is important for some nonlinear optical phenomena, such as two-photon absorption and subwavelength spatially resolved excitation. 18,19 However, to date, few results on nanostructure-related laser power monitoring have been mentioned, especially for the intensity distribution of laser focus in the micron region.…”

Research on a Ka‐Band MEMS Power Sensor Investigated with an MEMS Cantilever Beam

“…As can be observed from Eq. (14), there is a positive relationship between the overload power and the ration of length to thickness of the MEMS cantilever beam, while the capacitive-type sensitivity is inversely proportional to it. The small width and the long length of beam result in a considerable sensitivity at the expense of the deterioration of the overload power.…”

“…In our previous work, a novel MEMS double-channel microwave power sensor based on GaAs MMIC technology is proposed at X-band (8-12GHz) [13] . Afterwards, with a tradeoff consideration between the miniaturization and the high performance at 1-30GHz band, a reasonable microstructure dimension of the thermoelectric power sensor is obtained [14][15][16] , but the overload power is poor. The key sizes such as the length of thermopile, the number of thermopile, and the distance between thermopile and resistor has been researched experimentally [17] .…”

Design of Water Pressure Sensor Applied to the Eye Aqueous Humor Detection

“…MEMS pressure sensor is in the integration of a variety of fine processing technology, and application of the latest information technology [4]. MEMS-based integrated sensor has the advantages of low weight, small size, low cost, and easy production [5]. It is mainly used to measure the fluid or gas pressure sensing element, which main application of modern microelectronic technology, in particular crystalline silicon wafers up to produce strain resistance [6].…”