High sensitivity and quantitative magnetic field measurements at 600°C

Yamamura, Takuya; Nakamura, Dai; Higashiwaki, Masataka; Matsui, Toshiaki; Sandhu, Adarsh

doi:10.1063/1.2158693

Cited by 24 publications

(13 citation statements)

References 8 publications

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“…On sample 2, 30 nm of nickel (Ni) layer followed by 100 nm of gold (Au), is also deposited on top of a Ti/Al metal stack. The four layer metal stack of Ti/Al/ Ni/Au stack is more commonly used for good ohmic contacts to the 2DEG in AlGaN/GaN heterojunctions [25,32,42,50]. -5…”

Section: Metal Depositionmentioning

confidence: 99%

“…Existing commercial Hall sensors are mostly Si-based [43,44]; a few of them are thin-film based [45][46][47]. Though it is widely acknowledged in the literature that the 2DEG Hall sensors based on AlGaN/GaN heterostructures can provide stable sensitivity over a wide range of temperature [25,32,42,[48][49][50][51], and very few commercial sensors are 2DEG based [52,53]. These known commercial Hall sensors are also not based on AlGaN/GaN heterostructures.…”

Section: Introductionmentioning

confidence: 99%

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Hall‐effect sensors based on AlGaN/GaN heterojunctions on Si substrates for a wide temperature range

Kumar

Muralidharan

Narayanan

2021

IET Circuits, Devices & Syst

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The authors report experimental investigations on Hall sensors based on AlGaN/GaN heterojunctions grown on silicon 111 (Si 111) substrates. Realisation of two-dimensional electron gas-based Hall sensors on Si substrates can have the advantages of low cost and integrability with complementary metal-oxide semiconductor circuits. Design and fabrication of such Hall sensors and their characterisation over a wide temperature range of 75 to 500 K are reported. The authors experimentally investigate the temperature dependence of the transresistances, sheet resistance and current-related sensitivity (or gain) of such Hall sensors. The current-related sensitivity is shown to be reasonably constant over the complete temperature range and certain inevitable variations in current-related sensitivity can easily be compensated. The temperature dependence of the transresistance can be used for such compensation. The variation of the geometrical correction factor of the Hall sensor with the applied magnetic field strength and the operating temperature is also studied. The authors also demonstrate the possibility of realising Hall sensors with a high geometrical correction factor ( ≈0.97), which is practically insensitive to variations in temperature ( ≃2% from 75 to 500 K) and applied magnetic field, for applications such as in electromechanical devices.This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

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Section: Metal Depositionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Hall‐effect sensors based on AlGaN/GaN heterojunctions on Si substrates for a wide temperature range

Kumar

Muralidharan

Narayanan

2021

IET Circuits, Devices & Syst

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“…SHPM technique offers various advantages and complements the other magnetic imaging methods like Scanning Superconducting Quantum Interference Device Microscopy (SSM) (Kirtley and Wikswo, 1999), Magnetic Force Microscopy (MFM) (Martin and Wickramasinghe, 1987), Magnetic Near-Field Scanning Optical Microscopy (Betzig et al, 1992) and Kerr Microscopy (Schmidt and Hubert, 1986). However, there have been few reports on magnetic imaging with Hall sensors at hightemperature regime too (Yamamura et al, 2006;Akram et al, 2008). Scanning Hall Probe Microscopy (SHPM) has been demonstrated as a quantitative and non-invasive technique for imaging localized surface magnetic field fluctuations of ferromagnetic domains with high spatial and magnetic field resolution of ∼50 nm and 7 mG/Hz 1/2 at room temperature (Sandhu et al, 2004).…”

Section: Introductionmentioning

confidence: 99%

“…However, there have been few reports (Yamamura et al, 2006) on magnetic imaging with Hall sensors in the high-temperature regime. The main reason behind the unsuitability of SHPM at high temperatures is the use of compound semiconductors such as AlGaAs/GaAs and InSb for fabrication of Hall probes, which are unstable at elevated temperatures due to their narrow bandgap and physical degradation of the material.…”

Section: Introductionmentioning

confidence: 99%

Application of silicon micro hall sensors in variable temperature scanning hall probe microscopy (SHPM) using multiple feedback techniques

Akram¹

2018

Int. j. adv. appl. sci.

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A quest for a quantitative and noninvasive method for the measurement of local magnetic fields along with surface morphology with high spatial and field resolution at variable temperatures calls for a selection of suitable magnetic sensor and appropriate scanning system. Scanning Hall probe microscopy (SHPM) is one of the choices as it addresses the stated issues and complements the other magnetic imaging methods. Si-Hall sensors due to their compatibility with CMOS technology and controllability of its parameters makes it preferable compared to other compound semiconductors. However, there have been few reports on magnetic imaging with Si-Hall sensors at high-temperatures and the selection of best possible feedback mechanism for them has not been addressed. In this article, working temperature range and the impediments related to feedback (STM tracking or AFM tracking) configuration for Si-Hall sensors along with feasibility of switchable feedback tracking configuration has been investigated. Si-Hall sensors (~0.7μm × 0.7μm × 510nm) have been fabricated with integrated Gold tip for STM-feedback and were mounted on Quartz Tuning Fork (QTF) for AFM-feedback. Comparison of simultaneous scans of magnetic and topographic data for a Hard disc sample, illustrated that the Si-Hall sensors are capable of scanning with comparable quality of images as with AlGaAs-HP for low temperatures (down to LNT) using STM feedback and as GaN/AlGaN-HP for high temperatures up to 150oC using AFM feedback. Use of QTF with Si-HP provided an option to electronically switch the feedback configuration between STM and AFM without the need to change front end assembly.

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“…The SHPM technique offers various advantages and complements the other magnetic imaging methods like scanning superconducting quantum interference device microscopy (SSM) [2], magnetic force microscopy (MFM) [3], magnetic near field scanning optical microscopy [4], and Kerr microscopy [5]. However, there have been few reports [6], [7] on magnetic imaging with Hall sensors at the high temperature regime. The main reason behind the unsuitability of SHPM at high temperatures is the use of compound semiconductors such as AlGaAs/GaAs and InSb for fabrication of Hall probes, which are unstable at elevated temperatures due to their narrow bandgap and physical degradation of the materials.…”

Section: Introductionmentioning

confidence: 99%

Variable Temperature-Scanning Hall Probe Microscopy With GaN/AlGaN Two-Dimensional Electron Gas (2DEG) Micro Hall Sensors in 4.2–425 K Range Using Novel Quartz Tuning Fork AFM Feedback

2008

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In this paper, we present the fabrication and variable temperature (VT) operation of Hall sensors, based on GaN/AlGaN heterostructure with a two-dimensional electron gas (2DEG) as an active layer, integrated with quartz tuning fork (QTF) in atomic force-guided (AFM) scanning Hall probe microscopy (SHPM). Physical strength and a wide bandgap of GaN/AlGaN heterostructure makes it a better choice to be used for SHPM at elevated temperatures, compared to other compound semiconductors (AlGaAs/GaAs and InSb), which are unstable due to their narrower bandgap and physical degradation at high temperatures. GaN/AlGaN micro Hall probes were produced using optical lithography and reactive ion etching. The active area, Hall coefficient, carrier concentration, and series resistance of the Hall sensors were 1 1 m, 10 m/G at 4.2 K, 6.3 10 12 cm 2 and 12 k at room temperature and 7 m/G, 8.9 10 12 cm 2 and 24 k at 400 K, respectively. A novel method of AFM feedback using QTF has been adopted. This method provides an advantage over scanning tunneling-guided feedback, which limits the operation of SHPM the conductive samples and failure of feedback due to high leakage currents at high temperatures. Simultaneous scans of magnetic and topographic data at various pressures (from atmospheric pressure to high vacuum) from 4. to 425K will be presented for different samples to illustrate the capability of GaN/AlGaN Hall sensors in VT-SHPM.Index Terms-Atomic force microscopy (AFM), GaN/AlGaN heterostructure, Hall probe, quartz tuning fork (QTF), scanning Hall probe microscopy (SHPM).

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High sensitivity and quantitative magnetic field measurements at 600°C

Cited by 24 publications

References 8 publications

Hall‐effect sensors based on AlGaN/GaN heterojunctions on Si substrates for a wide temperature range

Hall‐effect sensors based on AlGaN/GaN heterojunctions on Si substrates for a wide temperature range

Application of silicon micro hall sensors in variable temperature scanning hall probe microscopy (SHPM) using multiple feedback techniques

Variable Temperature-Scanning Hall Probe Microscopy With GaN/AlGaN Two-Dimensional Electron Gas (2DEG) Micro Hall Sensors in 4.2–425 K Range Using Novel Quartz Tuning Fork AFM Feedback

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