High-Sensitivity and Fast-Response Graphene/Crystalline Silicon Schottky Junction-Based Near-IR Photodetectors

Lv, Peng; Zhang, Xiujuan; Zhang, Xiwei; Deng, Wei; Jie, Jiansheng

doi:10.1109/led.2013.2275169

Cited by 139 publications

(99 citation statements)

References 12 publications

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“…The pristine Gr/Si device exhibits the maximum R I around 140 mAW −1 for the incident light with wavelength ranging from 650 to 850 nm. After MoO 3 deposition, R I was significantly boosted for the wide spectrum from ultraviolet to near infrared, particularly by nearly three times to ≈400 mAW −1 for the wavelength around 750 nm, which is much larger than that of previous report . Furthermore, the MoO 3 modification enhanced the corresponding EQE by almost four times up to ≈80% for the visible light regime, as shown in Figure b, which is much larger than that of TFSA doped Gr/Si devices .…”

mentioning

confidence: 64%

“…Assuming that shot noise from the dark current mainly contributes to the total noise, the detectivity can be evaluated by the formula

D^{*} = J_{SC} S^{1 / 2} / P {(2 e I_{normalD})}^{1 / 2}

where S is the device area, and I D is the dark current at zero voltage. As presented in Figure c, the D * of Gr/Si photodetector remarkably increased from ≈9 × 10 11 to ≈5.4 × 10 12 Jones for λ ranging from 600 to 800 nm after MoO 3 decoration, which is one order of magnitude higher than that of the previous report . Figure d shows the photovoltage responsivity ( R V ) of pristine and MoO 3 modified Gr/Si photodetectors in open circuit mode as a function of light wavelength, where R V is defined by

R_{normalV} = V_{OC} / P S

.…”

mentioning

confidence: 71%

“…On the other hand, the photodetecting properties of such Gr/Si devices are rarely investigated. Lv et al reported the Gr/Si junction based near‐IR photodetectors which however suffered from low responsivity, external quantum efficiency (EQE), and detectivity . In order to further enhance the performance of Gr/Si self‐powered photodetectors, it is of great importance to effectively modulate the Schottky barrier between graphene and silicon.…”

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confidence: 99%

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Surface Transfer Doping‐Induced, High‐Performance Graphene/Silicon Schottky Junction‐Based, Self‐Powered Photodetector

Han

et al. 2015

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107

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The last decade has seen a rapid expansion in the research on 2D materials in the form of ultrathin sheets extracted from layered materials. It all started with the isolation of graphene, a single sheet of graphite in 2004. For a while, graphene was the only such 2D material under study due to some of its fantastic properties such as high charge carrier mobility and mechanical strength. Yet graphene did not have a band gap, resulting in graphene transistors that were difficult to turn off and limiting its applications in electronics. The realisation that high-quality electronic devices could be made with MoS 2 , a semiconducting 2D material from the transition metal dichalcogenide family opened the field to a wide variety of materials, such as MoS 2 , WSe 2 , NbSe 2 and others rediscovered in the form of 2D sheets. Their wide range of electronic properties, spanning the range from semiconducting to superconducting extended the library of 2D materials further together with other rising stars in the 2D field-phosphorene and silicone being examples. Behind all the excitement for 2D materials are their potential applications, enabled by a combination of small thickness, usually high mechanical strength, reasonable carrier mobilities and the presence of a direct band gap in most semiconducting 2D materials. Some examples are in electronics and optoelectronics where small thickness and the presence of direct band gap allow the fabrication of low-power transistors, sensitive field-effect transistor-based biosensors and flexible electronic, and optoelec-tronic devices and systems. These promises have motivated large-scale collaborations in Europe, China, the USA, and other countries. And yet, we have barely scratched the surface. Just in the family of transition metal dichalcogenides, there are around 40 stable materials. Adding layered oxides, monochalcogenides, trichalco-genides etc. quickly raises this number to several hundred, while theoretical predictions indicate that there could be over a thousand layered materials that could be thinned down to single sheets. Not only single materials are interesting: stacking them in vertical direction in different arrangements results in heterostruc-tures with properties that are not seen in individual components. The sheer number of material combinations is mind-boggling and will keep us busy for decades to come. Exploring this vast landscape will require an interdisciplinary effort: theoretical modelling to identify interesting materials, and heterostructures and narrow down the choices; synthesis for making new materials a reality, basic research for discovering their intrinsic properties and engineering to turn them into useful concepts. To sustain this research effort over longer time periods and create a virtuous circle of funding, we also need to demonstrate and develop new applications of 2D materials. The initial work in the field was driven by the anticipated breakdown of Moore's law for silicon electronics as the feature size is decreased. Yet, as we learn more and ...

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confidence: 64%

“…Assuming that shot noise from the dark current mainly contributes to the total noise, the detectivity can be evaluated by the formula

D^{*} = J_{SC} S^{1 / 2} / P {(2 e I_{normalD})}^{1 / 2}

R_{normalV} = V_{OC} / P S

.…”

mentioning

confidence: 71%

mentioning

confidence: 99%

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Surface Transfer Doping‐Induced, High‐Performance Graphene/Silicon Schottky Junction‐Based, Self‐Powered Photodetector

Han

et al. 2015

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107

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“…The Schottky junction photodetector exhibits significant photovoltaic characteristics with 51.8 mA W −1 optical responsivity and 2 × 10 4 light on/off ratio at zero bias. Subsequently, an infrared Schottky junction photodetector based on a graphene/Si Schottky junction was constructed by combining a single layer of graphene (MLG) film and fast bulk silicon . It is worth noting that due to the strong photovoltaic characteristics and built‐in electric field of the MLG/Si Schottky junction, the photodetector can achieve self‐powered photodetector behavior without external voltage bias.…”

Section: D Material‐based Schottky Junction Photodetectorsmentioning

confidence: 99%

Self‐Powered Photodetectors Based on 2D Materials

Qiao

Huang

Ren

et al. 2019

Advanced Optical Materials

268

224

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Self‐powered photodetectors are considered as a new type of photodetectors enabling self‐powered photodetection without external power. The excellent photoresponsivity, fast photoresponse rate, low dark current, and large light on/off ratio of these photodetectors have attracted wide interest among scholars. 2D materials are widely used in self‐powered photodetectors due to their excellent optical and electrical properties, unique 2D structures, and their capabilities to exhibit excellent photodetection performance. According to the self‐driving mechanism of 2D material‐based self‐powered photodetectors, they are divided into three categories: p–n junction photodetectors, Schottky junction photodetectors, and photoelectrochemical photodetectors. From these three perspectives, the research progress of 2D material‐based self‐powered photodetectors is summarized in detail here. Research reports indicate that 2D material‐based self‐powered photodetectors have excellent self‐powered photoresponse behavior, good light on/off characteristics, and wideband spectral response ranges. The excellent photoresponse performance of 2D material‐based self‐powered photodetectors facilitates their potential applications in the field of optoelectronic devices. In particular, self‐powered photodetectors have great potential as novel emerging self‐driven optoelectronic devices. Finally, directions for the further development of 2D material‐based self‐powered photodetectors are anticipated.

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“…28 Graphene (Gr), a single-layer of carbon sheet, exhibits excellent electronic conductivity [29][30][31] and optical transmittance [32][33][34] with great potential to replace metals as transparent electrodes. [35][36][37][38][39][40][41][42] Gr/Si structures have been studied in solar cells, 36,38,39 as well as, visible and INR photodetectors, 41,[43][44][45][46][47][48] showing excellent performances. Ultra-shallow (essentially, zero X J ) Gr/Si Schottky structure could be more suitable for UV detection, because it not only resolves the serious surface recombination due to the shallow junction satisfying the UV light penetration depth in Si, but also simplifies the fabrication process to reduce the cost.…”

Section: Introductionmentioning

confidence: 99%

A self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon?

et al. 2017

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We present a self-powered, high-performance graphene-enhanced ultraviolet silicon Schottky photodetector. Different from traditional transparent electrodes, such as indium tin oxides or ultra-thin metals, the unique ultraviolet absorption property of graphene leads to long carrier life time of hot electrons that can contribute to the photocurrent or potential carrier-multiplication. Our proposed structure boosts the internal quantum efficiency over 100%, approaching the upper-limit of silicon-based ultraviolet photodetector. In the near-ultraviolet and mid-ultraviolet spectral region, the proposed ultraviolet photodetector exhibits high performance at zero-biasing (self-powered) mode, including high photo-responsivity (0.2 A W −1 ), fast time response (5 ns), high specific detectivity (1.6 × 10 13 Jones), and internal quantum efficiency greater than 100%. Further, the photo-responsivity is larger than 0.14 A W −1 in wavelength range from 200 to 400 nm, comparable to that of state-of-the-art Si, GaN, SiC Schottky photodetectors. The photodetectors exhibit stable operations in the ambient condition even 2 years after fabrication, showing great potential in practical applications, such as wearable devices, communication, and "dissipation-less" remote sensor networks.

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High-Sensitivity and Fast-Response Graphene/Crystalline Silicon Schottky Junction-Based Near-IR Photodetectors

Cited by 139 publications

References 12 publications

Surface Transfer Doping‐Induced, High‐Performance Graphene/Silicon Schottky Junction‐Based, Self‐Powered Photodetector

Surface Transfer Doping‐Induced, High‐Performance Graphene/Silicon Schottky Junction‐Based, Self‐Powered Photodetector

Self‐Powered Photodetectors Based on 2D Materials

A self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon?

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