High-sensitivity 10 Gbps Ge-on-Si photoreceiver operating at λ ~155 μm

Joo, Jiho; Kim, Sang-Hoon; Kim, In Gyoo; Jang, Ki‐Seok; Kim, Gyungock

doi:10.1364/oe.18.016474

Cited by 40 publications

(22 citation statements)

References 19 publications

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“…All measured diodes exhibited strong rectifying characteristics with low dark current densities. In particular, the dark current densities for 100 µm radius diodes at nominal bias of −1 V are ~5 mA/cm 2 (0.05 nA/µm 2 ), which are at least 2-3 times lower than Ge diodes grown with standard two-step growth [33][34][35]. The main root cause of leakage current in junction devices is the dislocations in the intrinsic region, which act as the generation and recombination centers for carriers.…”

Section: I-v Curvesmentioning

confidence: 99%

Strong Electro-Absorption in GeSi Epitaxy on Silicon-on-Insulator (SOI)

Luo

Zheng

et al. 2012

Micromachines

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Abstract:We have investigated the selective epitaxial growth of GeSi bulk material on silicon-on-insulator substrates by reduced pressure chemical vapor deposition. We employed AFM, SIMS, and Hall measurements, to characterize the GeSi heteroepitaxy quality. Optimal growth conditions have been identified to achieve low defect density, low RMS roughness with high selectivity and precise control of silicon content. Fabricated vertical p-i-n diodes exhibit very low dark current density of 5 mA/cm 2 at −1 V bias. Under a 7.5 V/µm E-field, GeSi alloys with 0.6% Si content demonstrate very strong electro-absorption with an estimated effective ∆α/α around 3.5 at 1,590 nm. We compared measured ∆α/α performance to that of bulk Ge. Optical modulation up to 40 GHz is observed in waveguide devices while small signal analysis indicates bandwidth is limited by device parasitics. OPEN ACCESSMicromachines 2012, 3 346

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Section: I-v Curvesmentioning

confidence: 99%

Strong Electro-Absorption in GeSi Epitaxy on Silicon-on-Insulator (SOI)

Luo

Zheng

et al. 2012

Micromachines

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“…Recently, there has been remarkable progress in Ge-on-Si photodetectors (Ge PDs) [14][15][16][17][18][19][20][21][22][23][24][25][26], which are the main active components in silicon optical receivers, and also in CMOS ICs for optical/electrical (O/E) interface and all-silicon photonic/CMOS receivers [6][7][8][9][28][29][30][31][32][33][34]. There have been reports on silicon photonic receivers where Ge waveguide (WG) PDs on SOI substrates and CMOS Rx ICs were monolithic-or hybrid-integrated [2,[28][29][30][31][32][33][34][35][36].…”

Section: Introductionmentioning

confidence: 99%

“…There have been reports on silicon photonic receivers where Ge waveguide (WG) PDs on SOI substrates and CMOS Rx ICs were monolithic-or hybrid-integrated [2,[28][29][30][31][32][33][34][35][36]. In general, most of reported Ge PDs are waveguide-type defined on SOI [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][25][26][27][28][29][30][31][32][33][34], whereas most of CMOS ICs are based on bulk silicon technology. On the other hand, vertical-illumination Ge PDs are defined on bulk silicon [6,9,22,[24][25][26], and are of interest since they can enable the monolithic integration with bulk CMOS ICs more realistic, and have a big advantage in packaging with optical fiber.…”

Section: Introductionmentioning

confidence: 99%

“…In general, most of reported Ge PDs are waveguide-type defined on SOI [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][25][26][27][28][29][30][31][32][33][34], whereas most of CMOS ICs are based on bulk silicon technology. On the other hand, vertical-illumination Ge PDs are defined on bulk silicon [6,9,22,[24][25][26], and are of interest since they can enable the monolithic integration with bulk CMOS ICs more realistic, and have a big advantage in packaging with optical fiber. However, it is rarely reported, since simultaneous achievement of both high-speed and high-responsivity characteristics in a vertical-illumination type PD is difficult due to the trade-off between responsivity and speed of the device [24][25][26].…”

Section: Introductionmentioning

confidence: 99%

“…25 Gb/s eye-diagram and (b) BER curves at data rate of 25 Gb/s and wavelength of 1310 nm for each channel of a photoreceiver.…”

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confidence: 99%

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100 Gb/s photoreceiver module based on 4ch × 25 Gb/s vertical-illumination-type Ge-on-Si photodetectors and amplifier circuits

et al. 2016

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We present the performance of 4-channel × 25 Gb/s all-silicon photonic receivers based on hybrid-integrated vertical Ge-on-bulk-silicon photodetectors with 65nm bulk CMOS front-end circuits, characterized over 100 Gb/s. The sensitivity of a single-channel Ge photoreceiver module at a BER = 10 -12 was measured -11 dBm at 25 Gb/s, whereas, the measured sensitivity of a 4-ch Ge photoreceiver was -10.06 ~ -10.9 dBm for 25Gb/s operation of each channel, and further improvement is in progress. For comparison, we will also present the performance of a 4-ch × 25 Gb/s photoreceiver module, where commercial InP HBT-based front-end circuits is used, characterized up to 100 Gb/s.

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Graphene‐Based Silicon Photonic Devices for Optical Interconnects

Wang,

Cai,

Jiang

et al. 2023

Adv Funct Materials

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The exponential growth of global data traffic is driven by the unprecedented digitalization of the world. To meet the demands of next‐generation high‐capacity data communication systems, innovative solutions are required. Silicon photonics has gained significant attention due to its ability to integrate multiple core functions of optical interconnects into small‐scale chips, offering cost‐effective and scalable manufacturing capabilities. By leveraging silicon photonics, it becomes possible to address the challenge of scaling system complexity while reducing size, cost, and energy consumption. Despite its advantages, silicon has inherent limitations that restrict its application range, such as the weak plasma dispersion effect and relatively large bandgap. Recently, graphene has emerged as a promising solution for traditional silicon photonics because of its exceptional electrical and optical properties. For instance, graphene on a silicon chip enables nearly pure phase modulation and ultrafast photodetection beyond 500 GHz. Moreover, the demonstrated compatibility of graphene with wafer‐level integration paves the way for mass production of graphene‐based silicon photonic devices, offering improved yield, scalability, and cost‐effectiveness. In this work, a comprehensive review is provided, focusing on graphene‐based silicon photonic devices and their applications in optical interconnects, aiming to explore the potential of graphene in advancing silicon photonic technology.

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High-sensitivity 10 Gbps Ge-on-Si photoreceiver operating at λ ~155 μm

Cited by 40 publications

References 19 publications

Strong Electro-Absorption in GeSi Epitaxy on Silicon-on-Insulator (SOI)

Strong Electro-Absorption in GeSi Epitaxy on Silicon-on-Insulator (SOI)

100 Gb/s photoreceiver module based on 4ch × 25 Gb/s vertical-illumination-type Ge-on-Si photodetectors and amplifier circuits

Graphene‐Based Silicon Photonic Devices for Optical Interconnects

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