Strong Electro-Absorption in GeSi Epitaxy on Silicon-on-Insulator (SOI)

Luo, Ying; Zheng, Xuezhe; Li, Guoliang; Shubin, Ivan; Thacker, Hiren; Yao, Jin; Lee, Jinhyoung; Feng, Dazeng; Fong, Joan; Kung, Cheng-Chih; Liao, Shirong; Shafiiha, Roshanak; Asghari, Mehdi; Raj, Kannan; Krishnamoorthy, Ashok V.; Cunningham, J. E.

doi:10.3390/mi3020345

Cited by 20 publications

(11 citation statements)

References 35 publications

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“…Using the Franz-Keldysh (FK) effect in Ge or GeSi alloy, very short (∼50 μm) EA modulators have been demonstrated [63]- [67], with efficiency of ∼2 dB/V and speeds beyond 40 Gb/s. These devices typically have high waveguide loss (>0.1 dB/μm) caused by indirect-bandgap absorption and epitaxial material defects.…”

Section: Modulator Candidates In Simentioning

confidence: 99%

Ring Resonator Modulators in Silicon for Interchip Photonic Links

Krishnamoorthy

Shubin

et al. 2013

IEEE J. Select. Topics Quantum Electron.

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149

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Silicon photonics is the most promising pathway to achieve >10 Tb/s off-chip I/O bandwidth required by nextgeneration high-performance computing and switching systems. Ring resonator modulators offer the advantages of small footprint, low power, high efficiency, low loss, high speed, and CMOS compatibility for silicon photonic links. This paper presents an indepth discussion of practical microring modulators in silicon, covering their performance metrics, design tradeoffs, optimization, p-n junction geometries, complex ring configurations, and tuning solutions. Various demonstrated Si ring modulators are reviewed and potential future developments are briefly discussed.

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Section: Modulator Candidates In Simentioning

confidence: 99%

Ring Resonator Modulators in Silicon for Interchip Photonic Links

Krishnamoorthy

Shubin

et al. 2013

IEEE J. Select. Topics Quantum Electron.

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149

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“…65 Technically, this data is for a Si 0.006 Ge 0.994 alloy. [184]) and QCSE (data after [82]) electroabsorption. The FKE data is taken in a SiGe diode structure with a ~2μm thick depletion region with ~ 0.6% fractional Si content (so technically a Si 0.006 Ge 0.994 alloy) so as to shift the absorption edge slightly to shorter wavelengths from that of pure Ge.…”

Section: Electroabsorption Mechanisms and Approachesmentioning

confidence: 99%

Attojoule Optoelectronics for Low-Energy Information Processing and Communications

Miller

2017

J. Lightwave Technol.

570

406

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Optics offers unique opportunities for reducing energy in information processing and communications while simultaneously resolving the problem of interconnect bandwidth density inside machines. Such energy dissipation overall is now at environmentally significant levels; the source of that dissipation is progressively shifting from logic operations to interconnect energies. Without the prospect of substantial reduction in energy per bit communicated, we cannot continue the exponential growth of our use of information. The physics of optics and optoelectronics fundamentally addresses both interconnect energy and bandwidth density, and optics may be the only scalable solution to such problems. Here we summarize the corresponding background, status, opportunities, and research directions for optoelectronic technology and novel optics, including sub-femtojoule devices in waveguide and novel 2D array optical systems. We compare different approaches to low-energy optoelectronic output devices and their scaling, including lasers, modulators and LEDs, optical confinement approaches (such as resonators) to enhance effects, and the benefits of different material choices, including 2D materials and other quantum-confined structures. With such optoelectronic energy reductions, and the elimination of line charging dissipation by the use optical connections, the next major interconnect dissipations are in the electronic circuits for receiver amplifiers, timing recovery and multiplexing. We show we can address these through the integration of photodetectors to reduce or eliminate receiver circuit energies, free-space optics to eliminate the need for timing and multiplexing circuits (while also solving bandwidth density problems), and using optics generally to save power by running large synchronous systems. One target concept is interconnects from ~ 1 cm to ~ 10 m that have the same energy (~ 10fJ/bit) and simplicity as local electrical wires on chip.

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“…12 These components were designed with substitutional and vacancy defects on the 111 surface of 3C-SiC and 3C-GeSi, while both the materials [13][14][15][16] and the defects [17][18][19] can be produced experimentally. Although phononic waveguides and resonators have been studied in much larger scales, [20][21][22][23] this study 12 showed that they can be scaled down to the nanometer or even in the atomic dimensions.…”

Section: Introductionmentioning

confidence: 99%

Nanoscale Phononic Waveguides and Resonators on the 〈111〉 Surface of GeSi

Sgouros¹,

Sigalas²

2015

Journal of Surfaces and Interfaces of Materials

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By replacing germanium (Ge) atoms with silicon (Si) on the 111 surface of GeSi, one can create localized (surface) states, that can be used to create resonators (isolated defects) and waveguides (line defects), which are important components of nanoscale phononic interconnects. Using empirical potentials and molecular dynamics simulations, the propagation losses in such devices are studied as a function of the excitation frequency, temperature and geometry design. Such systems may be used as an additional way of data manipulation similar to the well-known electronic and optical communications.

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Strong Electro-Absorption in GeSi Epitaxy on Silicon-on-Insulator (SOI)

Cited by 20 publications

References 35 publications

Ring Resonator Modulators in Silicon for Interchip Photonic Links

Ring Resonator Modulators in Silicon for Interchip Photonic Links

Attojoule Optoelectronics for Low-Energy Information Processing and Communications

Nanoscale Phononic Waveguides and Resonators on the 〈111〉 Surface of GeSi

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