High-Robustness and Low-Capacitance Silicon-Controlled Rectifier for High-Speed I/O ESD Protection

Cui, Qiang; Salcedo, Javier A.; Parthasarathy, S.; Zhou, Yuanzhong; Liou, Juin J.; Hajjar, Jean-Jacques

doi:10.1109/led.2012.2233708

Cited by 41 publications

(15 citation statements)

References 7 publications

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“…Table 2 summarizes the electrical properties according to changes in design variables. are important because they affect the electrical characteristics and It2 of the circuit [15]. Carrier mobility at high temperatures increases the resistance value of the N well and well regions and results in a lower holding current.…”

Section: Tablementioning

confidence: 99%

A New Dual-Direction SCR With High Holding Voltage and Low Dynamic Resistance for 5 V Application

Lee

Koo

2019

IEEE J. Electron Devices Soc.

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Dual-directional silicon-controlled rectifiers (DDSCRs), which provide both positive and negative electrostatic discharge (ESD) surge paths, are ESD protection devices with an excellent area efficiency. However, DDSCRs have a low holding voltage for use in 5 V-class applications, with a relatively high on-state resistance because of the elongated ESD surge path compared to unidirectional SCRs. In this paper, we propose a novel DDSCR with a higher holding voltage and a better ESD tolerance than conventional low-triggering DDSCRs (LTDDSCRs), realized by operating two additional parasitic bipolar transistors. The proposed ESD protection device was developed through a 0.18-μm CMOS process, and a timeline pulse system was used to verify its properties. The measurement results show that the proposed ESD protection device exhibits an improved tolerance and a high holding voltage and is expected to be reliable in 5 V-class applications INDEX TERMS SCR, DDSCR, ESD protection device, high holding voltage, low dynamic resistance, on-resistance, current driving capability.

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Section: Tablementioning

confidence: 99%

A New Dual-Direction SCR With High Holding Voltage and Low Dynamic Resistance for 5 V Application

Lee

Koo

2019

IEEE J. Electron Devices Soc.

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“…Thermal reliability is very important because it affects the latch-up immunity and electrical properties of the device. In the thermal reliability experiment, the hot chuck controller heats the wafer and the TLP system is used to monitor changes in the electrical properties [19]. Carrier mobility at high temperatures reduces the holding current by increasing the resistance of the well and substrate.…”

Section: Introductionmentioning

confidence: 99%

A Novel Low Dynamic Resistance Dual-Directional SCR with High Holding Voltage for 12 V Applications

Koo

2020

IEEE J. Electron Devices Soc.

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The excellent area efficiency of dual-directional SCRs (DDSCRs) have made them desirable for low-voltage and high-voltage applications. However, to implement the required symmetrical structure, conventional DDSCRs have to lengthen their ESD discharge path. In addition, the low holding voltage of existing DDSCRs is not suitable for high-voltage applications. In this study, a novel DDSCR with a high holding voltage and low dynamic resistance is proposed and its electrical characteristics are verified. The proposed DDSCR has two additional internal parasitic bipolar transistors compared to a conventional lowtriggering voltage DDSCR (LTDDSCR). Self-gate biasing reduces latch-mode feedback between the parasitic bipolar transistors in the SCR. The device is fabricated using 0.13 um BCD processes and implements a segment layout resulting in a very low dynamic resistance of 2.2 Ω and excellent holding voltages of up to 17.2 V. The proposed DDSCR demonstrates improved reliability and area efficiency for 12 V applications.

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“…Of course, low turn-on voltage, reasonable holding voltage and low leakage current are required. A low capacitance, about 94fF at zero bias, is obtained in [5]. However, the triggering voltage (V t1 ) of 8.1V is still high for many low voltage RFICs.…”

Section: Introductionmentioning

confidence: 99%

“…In addition, a complete full-chip ESD protection scheme often requires multiple ESD protection structures for each pin to protect against ESD surges of different modes, i.e., positive and negative ESD pulses from I/O to VSS (PS & NS modes), positive and negative ESD transients from I/O to VDD (PD & ND models), as well as ESD surge from VDD to VSS (DS model). So there should require multiple ESD protection cell reported in [5], and this will significantly increase parasitic parameter and consumption of silicon area, which are intolerable to advanced RFICs.…”

Section: Introductionmentioning

confidence: 99%

A Low-Capacitance and Fast-Response Bidirectional SCR for RFICs ESD Protection Applications

Sun¹,

Li²,

Li³

2017

dtetr

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For the radio frequency integrated circuits (RFICs) electrostatic discharge (ESD) protection special applications, a novel low-capacitance and fast-response bidirectional silicon controlled rectifier (LFBSCR) is developed. The low capacitance is achieved by changing the series-parallel relationship of parasitic capacitances located in the electrostatic discharge path. Moreover, the fast-response-time (T on ) and the low triggering voltage (V t1 ) parameters are obtained due to gate-assistant triggering mechanism. The experimented results show excellences of the LFBSCR in ESD protection critical performance: low parasitic capacitance C ESD~1 00fF, fast effective response Ton~100ps, low triggering voltage V t1~4 .06V, and low leakage current I leak~0 .016nA. With aforementioned excellences, a high robustness, and a small ESD design windows, the proposed LFBSCR is very suitable for RFICs ESD protection applications.

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High-Robustness and Low-Capacitance Silicon-Controlled Rectifier for High-Speed I/O ESD Protection

Cited by 41 publications

References 7 publications

A New Dual-Direction SCR With High Holding Voltage and Low Dynamic Resistance for 5 V Application

A New Dual-Direction SCR With High Holding Voltage and Low Dynamic Resistance for 5 V Application

A Novel Low Dynamic Resistance Dual-Directional SCR with High Holding Voltage for 12 V Applications

A Low-Capacitance and Fast-Response Bidirectional SCR for RFICs ESD Protection Applications

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