High-responsivity sub-bandgap hot-hole plasmonic Schottky detectors

Alavirad, Mohammad; Olivieri, Anthony; Roy, Langis; Berini, Pierre

doi:10.1364/oe.24.022544

Cited by 64 publications

(49 citation statements)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The intercept with the abscissa yields the cut-off photon energy, ∼0.765 eV, corresponding to a cut-off wavelength of λ 0 ∼ 1620 nm. Responsivities up to 1 mA/W were reported with this detector scheme, below what can be obtained using a grating detector on p-Si [21], due to the limited coupling efficiency of the fibre coupling scheme in this configuration and the higher barrier height of a Au contact to n-Si (compared to p-Si). Figure 9.5c shows a measured photocurrent map of a Au on p-Si detector, generated by scanning a tapered PM-SMF over the end facet (following Fig.…”

Section: Waveguide Detectorsmentioning

confidence: 68%

“…Corrugated metal surfaces on a metal-semiconductor (Schottky) structure have been investigated, with compelling performance characteristics being reported [19][20][21]. A corrugated detector combines a semiconductor structure with a corrugated metal grating designed to couple incoming optical waves to SPPs that propagate along the detection region.…”

Section: Grating Detectorsmentioning

confidence: 99%

“…Two such structures, operating on the basis of IPE, are shown in Figs. 9.2 and 9.3 [19,21]. Such structures have been used to increase the absorptance in the metal contact of Schottky detectors based on IPE (for sub-bandgap detection) leading to increased responsivity.…”

Section: Grating Detectorsmentioning

confidence: 99%

“…9.2), relative to the same structure without the grating [19]. Figure 9.3a shows a cross-sectional sketch of a Au/p-Si SPP photodetector [21]. The structure comprises a Au patch of thickness t on p-Si, with a Au grating consisting of rectangular ridges of width W and thickness H arranged periodically in pitch Λ.…”

Section: Grating Detectorsmentioning

confidence: 99%

See 3 more Smart Citations

Surface Plasmon Enhanced Schottky Detectors

Berini

2016

Springer Series in Solid-State Sciences

Self Cite

View full text Add to dashboard Cite

Surface plasmon Schottky detectors combine a structured metal contact that supports surface plasmons with a semiconductor, forming a rectifying metal-semiconductor junction. Internal photoemission occurs in such junctions via the excitation of hot carriers in the metal due to the absorption of surface plasmons therein, leading to photocurrent collected in the semiconductor. The cut-off wavelength of such detectors is determined by the Schottky barrier height, enabling detection below the bandgap of the semiconductor. The metal contact can be structured as a waveguide, grating or antenna on which surface plasmons are supported. Surface plasmon sub-wavelength confinement and field enhancement lead to significant enhancement of the internal photoelectric effect. The operating principles behind surface plasmon detectors based on internal photoemission are reviewed, the literature on the topic is surveyed, and avenues that appear promising are highlighted. IntroductionA surface plasmon-polariton (SPP) is a transverse-magnetic surface wave that propagates along the interface between a metal and a dielectric at optical wavelengths, as a coupled excitation formed from electromagnetic fields coupled to a charge density wave [1]. SPPs are supported on a variety of metal-dielectric structures, including planar arrangements of dielectric and metal films [2], metal gratings [3], and metal nanoparticles such as spheres, islands, rods [4,5], or nanostructured resonators (antennas) [6]. SPPs are also involved in optical transmission through one or many sub-wavelength holes in a metal film [7]. SPPs have interesting and useful attributes such as sub-wavelength confinement, energy

show abstract

Section: Waveguide Detectorsmentioning

confidence: 68%

Section: Grating Detectorsmentioning

confidence: 99%

Section: Grating Detectorsmentioning

confidence: 99%

Section: Grating Detectorsmentioning

confidence: 99%

See 2 more Smart Citations

Surface Plasmon Enhanced Schottky Detectors

Berini

2016

Springer Series in Solid-State Sciences

Self Cite

View full text Add to dashboard Cite

show abstract

“…14,15 On the other hand, SPPs also provide interesting electronic features such as light detection and electrical signal guiding. [16][17][18][19][20] These combinations of optical and electrical capabilities are inherent in the case of plasmons because the metal-dielectric interface is used.…”

mentioning

confidence: 99%

Integrated on-chip silicon plasmonic four quadrant detector for near infrared light

Grajower

Desiatov

Mazurski

et al. 2018

Applied Physics Letters

View full text Add to dashboard Cite

The ability to accurately track light beams in a given space is highly desired for myriad applications e.g., laser cutting, welding, interferometry, sensing, optical tweezers, free space optical communications, and more. Typically, achieving this goal in the short wave infrared requires the use of a cumbersome and expensive InGaAs photodetector implemented as a four quadrant (4Q) device. In this paper, we experimentally demonstrate an attractive approach by implementing a cost effective novel silicon based plasmonic 4Q photodetector. Our 4Q photodetector is implemented using a CMOS compatible plasmonic enhanced IPE Schottky photodetector and can operate in the short wave infrared band, where conventional silicon photodetectors cannot detect light. We have demonstrated the operation of the device and were able to accurately track optical beams of various beam waists at telecom wavelengths. The demonstrated device is based on standard materials and fabrication techniques which are common in the CMOS industry. As such, it provides an additional important example for the potential of plasmonics in the realization of chip scale novel devices which can be integrated with multiple other functionalities. Published by AIP Publishing.

show abstract

Plasmonic Nanoneedle Arrays with Enhanced Hot Electron Photodetection for Near‐IR Imaging

Zhang

Huang

et al. 2023

Adv Funct Materials

View full text Add to dashboard Cite

Hot electron photodetection based on metallic nanostructures is attracting significant attention due to its potential to overcome the limitation of the traditional semiconductor bandgap. To enable efficient hot electron photodetection for practical applications, it is necessary to achieve broadband and perfect light absorption within extremely thin plasmonic nanostructures using cost‐effective fabrication techniques. In this study, an ultrahigh optical absorption (up to 97.3% in average across the spectral range of 1200−2400 nm) is demonstrated in the ultrathin plasmonic nanoneedle arrays (NNs) with thickness of 10 nm, based on an all‐wet metal‐assisted chemical etching process. The efficient hot electron generation, transport, and injection at the nanoscale apex of the nanoneedles facilitate the photodetector to achieve a record low noise equivalent power (NEP) of 4.4 × 10−12 W Hz−0.5 at the wavelength of 1300 nm. The hot‐electron generation and injection process are elucidated through a transport model based on a Monte Carlo approach, which quantitatively matches the experimental data. The photodetector is further integrated into a light imaging system, as a demonstration of the exceptional imaging capabilities at the near‐IR regime. The study presents a lithography‐free, scalable, and cost‐effective approach to enhance hot electron photodetection, with promising prospects for future imaging systems.

show abstract

High-responsivity sub-bandgap hot-hole plasmonic Schottky detectors

Cited by 64 publications

References 33 publications

Surface Plasmon Enhanced Schottky Detectors

Surface Plasmon Enhanced Schottky Detectors

Integrated on-chip silicon plasmonic four quadrant detector for near infrared light

Plasmonic Nanoneedle Arrays with Enhanced Hot Electron Photodetection for Near‐IR Imaging

Contact Info

Product

Resources

About